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US5064686A
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Sub-valent molybdenum, tungsten, and chromium amides as sources for thermal chemical vapor deposition of metal-containing films
Assignee: Olin Corp
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Filing: 1990-10-29
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Granted: 1991-11-12
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Expires: 2010-10-29
Abstract
Abstract A thermal CVD process for forming a selected refractory metal-containing film onto a substrate comprising the steps of: (a) introducing a subvalent refractory metal amide as a reactant gas capable of forming said metal-containing film into a CVD reaction zone containing said substrate on which said metal-containing film is to be formed; said subvalent metal amide having formula (I): [M[NRR'].sub.x ].sub.y (I) wherein M is molybdenum, tungsten, or chromium; wherein R and R' are individually selected from hydrogen and lower alkyl groups having 1-4 carbon atoms, with the proviso that at least one of R or R' must be a lower alkyl group; wherein x is selected from 2, 3, 4, or 5; and wherein y is selected from 1 or 2. (b) maintaining the temperature of said zone and said substrate at about 200° C. to about 1,000° C.; (c) maintaining the pressure in said zone at about 0.001 torr to about 100 torr; and (d) passing said reacting gas or gases by said heated substrate for a period of time sufficient to form said metal-containing film thereon.
Inventors
- 👤 Michael J. McGeary
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 15:45
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/32; C23C16/06; C23C16/18
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
179 words
A thermal CVD process for forming a selected refractory metal-containing film onto a substrate comprising the steps of: (a) introducing a subvalent refractory metal amide as a reactant gas capable of forming said metal-containing film into a CVD reaction zone containing said substrate on which said metal-containing film is to be formed; said subvalent metal amide having formula (I): [M[NRR'].sub.x ].sub.y (I) wherein M is molybdenum, tungsten, or chromium; wherein R and R' are individually selected from hydrogen and lower alkyl groups having 1-4 carbon atoms, with the proviso that at least one of R or R' must be a lower alkyl group; wherein x is selected from 2, 3, 4, or 5; and wherein y is selected from 1 or 2. (b) maintaining the temperature of said zone and said substrate at about 200° C. to about 1,000° C.; (c) maintaining the pressure in said zone at about 0.001 torr to about 100 torr; and (d) passing said reacting gas or gases by said heated substrate for a period of time sufficient to form said metal-containing film thereon.
Claim 2
Dependent Claim
179 words
A thermal CVD process for forming a selected refractory metal-containing film onto a substrate comprising the steps of: (a) introducing a subvalent refractory metal amide as a reactant gas capable of forming said metal-containing film into a CVD reaction zone containing said substrate on which said metal-containing film is to be formed; said subvalent metal amide having formula (I): [M[NRR'].sub.x ].sub.y (I) wherein M is molybdenum, tungsten, or chromium; wherein R and R' are individually selected from hydrogen and lower alkyl groups having 1-4 carbon atoms, with the proviso that at least one of R or R' must be a lower alkyl group; wherein x is selected from 2, 3, 4, or 5; and wherein y is selected from 1 or 2. (b) maintaining the temperature of said zone and said substrate at about 200° C. to about 1,000° C.; (c) maintaining the pressure in said zone at about 0.001 torr to about 100 torr; and (d) passing said reacting gas or gases by said heated substrate for a period of time sufficient to form said metal-containing film thereon.
Claim 3
Dependent Claim
12 words
The thermal CVD process of claim 1 wherein said M is tungsten.
Claim 4
Dependent Claim
11 words
The thermal CVD process of claim 1 wherein M is molybdenum.
Claim 5
Dependent Claim
19 words
The thermal CVD process of claim 1 wherein R and R' are both either hydrogen, methyl or ethyl groups.
Claim 6
Dependent Claim
13 words
The thermal CVD process of claim 4 wherein x is 3 or 4.
Claim 7
Dependent Claim
20 words
The thermal CVD process of claim 5 wherein said subvalent metal amide is Mo[N(CH 3 ) 2 ] 4 .
Claim 8
Dependent Claim
22 words
The thermal CVD process of claim 5 wherein said subvalent metal amide is [W[N(CH 3 ) 2 ] 3 ] 2 .
Claim 9
Dependent Claim
25 words
The thermal CVD process of claim 1 wherein said temperature of said zone and said substrate is from about 250° C. to about 500° C.
Claim 10
Dependent Claim
22 words
The thermal CVD process of claim 1 wherein said pressure of said zone is from about 0.01 torr to about 10 torr.
Claim 11
Dependent Claim
38 words
The thermal CVD process of claim 1 wherein said substrate is selected from the group consisting of silicon wafers, plastic objects or films, resin objects or films, metal objects or films, GaAs, or any semiconductor layer or device.
Claim 12
Dependent Claim
180 words
A thermal CVD process for forming a selected refractory metal-containing film onto a substrate, comprising the steps: (a) introducing a subvalent refractory metal amide as a reactant gas capable of being thermally converted into said metal-containing film into a CVD reaction zone containing said substrate on which said metal-containing film is to be formed; said subvalent metal amide having formula (I): [M[NRR'].sub.x ].sub.y (I) wherein M is molybdenum, tungsten, or chromium; wherein R and R' are individually selected from hydrogen and lower alkyl groups having 1-4 carbon atoms, with the proviso that at least one of R or R' must be a lower alkyl group; wherein x is selected from 2, 3, 4, or 5; and wherein y is selected from 1 or 2. (b) maintaining the temperature of said zone and said substrate at about 250° C. to about 500° C.; (c) maintaining the pressure in said zone at about 0.01 torr to about 10 torr; and (d) passing said metal amide gas by said heated substrate for a period of time sufficient to form said metal-containing film thereon.
Claim 13
Dependent Claim
180 words
A thermal CVD process for forming a selected refractory metal-containing film onto a substrate, comprising the steps: (a) introducing a subvalent refractory metal amide as a reactant gas capable of being thermally converted into said metal-containing film into a CVD reaction zone containing said substrate on which said metal-containing film is to be formed; said subvalent metal amide having formula (I): [M[NRR'].sub.x ].sub.y (I) wherein M is molybdenum, tungsten, or chromium; wherein R and R' are individually selected from hydrogen and lower alkyl groups having 1-4 carbon atoms, with the proviso that at least one of R or R' must be a lower alkyl group; wherein x is selected from 2, 3, 4, or 5; and wherein y is selected from 1 or 2. (b) maintaining the temperature of said zone and said substrate at about 250° C. to about 500° C.; (c) maintaining the pressure in said zone at about 0.01 torr to about 10 torr; and (d) passing said metal amide gas by said heated substrate for a period of time sufficient to form said metal-containing film thereon.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-11-11 | 1995-05-13 | 1995-11-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-11-11 | 1999-05-13 | 1999-11-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-11-11 | 2003-05-13 | 2003-11-12 | $7700.00 | Window Closed / Lapsed |