US5045916A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Extended silicide and external contact technology
Assignee: National Semiconductor Corp
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Filing: 1989-07-19
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Granted: 1991-09-03
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Expires: 2009-07-19
Abstract
Abstract There is disclosed a process for making high performance bipolar and high performance MOS devices on the same integrated circuit die. The process comprises forming isoaltion islands of epitaxial silicon surrounded by field oxide and forming MOS transistors having polysilicon gates in some islands and forming bipolar transistors having polysilicon emitters in other islands. Insulating spacers are then formed around the edges of the polysilicon electrodes by anisotropically etching a layer of insulation material, usually thermally grown silicon dioxide covered with additional oxide deposited by CVD. A layer of refractory metal, preferably titanium covered with tungsten, is then deposited and heat treated at a temperature high enough to form only titanium disilicide to form silicide over the tops of the polysilicon electrodes and on top of the bases, sources and drains. Regions of this refractory metal are then masked off such that the electrical contact with the silicide is preserved and so that the refractory metal extends to a contact pad position external to the isolation island. Metal posts can be formed at the contact pad positions and a layer of planarized insulation material is formed so to leave only the tops of the posts exposed. A layer of metal can then be deposited and etched to make electrical contact with tops of the posts.
Inventors
- 👤 Madhukar B. Vor
- 👤 Gregory N. Burton
- 👤 Ashok K. Kapoor
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 18:06
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/063; H10B; H10B10/00; H10B10/12; H10B12/00; H10B12/30; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10D84/00; H10D84/01; H10D84/0107; H10D84/0109; H10D84/02; H10D84/03; H10D84/038; H10W20/056; H10W20/064; H10W20/066; H10W20/0698; H10W20/40; H10W20/41; H10W20/43; H10W20/44; H10W20/4451; Y; Y10; Y10S; Y10S257/00; Y10S257/903
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
117 words
A field effect transistor comprising: a semiconductor substrate having a surface; an insulating region extending into the substrate from the surface to surround a first region of the substrate; a gate electrode disposed above the substrate to divide the first region of the substrate into a source, a drain, and a channel; and an electrically separate source electrode and a drain electrode in electrical contact with the source and drain, respectively, and extending into the insulating region, each of the source and drain electrodes consisting of a layer of metal silicide where in contact with the substrate and a metal where in contact with the insulating region, the metal and the metal silicide being a contiguous layer.
Claim 2
Dependent Claim
117 words
A field effect transistor comprising: a semiconductor substrate having a surface; an insulating region extending into the substrate from the surface to surround a first region of the substrate; a gate electrode disposed above the substrate to divide the first region of the substrate into a source, a drain, and a channel; and an electrically separate source electrode and a drain electrode in electrical contact with the source and drain, respectively, and extending into the insulating region, each of the source and drain electrodes consisting of a layer of metal silicide where in contact with the substrate and a metal where in contact with the insulating region, the metal and the metal silicide being a contiguous layer.
Claim 3
Dependent Claim
37 words
A transistor as in claim 1 wherein: the gate electrode has sides; and a spacer insulating region is disposed on the sides of the gate electrode, the source and drain electrodes extending to the spacer insulating region.
Claim 4
Dependent Claim
23 words
A transistor as in claim 2 wherein the gate electrode is disposed on a gate insulating layer which is formed on the substrate.
Claim 5
Dependent Claim
24 words
A transistor as in claim 3 wherein the source and drain comprise first conductivity type silicon and the channel comprises opposite conductivity type silicon.
Claim 6
Dependent Claim
44 words
A transistor as in claim 1 further comprising: an insulating layer disposed over the metal on the insulating region; an opening in the insulating layer to expose the metal thereunder; and an ohmic connection to the metal through the opening in the insulating layer.
Claim 7
Dependent Claim
59 words
A transistor as in claim 5 wherein: the gate electrode comprises a region of polycrystalline silicon having sides and a top; insulating material is disposed on the sides of the gate electrode but not on the top; and the metal silicide on the source and drain extend to contact the insulating material on the sides of the gate electrode.
Claim 8
Dependent Claim
17 words
A transistor as in claim 6 further comprising a layer of metal silicide on the gate electrode.
Claim 9
Dependent Claim
21 words
A transistor as in claim 7 wherein the metal silicide on the source and drain completely covers the source and drain.
Claim 10
Dependent Claim
132 words
A semiconductor structure comprising: a semiconductor substrate; first and second semiconductor regions in the substrate separated from each other and from the rest of the substrate by an insulating region; an electrically conductive source/drain electrode disposed on the first semiconductor region in electrical contact therewith; an electrically conductive base electrode disposed on the second semiconductor region in electrical contact therewith; a first conductive region disposed on the insulating region in electrical contact with the source/drain electrode; a second conductive region, electrically separate from the first conductive region, disposed on the insulating region in electrical contact with the base electrode; wherein each of the electrodes consist of metal silicide and each of the conductive regions consist of first metal; and a pair of ohmic connections contacting the first metal on the insulating region.
Claim 11
Dependent Claim
132 words
A semiconductor structure comprising: a semiconductor substrate; first and second semiconductor regions in the substrate separated from each other and from the rest of the substrate by an insulating region; an electrically conductive source/drain electrode disposed on the first semiconductor region in electrical contact therewith; an electrically conductive base electrode disposed on the second semiconductor region in electrical contact therewith; a first conductive region disposed on the insulating region in electrical contact with the source/drain electrode; a second conductive region, electrically separate from the first conductive region, disposed on the insulating region in electrical contact with the base electrode; wherein each of the electrodes consist of metal silicide and each of the conductive regions consist of first metal; and a pair of ohmic connections contacting the first metal on the insulating region.
Claim 12
Dependent Claim
26 words
A structure as in claim 9 wherein each of the electrodes includes sides and a top, which sides are covered with a spacer of insulating material.
Claim 13
Dependent Claim
21 words
A structure as in claim 10 wherein the metal silicide on the first and second semiconductor regions extends to the spacer.
Claim 14
Dependent Claim
20 words
A structure as in claim 11 further comprising an additional layer of metal disposed on and containing the first metal.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-09-02 | 1995-03-04 | 1995-09-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-09-02 | 1999-03-04 | 1999-09-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-09-02 | 2003-03-04 | 2003-09-03 | $7700.00 | Window Closed / Lapsed |