US4249968A
Expired / Lapsed
US
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Method of manufacturing a metal-insulator-semiconductor utilizing a multiple stage deposition of polycrystalline layers
Assignee: International Business Machines Corp
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Filing: 1978-12-29
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Granted: 1981-02-10
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Expires: 1998-12-29
Abstract
Abstract A method of making a metal-oxide-semiconductor device is disclosed. A thin silicon dioxide insulating layer is formed on the surface of a planar silicon wafer. A first layer of intrinsic polycrystalline silicon is deposited over the dioxide layer, and a second layer of doped polycrystalline silicon is deposited over the intrinsic layer, thereby forming the gate. Subsequent hot processing steps result in diffusion of a portion of the dopant from the doped polycrystalline layer into and throughout the intrinsic layer so as to dope the latter. A metal contact layer is then deposited onto the gate and in superimposed vertical alignment with respect to the thin silicon dioxide insulating layer. The instrinsic nature of the first polycrystalline layer reduces grain growth and void formation in the polycrystalline silicon and thereby prevents the silicon dioxide from being attacked by hydrofluoric acid seeping through voids in the polycrystalline layer during subsequent processing. The yield for the manufacture of devices having thin oxide gates is substantially improved.
Inventors
- 👤 James R. Gardiner
- 👤 William A. Pliskin
- 👤 Martin Revitz
- 👤 Joseph F. Shepard
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 06:46
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D30/40; H10D30/47; H10D30/471; H10D30/473; H10D30/4732; H10P; H10P76/00; H10P76/40; Y; Y10; Y10S; Y10S148/00; Y10S148/018; Y10S148/02; Y10S148/025; Y10S148/122
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
137 words
A method of making a metal-oxide-semiconductor field-effect device and comprising the steps of: providing a planar silicon body, forming a thin silicon dioxide insulating layer on a surface of said body, depositing a gate comprising a first intrinsic layer of polycrystalline silicon onto said silicon dioxide insulating layer, increasing the thickness of said gate by depositing onto said first intrinsic polycrystalline layer at least one additional polycrystalline silicon layer together with the addition of a dopant, subjecting said body to subsequent hot processing steps resulting incidentally in diffusion of a portion of the dopant from said additional polycrystalline silicon layer into and throughout said first polycrystalline silicon layer down to said silicon dioxide insulating layer, and depositing a metal contact onto said gate and in superimposed vertical alignment with respect to said thin silicon dioxide insulating layer.
Claim 2
Independent Claim
137 words
A method of making a metal-oxide-semiconductor field-effect device and comprising the steps of: providing a planar silicon body, forming a thin silicon dioxide insulating layer on a surface of said body, depositing a gate comprising a first intrinsic layer of polycrystalline silicon onto said silicon dioxide insulating layer, increasing the thickness of said gate by depositing onto said first intrinsic polycrystalline layer at least one additional polycrystalline silicon layer together with the addition of a dopant, subjecting said body to subsequent hot processing steps resulting incidentally in diffusion of a portion of the dopant from said additional polycrystalline silicon layer into and throughout said first polycrystalline silicon layer down to said silicon dioxide insulating layer, and depositing a metal contact onto said gate and in superimposed vertical alignment with respect to said thin silicon dioxide insulating layer.
Claim 3
Independent Claim
110 words
A method of making a metal-insulator-semiconductor device and comprising the steps of: providing a silicon body, forming a thin insulating layer on a surface of said body, depositing a first intrinsic layer of polycrystalline silicon onto said insulating layer, depositing onto said first intrinsic polycrystalline layer at least one additional polycrystalline silicon layer together with the addition of a dopant, heating said layers and diffusing a portion of the dopant from said additional polycrystalline silicon layer into and throughout said first polycrystalline silicon layer down to said insulating layer, and depositing a metal contact in superimposed vertical alignment with respect to said thin insulating layer and said polycrystalline silicon layers.
Claim 4
Independent Claim
110 words
A method of making a metal-insulator-semiconductor device and comprising the steps of: providing a silicon body, forming a thin insulating layer on a surface of said body, depositing a first intrinsic layer of polycrystalline silicon onto said insulating layer, depositing onto said first intrinsic polycrystalline layer at least one additional polycrystalline silicon layer together with the addition of a dopant, heating said layers and diffusing a portion of the dopant from said additional polycrystalline silicon layer into and throughout said first polycrystalline silicon layer down to said insulating layer, and depositing a metal contact in superimposed vertical alignment with respect to said thin insulating layer and said polycrystalline silicon layers.
