EP0071244A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Thin-film transistor and method of manufacture therefor
Assignee: Toshiba Corp
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Filing: 1982-07-27
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Granted: —
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Expires: 2002-07-27
Abstract
Abstract A method for manufacturing thin-film transistor (74) comprises steps of sequentially forming in laminar state a gate film (42), an insulating film (44) and a conductive film having a transparent electrode film (60) and an amorphous silicon film (62) added with an impurity thereto on the top surface of glass substrate or layer (40); irradiating ultraviolet ray (50) from the bottom surface side of the substrate (40) to expose negative photoresist film (64) on said conductive film (60, 62) and to etch the same; and forming an amorphous semiconductive film (72) on the structure. In this manner, source and drain electrodes (68, 70) are respectively self-aligned with the gate electrode (42) and contacted therewith through a semiconductive film (72) and a low resistive and semiconductive film (62a).
Inventors
- 👤 Kouji Suzuki
- 👤 Mitsushi Ikeda
- 👤 Toshio Aoki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-27 07:13
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0316; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6732; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10D30/6746; H10D30/675; Y; Y10; Y10S; Y10S148/00; Y10S148/106; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/949
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
209 words
A method for manufacturing a thin-film transistor (56, 74) on an electrically insulative substrate (40) permitting the transmission of radiation (50), in which said substrate (40) is exposed by irradiating said radiation (50) through said substrate (40), characterized in that said method comprises steps of forming a first film (42) having a predetermined profile, preventing the transmission of said radiation and being electrically conductive on the first surface of said substrate (40); sequentially forming in laminar state electrically insulative second film (44) and electrically conductive third film (46, 60, 62, 80) permitting the transmission of said radiation (50) on the first surface of said substrate (40) and-said first film (42); irradiating said radiation (50) from the second surface side confronting the first surface of said substrate (40) to expose negative photoresist film (48, 64) provided on said third film (46, 60, 62, 80) with said first film (42) as a mask, to then etch the same, and to form electrically conductive film pattern (46a, 60a, 62a, 80a) having an opening (53, 66, 82) of the shape substantially equal to the profile of said first film (42); and forming a semiconductive fourth film (54, 72, 88) on a predetermined region having said opening (53, 66, 82) on said structure (40).
Claim 2
Independent Claim
209 words
A method for manufacturing a thin-film transistor (56, 74) on an electrically insulative substrate (40) permitting the transmission of radiation (50), in which said substrate (40) is exposed by irradiating said radiation (50) through said substrate (40), characterized in that said method comprises steps of forming a first film (42) having a predetermined profile, preventing the transmission of said radiation and being electrically conductive on the first surface of said substrate (40); sequentially forming in laminar state electrically insulative second film (44) and electrically conductive third film (46, 60, 62, 80) permitting the transmission of said radiation (50) on the first surface of said substrate (40) and-said first film (42); irradiating said radiation (50) from the second surface side confronting the first surface of said substrate (40) to expose negative photoresist film (48, 64) provided on said third film (46, 60, 62, 80) with said first film (42) as a mask, to then etch the same, and to form electrically conductive film pattern (46a, 60a, 62a, 80a) having an opening (53, 66, 82) of the shape substantially equal to the profile of said first film (42); and forming a semiconductive fourth film (54, 72, 88) on a predetermined region having said opening (53, 66, 82) on said structure (40).
Claim 3
Dependent Claim
43 words
The method according to claim 1, characterized in that said step of forming said second film and third film in laminar state comprises steps of forming said third film (46, 60, 62, 80) being electrically conductive and transparent on said second film (44).
Claim 4
Dependent Claim
50 words
The method according to claim 2, characterized in that said negative photoresist film (48, 64) is exposed by said radiation such as ultraviolet ray (50) incident from the second surface of said substrate (40) through said substrate (40), said second film (44) and said third film (46, 60, 62, 80).
Claim 5
Dependent Claim
87 words
The method according to claim 1, characterized in that said step of forming said second film (44) and third film (60, 62) in laminar state comprises step of forming said third film (60, 62) including steps of forming a fifth film (60) being electrically conductive and transparent on said second film (44); and forming a sixth film (62) being semiconductive, having a suitable thickness set to the degree of permitting the transmission of said radiation (50) and added with an impurity thereto on said fifth film (60).
Claim 6
Dependent Claim
73 words
The method according to claim 4, characterized in that said step of forming said electrically conductive film pattern comprises steps of exposing said negative photoresist film (64) formed on said sixth film (62) with radiation such as ultraviolet ray (50) with said first film (42) as a mask to form a negative photoresist pattern (64a); and etching said fifth film (60) and said sixth film (62). by using said negative photoresist pattern (64).
Claim 7
Dependent Claim
33 words
The method according to claim 5, characterized in that said sixth film (62a) thus etched is sandwiched at least at a part thereof between said fourth film (72) and said fifth film (60a).
