US4136348A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Manufacture of gold barrier schottky diodes
Assignee: Lignes Telegraphiques et Telephoniques LTT SA
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Filing: 1977-07-14
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Granted: 1979-01-23
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Expires: 1997-07-14
Abstract
Abstract A low reverse current gold barrier Schottky diode is produced by introduction of a highly reducing metal layer between the substrate and the gold layer through which the gold is diffused to contact the substrate. As such reducing metal, chromium gives good results.
Inventors
- 👤 Guy Damene
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 10:33
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/012; H10D64/0121; H10D8/00; H10D8/60; Y; Y10; Y10S; Y10S148/00; Y10S148/14
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
81 words
Process for the manufacture of Schottky diodes with a guard ring and a gold-silicon barrier, consisting in that a film of reducing metal having a thickness between several thousand and two hundred angstroms is deposited on the silicon prior to the deposition of the barrier metal film, the structure being subjected to a heat treatment which ensures diffusion of the barrier metal through the reducing film at a temperature above 300° C. but below the formation temperature of the gold-silicon eutectic.
Claim 2
Dependent Claim
81 words
Process for the manufacture of Schottky diodes with a guard ring and a gold-silicon barrier, consisting in that a film of reducing metal having a thickness between several thousand and two hundred angstroms is deposited on the silicon prior to the deposition of the barrier metal film, the structure being subjected to a heat treatment which ensures diffusion of the barrier metal through the reducing film at a temperature above 300° C. but below the formation temperature of the gold-silicon eutectic.
Claim 3
Dependent Claim
57 words
Process for the manufacture of Schottky barrier diodes with a guard ring according to claim 1, wherein the reducing metal is chromium and the heat treatment is carried out at a temperature between 350° C. and less than 377° C. for a period of about one hour and a chromium film of a few thousand angstrom thick.
Claim 4
Dependent Claim
56 words
Process for the manufacture of Schottky barrier diodes having a guard ring with a gold-silicon barrier according to claim 2, wherein the two electrodes of the diode are produced by means of deposition of two successive metal films consisting of a reducing metal in contact with the silicon and of gold above the reducing metal respectively.
Claim 5
Dependent Claim
42 words
Process for the manufacture of Schottky diodes having a guard ring according to claim 1, wherein the reducing metal is titanium and the heat treatment is continued for one hour at 300° C. when the layer has a thickness of 200 A.
Claim 6
Dependent Claim
14 words
A low reverse current Schottky barrier diode produced by the process of claim 1.
References Cited (Backward Citations)
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US3819432A
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US3785892A
Cited
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Cited
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Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1982-01-22 | 1982-07-24 | 1983-01-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1986-01-22 | 1986-07-24 | 1987-01-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1990-01-22 | 1990-07-24 | 1991-01-23 | $7700.00 | Window Closed / Lapsed |