Claim 5
Independent Claim
116 words
A method of making a metal-oxide-semiconductor field-effect device and comprising the steps of: providing a semiconductor body, forming a thin oxide insulating layer on a surface of said body, depositing a gate comprising a first intrinsic layer of polycrystalline silicon onto said oxide insulating layer, increasing the thickness of said gate by depositing onto said first intrinsic polycrystalline layer at least one additional polycrystalline silicon layer together with the addition of a dopant, heating said gate and diffusing a portion of the dopant from said additional polycrystalline silicon layer into said first polycrystalline silicon layer, and depositing a metal contact onto said gate and in superimposed vertical alignment with respect to said thin oxide insulating layer.
Claim 6
Independent Claim
116 words
A method of making a metal-oxide-semiconductor field-effect device and comprising the steps of: providing a semiconductor body, forming a thin oxide insulating layer on a surface of said body, depositing a gate comprising a first intrinsic layer of polycrystalline silicon onto said oxide insulating layer, increasing the thickness of said gate by depositing onto said first intrinsic polycrystalline layer at least one additional polycrystalline silicon layer together with the addition of a dopant, heating said gate and diffusing a portion of the dopant from said additional polycrystalline silicon layer into said first polycrystalline silicon layer, and depositing a metal contact onto said gate and in superimposed vertical alignment with respect to said thin oxide insulating layer.
Claim 7
Independent Claim
107 words
A method of making a metal-insulator-semiconductor device and comprising the steps of: providing a semiconductor body, forming a thin insulating layer on a surface of said body, depositing a first intrinsic layer of polycrystalline semiconductive material onto said insulating layer, depositing onto said first polycrystalline layer at least one additional polycrystalline semiconductive layer together with the addition of a dopant, heating said layers and diffusing a portion of the dopant from said additional polycrystalline layer into and throughout said first polycrystalline layer down to said insulating layer, and depositing a metal contact in superimposed vertical alignment with respect to said thin insulating layer and said polycrystalline layers.
Claim 8
Independent Claim
107 words
A method of making a metal-insulator-semiconductor device and comprising the steps of: providing a semiconductor body, forming a thin insulating layer on a surface of said body, depositing a first intrinsic layer of polycrystalline semiconductive material onto said insulating layer, depositing onto said first polycrystalline layer at least one additional polycrystalline semiconductive layer together with the addition of a dopant, heating said layers and diffusing a portion of the dopant from said additional polycrystalline layer into and throughout said first polycrystalline layer down to said insulating layer, and depositing a metal contact in superimposed vertical alignment with respect to said thin insulating layer and said polycrystalline layers.
Claim 9
Independent Claim
98 words
A method of making a metal-insulator-semiconductor device and comprising the steps of: providing a silicon body, forming a thin insulating layer on a surface of said body, depositing a first intrinsic layer of polycrystalline silicon onto said insulating layer, depositing onto said first polycrystalline layer at least one additional polycrystalline silicon layer together with the addition of a dopant, diffusing a portion of the dopant from said additional polycrystalline silicon layer into said first polycrystalline silicon layer, and depositing a metal contact in superimposed vertical alignment with respect to said thin insulating layer and said polycrystalline silicon layers.
Claim 10
Independent Claim
98 words
A method of making a metal-insulator-semiconductor device and comprising the steps of: providing a silicon body, forming a thin insulating layer on a surface of said body, depositing a first intrinsic layer of polycrystalline silicon onto said insulating layer, depositing onto said first polycrystalline layer at least one additional polycrystalline silicon layer together with the addition of a dopant, diffusing a portion of the dopant from said additional polycrystalline silicon layer into said first polycrystalline silicon layer, and depositing a metal contact in superimposed vertical alignment with respect to said thin insulating layer and said polycrystalline silicon layers.
Claim 11
Independent Claim
95 words
A method of making a metal-oxide-semiconductor field-effect device and comprising the steps of: providing a planar silicon body, forming a thin silicon dioxide insulating layer on a surface of said body, depositing a gate comprising a first intrinsic layer of polycrystalline silicon onto said silicon dioxide insulating layer, increasing the thickness of said gate by depositing onto said first intrinsic polycrystalline layer at least one additional polycrystalline silicon layer together with the addition of a dopant, and diffusing a portion of the dopant from said additional polycrystalline silicon layer into said first polycrystalline silicon layer.
Claim 12
Independent Claim
95 words
A method of making a metal-oxide-semiconductor field-effect device and comprising the steps of: providing a planar silicon body, forming a thin silicon dioxide insulating layer on a surface of said body, depositing a gate comprising a first intrinsic layer of polycrystalline silicon onto said silicon dioxide insulating layer, increasing the thickness of said gate by depositing onto said first intrinsic polycrystalline layer at least one additional polycrystalline silicon layer together with the addition of a dopant, and diffusing a portion of the dopant from said additional polycrystalline silicon layer into said first polycrystalline silicon layer.
