Semiconductor device

Abstract

Abstract PURPOSE:To obtain a GaAs FET having a protective film of a small surface leakage current on the surface by a method wherein a recessed part is provided in a semiconductor active layer, a pair of ohmic electrodes are formed interposing the recessed part between them, and a gate electrode to make Schottky contact with the active layer is provided in said recessed part. CONSTITUTION:A buffer layer 2 and the active layer 3 are made to grow vapor phase epitaxially on a semiinsulating substrate 1 consisting of GaAs, and the source electrode 4 and the drain electrode 5 consisting of AuGe/Au are formed on the layer 3. Then a heat treatment is performed in N2 gas to make alloy layers 6 to be generated under the electrodes thereof, and a heat treatment is performed again in mixed gas of N2 and O2 to form the oxide film 7 between the layers 6. After then, an oxide layer 8 is adhered on the whole surface, and is covered with a resist film 9 having an opening 10 positioning between the electrodes 4, 5, etching is performed using the resist film thereof as the mask to form the recessed part 11 in the active layer 3, and a region 14 formed by thinning thickness of the layer 3 is generated. Then a metal to make Schottky contact is adhered to the whole surface, the gate electrode 15 is left on the region 14, and the unnecessary metal is removed together with the films 9, 8.

Inventors

• 👤 Tatsuo Matsumura
• 👤 達雄 松村

Bibliographic Details