US3995301A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Novel integratable Schottky Barrier structure and a method for the fabrication thereof
Assignee: International Business Machines Corp
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Filing: 1974-11-01
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Granted: 1976-11-30
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Expires: 1994-11-01
Abstract
Abstract A novel Schottky Barrier structure which is integratable with standard integrated circuits comprising a metal layer of Al 2 Pt in contact with a high resistivity semiconductor region. The structure is fabricated by first forming a platinum silicide layer on said silicon substrate and then applying a metallic layer comprising aluminum on said first layer, after which the structure is sintered at a temperature of at least 400° C. for at least an hour.
Inventors
- 👤 Ingrid E. Magdo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 15:32
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/60; H10D62/00; H10D62/10; H10D64/00; H10D64/01; H10D64/012; H10D64/0121; H10D64/60; H10D64/64; H10D84/00; H10D84/60; H10D84/611; H10D84/613; H10D84/617
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
64 words
In an integrated circuit structure, a Schottky Barrier device comprising a semiconductor substrate having a maximum conductivity-determining impurity C 0 of 10 18 atoms/cm 3 , and a composite layered contact structure comprising a bottom metallic layer comprising A1 2 Pt in contact with said substrate, a layer comprising aluminum on said bottom layer, and a a contact electrode connected to said contact structure.
Claim 2
Dependent Claim
64 words
In an integrated circuit structure, a Schottky Barrier device comprising a semiconductor substrate having a maximum conductivity-determining impurity C 0 of 10 18 atoms/cm 3 , and a composite layered contact structure comprising a bottom metallic layer comprising A1 2 Pt in contact with said substrate, a layer comprising aluminum on said bottom layer, and a a contact electrode connected to said contact structure.
Claim 3
Dependent Claim
19 words
The structure of claim 1 wherein said semiconductor substrate in contact with said bottom metallic layer is N type.
Claim 4
Dependent Claim
17 words
The structure of claim 1 wherein said layer comprising aluminum further includes up to 5% of copper.
Claim 5
Dependent Claim
12 words
The integrated circuit structure of claim 2 wherein said substrate is silicon.
Claim 6
Dependent Claim
19 words
The integrated circuit structure of claim 4 further including a layer of silicon over said metallic layer comprising aluminum.
Claim 7
Dependent Claim
35 words
The integrated circuit structure of claim 4 wherein the conductivity-determining impurity C 0 of the substrate in contact with said bottom metallic layer is in the order of 5 × 10 16 atoms/cm 3 .
Claim 8
Dependent Claim
148 words
In an integrated circuit structure comprising a surface from which a plurality of regions of different types and concentrations extending into a semiconductor substrate to provide the active and passive devices of the circuit, a layer of insulative material covering said surface and a plurality of metallic contacts extending through openings in said insulative layer to form ohmic and Schottky-Barrier contacts with said regions and electrodes connected to said contacts, the improvement wherein both said ohmic and Schottky-Barrier contacts have the same composite layered contact structure which comprises a bottom metallic layer comprising A1 2 Pt, and a layer comprising aluminum on said bottom layer, and the Schottky-Barrier contacts are made to regions having a maximum conductivity-determining impurity C 0 of 10 18 atoms/cm 3 and the ohmic contacts are made to regions having a conductivity-determining impurity of C 0 of at least 10 19 atoms/cm 3 .
Claim 9
Dependent Claim
148 words
In an integrated circuit structure comprising a surface from which a plurality of regions of different types and concentrations extending into a semiconductor substrate to provide the active and passive devices of the circuit, a layer of insulative material covering said surface and a plurality of metallic contacts extending through openings in said insulative layer to form ohmic and Schottky-Barrier contacts with said regions and electrodes connected to said contacts, the improvement wherein both said ohmic and Schottky-Barrier contacts have the same composite layered contact structure which comprises a bottom metallic layer comprising A1 2 Pt, and a layer comprising aluminum on said bottom layer, and the Schottky-Barrier contacts are made to regions having a maximum conductivity-determining impurity C 0 of 10 18 atoms/cm 3 and the ohmic contacts are made to regions having a conductivity-determining impurity of C 0 of at least 10 19 atoms/cm 3 .
Claim 10
Dependent Claim
17 words
The structure of claim 7 wherein the regions in contact with said Schottky-Barrier contacts are N type.
Claim 11
Dependent Claim
17 words
The structure of claim 7 wherein said layer comprising aluminum further includes up to 5% of copper.
Claim 12
Dependent Claim
13 words
The integrated circuit structure of claim 8 wherein the semiconductor substrate is silicon.
Claim 13
Dependent Claim
19 words
The integrated circuit structure of claim 10 further including a layer of silicon over said metallic layer comprising aluminum.
Claim 14
Dependent Claim
34 words
The integrated circuit structure of claim 10 wherein the conductivity-determining C 0 of the regions to which the Schottky-Barrier contacts are made is in the order of 5 × 10 16 atoms/cm 3 .
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-11-30 | 1980-05-31 | 1980-11-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-11-30 | 1984-05-31 | 1984-11-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-11-30 | 1988-05-31 | 1988-11-30 | $7700.00 | Window Closed / Lapsed |