Claim 13
Independent Claim
78 words
A method of making a metal-insulator-semiconductor device and comprising the steps of: providing a silicon body, forming a thin insulating layer on a surface of said body, depositing a first intrinsic layer of polycrystalline semiconductive material onto said insulating layer, depositing onto said first intrinsic polycrystalline layer at least one additional polycrystalline semiconductive layer together with the addition of a dopant, and diffusing a portion of the dopant from said additional polycrystalline layer into said first polycrystalline layer.
Claim 14
Independent Claim
78 words
A method of making a metal-insulator-semiconductor device and comprising the steps of: providing a silicon body, forming a thin insulating layer on a surface of said body, depositing a first intrinsic layer of polycrystalline semiconductive material onto said insulating layer, depositing onto said first intrinsic polycrystalline layer at least one additional polycrystalline semiconductive layer together with the addition of a dopant, and diffusing a portion of the dopant from said additional polycrystalline layer into said first polycrystalline layer.
Claim 15
Independent Claim
86 words
A method of making a metal-oxide-semiconductor field-effect device and comprising the steps of: providing a semiconductor body, forming a thin oxide insulating layer on a surface of said body, depositing a gate comprising a first intrinsic layer of polycrystalline silicon onto said oxide insulating layer, increasing the thickness of said gate by depositing onto said first intrinsic polycrystalline silicon layer together with the addition of a dopant, and diffusing a portion of the dopant from said additional polycrystalline silicon layer into said first polycrystalline silicon layer.
Claim 16
Independent Claim
86 words
A method of making a metal-oxide-semiconductor field-effect device and comprising the steps of: providing a semiconductor body, forming a thin oxide insulating layer on a surface of said body, depositing a gate comprising a first intrinsic layer of polycrystalline silicon onto said oxide insulating layer, increasing the thickness of said gate by depositing onto said first intrinsic polycrystalline silicon layer together with the addition of a dopant, and diffusing a portion of the dopant from said additional polycrystalline silicon layer into said first polycrystalline silicon layer.
Claim 17
Independent Claim
87 words
A method of making a metal-insulator-semiconductor device and comprising the steps of: providing a semiconductor body, forming an insulating layer on a surface of said body, depositing a first intrinsic layer of polycrystalline semiconductive material onto said insulating layer, depositing onto said first polycrystalline layer at least one additional polycrystalline semiconductive layer together with the addition of a dopant, and heating said layers and diffusing a portion of the dopant from said additional polycrystalline layer into and throughout said first polycrystalline layer down to said insulating layer.
Claim 18
Independent Claim
87 words
A method of making a metal-insulator-semiconductor device and comprising the steps of: providing a semiconductor body, forming an insulating layer on a surface of said body, depositing a first intrinsic layer of polycrystalline semiconductive material onto said insulating layer, depositing onto said first polycrystalline layer at least one additional polycrystalline semiconductive layer together with the addition of a dopant, and heating said layers and diffusing a portion of the dopant from said additional polycrystalline layer into and throughout said first polycrystalline layer down to said insulating layer.
Claim 19
Independent Claim
88 words
A method of making a metal-insulator semiconductor device and comprising the steps of: providing a body, forming an insulating layer on said body, depositing a first intrinsic layer of silicon onto said insulating layer, depositing onto said first silicon layer at least one additional silicon layer together with the addition of a dopant, diffusing a portion of the dopant from said additional silicon layer into said first silicon layer, and depositing a metal layer in superimposed vertical alignment with respect to said insulating layer and said silicon layers.
Claim 20
Independent Claim
88 words
A method of making a metal-insulator semiconductor device and comprising the steps of: providing a body, forming an insulating layer on said body, depositing a first intrinsic layer of silicon onto said insulating layer, depositing onto said first silicon layer at least one additional silicon layer together with the addition of a dopant, diffusing a portion of the dopant from said additional silicon layer into said first silicon layer, and depositing a metal layer in superimposed vertical alignment with respect to said insulating layer and said silicon layers.
Claim 21
Independent Claim
167 words
A method of making a metal-oxide-semiconductor field-effect device and comprising the steps of: providing a planar silicon body, forming a thin silicon dioxide insulating layer on a surface of said body, depositing a gate comprising a first substantially intrinsic layer of polycrystalline silicon onto said silicon dioxide insulating layer, increasing the thickness of said gate by depositing onto said first intrinsic polycrystalline layer a second polycrystalline silicon layer together with the addition of a dopant at a predetermined concentration, depositing upon said second layer a third polycrystalline silicon layer together with the addition of a dopant at a concentration greater than said predetermined concentration, subjecting said body to subsequent hot processing steps resulting incidentally in diffusion of a portion of the dopant from said second and third polycrystalline silicon layers into and throughout said first polycrystalline silicon layer down to said silicon dioxide insulating layer, and depositing a metal contact onto said gate and in superimposed vertical alignment with respect to said thin silicon dioxide insulating layer.
