Manufacturing diamond electronic devices

Claim 1

A process for manufacturing a unipolar semiconductor device characterized in that it includes the steps of: providing a p-type diamond substrate which is transparent to ultraviolet light; depositing a layer of insulating material on the surface of the substrate; depositing a layer of a first metal over the layer of insulating material; selectively removing the deposited layers to define a gate region of the unipolar semiconductor device; forming source and drain regions of the unipolar semiconductor device adjacent to the gate area; depositing a layer of positive photoresist material over the source, gate and drain regions; exposing the layer of photoresist material to ultraviolet light which is passed thorugh the substrate; removing the exposed photoresist material, so that a layer of photoresist material remains above the gate region; depositing a layer of a second metal over the source, gate and drain regions; and selectively removing the layer of photoresist material and hence the layer of the second metal above the gate region, a MISFET structure thereby being obtained which has source and drain contacts of the second metal and a gate contact of the first metal.