Claim 8
Dependent Claim
31 words
The method according to claim 6, characterized in that said sixth film (62) is made of a material selected from the group consisting of polycrystalline semiconductor material and amorphous semiconductor material.
Claim 9
Dependent Claim
30 words
. The method according to claim 6, characterized in that said sixth film (62) is made of amorphous semiconductor material and is formed to have approx. 30 to 1,000 A.
Claim 10
Dependent Claim
56 words
The method according to claim 5, characterized in that said negative photoresist film (64) is exposed with said radiation such as ultraviolet ray (50) incident from the second surface side of said substrate (40) through said substrate (40), said second film (44) and said third film including said fifth film (60) and said sixth film (62).
Claim 11
Dependent Claim
60 words
The method according to claim 1, characterized in that said step of forming said second film (44) and third film (80) in laminar state comprises step of forming said third film (80) being semiconductive, having a suitable thickness set to the degree permitting the transmission of said radiation (50) and added with an impurity thereto on said second film (44).
Claim 12
Dependent Claim
46 words
The method according to claim 10, characterized by further comprising step of forming electrically conductive films (84, 86) on said electrically conductive film pattern (80a) made of said semiconductive third film (80), said electrically conductive films (84, 86) serving as auxiliary electrodes for said thin-film transistor.
Claim 13
Dependent Claim
189 words
A thin-film transistor formed on an electrically insulative _substrate (40) permitting the transmission of radiation (50), in which said substrate (40) is exposed by irradiating said radiation (50) through said substrate (40), characterized in that said thin-film transistor (56, 74) comprises first electrode thin-film having a predetermined profile formed on said substrate (40) and preventing the transmission of said radiation (50); electrically conductive second and third electrode thin-films (58, 59, 68, 70, 80a) formed adjacent to one another, electrically isolated from said first electrode thin-film (42), provided over said substrate (40) and permitting the transmission of said radiation (50), said second and third electrode thin-films (58, 59, 68, 70, 80a) having opening (53, 66, 82) of the shape substantially equal to the profile of said first electrode thin-film (42) therebetween over said first electrode thin-film (42); and a semiconductive thin-film (54, 72, 88) electrically isolated from said first electrode thin-film (42), provided above said substrate (40), burying said opening (53, 66, 82) and extending to overlie the final edge part approaching to said opening (53, 66, 82) of said second and third electrode thin-films (58, 59, 68, 70, 80a).
Claim 14
Dependent Claim
189 words
A thin-film transistor formed on an electrically insulative _substrate (40) permitting the transmission of radiation (50), in which said substrate (40) is exposed by irradiating said radiation (50) through said substrate (40), characterized in that said thin-film transistor (56, 74) comprises first electrode thin-film having a predetermined profile formed on said substrate (40) and preventing the transmission of said radiation (50); electrically conductive second and third electrode thin-films (58, 59, 68, 70, 80a) formed adjacent to one another, electrically isolated from said first electrode thin-film (42), provided over said substrate (40) and permitting the transmission of said radiation (50), said second and third electrode thin-films (58, 59, 68, 70, 80a) having opening (53, 66, 82) of the shape substantially equal to the profile of said first electrode thin-film (42) therebetween over said first electrode thin-film (42); and a semiconductive thin-film (54, 72, 88) electrically isolated from said first electrode thin-film (42), provided above said substrate (40), burying said opening (53, 66, 82) and extending to overlie the final edge part approaching to said opening (53, 66, 82) of said second and third electrode thin-films (58, 59, 68, 70, 80a).
Claim 15
Dependent Claim
39 words
A thin-film transistor according to claim 12, chcracterized in that each of said second and third electrode thin-films (58, 59, 68, 70) comprises a transparent thin-film (46a, 60a) permitting the transmission of said radiation such as ultraviolet ray (50).
Claim 16
Dependent Claim
41 words
A thin-film transistor according to claim 13, characterized in that each of said second and third electrode thin-films (68, 70) further comprises a semiconductive thin-film (62a) provided on said transparent thin-film (60a) and added with a predetermined amount of impurity thereto.
Claim 17
Dependent Claim
51 words
A thin-film transistor according to claim 12, characterized in that each of said second and third electrode thin-films comprises a semiconductive thin-film (80a) having a suitable thickness set to the degree permitting the transmission of said radiation such as ultraviolet ray (50) and added with a predetermined amount of impurity thereto.
Claim 18
Dependent Claim
41 words
A thin-film transistor according to claim 15, characterized by further comprising electrically conductive films (84, 86) for serving as auxiliary electrodes of said second and third electrodes respectively provided on said semiconductive thin-films (80a) of said second and third electrode thin-films.
Claim 19
Dependent Claim
37 words
A thin-film transistor according to any one of claims 14 or 15, characterized in that said semiconductor thin-film (80a) is made of a material selected from the group consisting of polycrystalline semiconductor material and amorphous semiconductor material.
References Cited (Backward Citations)
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