Claim 22
Independent Claim
167 words
A method of making a metal-oxide-semiconductor field-effect device and comprising the steps of: providing a planar silicon body, forming a thin silicon dioxide insulating layer on a surface of said body, depositing a gate comprising a first substantially intrinsic layer of polycrystalline silicon onto said silicon dioxide insulating layer, increasing the thickness of said gate by depositing onto said first intrinsic polycrystalline layer a second polycrystalline silicon layer together with the addition of a dopant at a predetermined concentration, depositing upon said second layer a third polycrystalline silicon layer together with the addition of a dopant at a concentration greater than said predetermined concentration, subjecting said body to subsequent hot processing steps resulting incidentally in diffusion of a portion of the dopant from said second and third polycrystalline silicon layers into and throughout said first polycrystalline silicon layer down to said silicon dioxide insulating layer, and depositing a metal contact onto said gate and in superimposed vertical alignment with respect to said thin silicon dioxide insulating layer.
Claim 23
Independent Claim
139 words
A method of making a metal-insulator-semiconductor field-effect device and comprising the steps of: providing a planar semiconductor body, forming a thin insulating layer on a surface of said body, depositing a gate comprising a first substantially intrinsic layer of polycrystalline semiconductive material onto said insulating layer, increasing the thickness of said gate by depositing onto said first intrinsic polycrystalline layer a second polycrystalline semiconductive layer together with the addition of a dopant at a predetermined concentration, depositing upon said second layer a third polycrystalline semiconductive layer together with the addition of a dopant at a concentration greater than said predetermined concentration, diffusing a portion of the dopant from said second and third polycrystalline layers into said first polycrystalline layer, and depositing a metal contact onto said gate and in superimposed vertical alignment with respect to said thin insulating layer.
Claim 24
Independent Claim
139 words
A method of making a metal-insulator-semiconductor field-effect device and comprising the steps of: providing a planar semiconductor body, forming a thin insulating layer on a surface of said body, depositing a gate comprising a first substantially intrinsic layer of polycrystalline semiconductive material onto said insulating layer, increasing the thickness of said gate by depositing onto said first intrinsic polycrystalline layer a second polycrystalline semiconductive layer together with the addition of a dopant at a predetermined concentration, depositing upon said second layer a third polycrystalline semiconductive layer together with the addition of a dopant at a concentration greater than said predetermined concentration, diffusing a portion of the dopant from said second and third polycrystalline layers into said first polycrystalline layer, and depositing a metal contact onto said gate and in superimposed vertical alignment with respect to said thin insulating layer.
Claim 25
Independent Claim
125 words
A method of making a metal-oxide-semiconductor field-effect device and comprising the steps of: providing a planar silicon body, forming a thin silicon dioxide insulating layer on a surface of said body, depositing a gate comprising a first substantially intrinsic layer of polycrystalline silicon onto said silicon dioxide insulating layer, increasing the thickness of said gate by depositing onto said first intrinsic polycrystalline layer a second polycrystalline silicon layer together with the addition of a dopant at a predetermined concentration, depositing upon said second layer a third polycrystalline silicon layer together with the addition of a dopant at a concentration greater than said predetermined concentration, and diffusing a portion of the dopant from said second and third polycrystalline silicon layers into said first polycrystalline silicon layer.
Claim 26
Independent Claim
125 words
A method of making a metal-oxide-semiconductor field-effect device and comprising the steps of: providing a planar silicon body, forming a thin silicon dioxide insulating layer on a surface of said body, depositing a gate comprising a first substantially intrinsic layer of polycrystalline silicon onto said silicon dioxide insulating layer, increasing the thickness of said gate by depositing onto said first intrinsic polycrystalline layer a second polycrystalline silicon layer together with the addition of a dopant at a predetermined concentration, depositing upon said second layer a third polycrystalline silicon layer together with the addition of a dopant at a concentration greater than said predetermined concentration, and diffusing a portion of the dopant from said second and third polycrystalline silicon layers into said first polycrystalline silicon layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-02-10 | 1984-08-11 | 1985-02-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-02-10 | 1988-08-11 | 1989-02-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-02-10 | 1992-08-11 | 1993-02-10 | $7700.00 | Window Closed / Lapsed |