Patent US5087322A successfully refreshed from Google Patents.
US5087322A
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Selective metallization for high temperature semiconductors
Assignee: Cornell Research Foundation Inc
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Filing: 1990-10-24
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Granted: 1992-02-11
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Expires: 2010-10-24
Abstract
Abstract A method of selective metallization of high temperature semiconductors to produce ohmic or rectifying contacts includes modification of the surface of a high temperature semiconductor material and thereafter depositng metal thereon by chemical vapor deposition. The method includes a lithographic step to define the area on the semiconductor surface where the CVD material is to be deposited. Thereafter, a beam of refractory metal ions is directed onto the defined area to damage the semiconductor material surface so that it will react with CVD gases. The contact metal is then deposited on the damaged surface by chemical vapor deposition, so that the metal seeds on the damaged exposed surface of the semiconductor to permit direct formation of metallization on that surface.
Inventors
- 👤 David Lillienfeld
- 👤 David Thomas
- 👤 Paul Smith
- 👤 Gerald Comeau
- 👤 Robert Soave
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 07:15
CPC Classifications
H; H10; H10D; H10D12/00; H10D12/01; H10D12/031; H10D62/00; H10D62/80; H10D62/83; H10D62/832; H10D62/8325; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D64/0115; H10D64/0116; H10D64/012; H10D64/0121; H10D64/0123; H10D64/0124
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
113 words
A method of forming contact metallization on high temperature semiconductor material, comprising: forming from a wide-band-gap semiconductor material a substrate having a first surface; forming a layer of masking material on said first surface; patterning said layer; removing a selected portion of said layer to expose an implant site on said first surface at the desired location of a metal contact; directing an ion beam against said exposed implant site to modify said semiconductor material; depositing by chemical vapor deposition a refractory metal on the modified semiconductor material at said implant site, said modified semiconductor material reacting with said refractory material to produce contact metallization of said first surface at said implant site.
Claim 2
Independent Claim
113 words
A method of forming contact metallization on high temperature semiconductor material, comprising: forming from a wide-band-gap semiconductor material a substrate having a first surface; forming a layer of masking material on said first surface; patterning said layer; removing a selected portion of said layer to expose an implant site on said first surface at the desired location of a metal contact; directing an ion beam against said exposed implant site to modify said semiconductor material; depositing by chemical vapor deposition a refractory metal on the modified semiconductor material at said implant site, said modified semiconductor material reacting with said refractory material to produce contact metallization of said first surface at said implant site.
Claim 3
Dependent Claim
26 words
The method of claim 1, wherein the step of forming a layer of a masking material includes depositing a lithographically definable material on said first surface.
Claim 4
Dependent Claim
69 words
The method of claim 1, wherein the step of forming a layer of a masking material includes depositing on said first surface a lithographically definable material which is stable at high temperatures, and which is capable of withstanding said chemical vapor deposition step, and wherein said step of patterning forms vertical walls in said masking material surrounding said implantation site, said walls defining vertical edges of said contact metallization.
Claim 5
Dependent Claim
53 words
The method of claim 1, wherein the step of forming a layer of a masking material includes: depositing on said first surface a first material which is stable at high temperatures, and which is capable of withstanding said chemical vapor deposition step; and depositing on said first material a lithographically definable second material.
Claim 6
Dependent Claim
27 words
The method of claim 4, wherein the step of patterning said layer includes lithographically defining in said second material the location and shape of said implant site.
Claim 7
Dependent Claim
57 words
The method of claim 5, wherein the step of removing a selected portion of said layer includes: removing the lithographically defined portions of said second material; and etching through said first material in the pattern defined by said second material to form in said first material a trench which exposes said implant site on said first surface.
Claim 8
Dependent Claim
21 words
The method of claim 6, further including removing said second material before directing an ion beam against said exposed implant site.
Claim 9
Dependent Claim
23 words
The method of claim 7, further including removing said first material from said semiconductor first surface after completion of said chemical vapor deposition.
Claim 10
Dependent Claim
43 words
The method of claim 1, wherein the step of directing an ion beam includes directing a beam of ions having an energy level sufficient to damage said semiconductor material at said first surface, whereby said first surface will react with said refractory metal.
Claim 11
Dependent Claim
40 words
The method of claim 1, wherein the step of directing an ion beam includes directing a beam of ions having an energy level sufficient to produce a buried layer of implanted ions near said first surface of said semiconductor material.
Claim 12
Dependent Claim
29 words
The method of claim 10, further including: prior to said depositing step, etching said semiconductor first surface to expose said buried layer of implanted ions in said implant site.
Claim 13
Dependent Claim
21 words
The method of claim 1, wherein the step of directing an ion beam includes directing a beam of refractory metal ions.
Claim 14
Dependent Claim
34 words
The method of claim 1, wherein the step of directing an ion beam includes directing a beam of ions selected from the group B, Si, Ge and W for a substrate material of BN.
Claim 15
Dependent Claim
31 words
The method of claim 1, wherein said semiconductor material substrate is formed from a wide-band-gap material selected from the group which includes SiC, Si 3 N 4 , BN and diamond.
Claim 16
Dependent Claim
69 words
The method of claim 14, wherein the step of directing an ion beam includes directing a beam of ions selected from the group which includes Si, Ge and W for substrate materials selected from the group which includes SiC, Si 3 N 4 and Diamond, and includes directing a beam of ions selected from the group which includes B, Si, Ge, and W for a substrate material of BN.
Claim 17
Dependent Claim
33 words
The method of claim 15, wherein the step of directing an ion beam includes directing a beam of ions having an energy level sufficient to damage said semiconductor material at said first surface.
Claim 18
Dependent Claim
40 words
The method of claim 15, wherein the step of directing an ion beam includes directing a beam of ions having an energy level sufficient to produce a buried layer of implanted ions near said first surface of said semiconductor material.
Claim 19
Dependent Claim
29 words
The method of claim 17, further including, prior to said depositing step, etching said semiconductor first surface to expose said buried layer of implanted ions in said implant site.
Claim 20
Dependent Claim
28 words
The method of claim 1, wherein in the step of chemical vapor deposition includes depositing contact material which seeds on said modified semiconductor material at said implant site.
Claim 21
Dependent Claim
21 words
The method of claim 1, wherein the steps of patterning and removing expose multiple implant sites on said semiconductor first surface.
Claim 22
Dependent Claim
95 words
The method of claim 20, wherein the steps of patterning and removing expose source and drain implant sites, and wherein the method further includes: implanting p+ regions in said semiconductor material at said source and drain implant sites; annealing said semiconductor material to activate dopants in said source and drain implant sites; patterning and removing a selected portion of said layer to expose a gate implant site; and thereafter directing said ion beam against said exposed source, gate and drain sites to modify said semiconductor material and to prepare it for said chemical vapor deposition.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1995-02-10 | 1995-08-12 | 1996-02-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-02-10 | 1999-08-12 | 2000-02-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-02-10 | 2003-08-12 | 2004-02-11 | $7700.00 | Window Closed / Lapsed |