Schottky Barrier diode with controlled characteristics

Claim 1

A self-isolated Schottky Barrier diode with controlled characteristics, comprising: a semiconductor substrate of a first conductivity type and first concentration; an insulating layer overlying said substrate having a first thickness; a first opening through said insulating layer over a central region, having inclined sidewalls over an annular region surrounding a first region in said substrate; an ion-implanted layer of said first conductivity type in said central region having a substantially Gaussian distribution of its concentration with respect to depth of implantation in said substrate, with the end of said distribution intersecting the surface of said substrate at a second concentration of between 2 and 10 times said first concentration, and having a peak concentration at a first distance in said first region, said second concentration controlling the barrier height for the Schottky Barrier diode; said ion-implanted layer gradually rising toward said substrate surface and substantially parallel with said inclined sidewall; said first distance being greater than said first thickness for said insulating layer so that said distribution intersects said substrate surface at an outside region outside of said annular region at a third concentration which is at least 10 times greater than said second concentration, said third concentration controlling the lifetime of minority carriers in said outside region; a Schottky Barrier contact formed in said first opening forming a rectifying junction with said semiconductor substrate in said central region; a second opening through said insulating layer over said outside region of said substrate; an ohmic contact formed in said second opening, making electrical contact with said ion-implanted layer in said outside region; whereby a self-isolated Schottky Barrier diode is formed with controlled characteristics and a lower series resistance connection is made to said Schottky Barrier diode.