Semiconductor device having a Schottky decoupling diode

Claim 1

A semiconductor device comprising: a substrate having a major surface, a diode and at least one field effect transistor integrated monolithically on said substrate with said diode; said transistor being formed by a first n-type semiconductor layer on said major surface of said substrate, said transistor having ohmic source and drain contacts on said first semiconductor layer and a gate electrode located between said source and drain contacts and forming a rectifying junction with said first semiconductor layer; said diode being formed by a second n-type semiconductor layer on the surface of said substrate, said diode having a Schottky anode contact of large surface areas provided on said second semiconductor layer said anode contact comprising a d.c. ground conductor for said device, said diode further having an ohmic cathode contact on said second semiconductor layer which is directly connected to a d.c. supply conductor formed on the surface of said substrate; and means for forming a high-capacity decoupling capacitor which decouples said d.c. supply conductor from said ground conductor during operation of said device and which includes means for polarizing said diode in the nonconductive sense during operation.