Self-alignment process for thin film diode array fabrication

Claim 1

In a process for the fabrication of an array which includes a plurality of micron-scale solid state circuit elements operatively disposed in a preselected pattern on the first surface of a large area substrate, said elements including a body of thin film semiconductor alloy material sandwiched between substantially aligned electrodes, the improved method including the steps of: providing a substrate capable of transmitting a level of radiation sufficient to activate a superposed radiation sensitive film; forming the elements such that the opacity thereof prevents the transmission of a level of radiation capable of activating a superposed radiation sensitive film; depositing a thin insulating film over the elements and interstitial first surface of the substrate; depositing a radiation sensitive film over the thin insulating film; irradiating the surface of the large area substrate opposite the first surface; developing and processing the activated radiation sensitive film so as to expose a portion of the insulating film overlying the elements; and etching the exposed insulating film so as to expose a portion of the electrode overlying the elements, whereby an electrical contact to said overlying electrode may be established without the necessity of masking.