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US5030589A
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Production method for a semiconductor device
Assignee: Mitsubishi Electric Corp
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Filing: 1990-02-09
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Granted: 1991-07-09
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Expires: 2010-02-09
Abstract
Abstract A production method of a semiconductor device includes a first process for producing a gate electrode pattern of double layer structure on a semiconductor substrate, which gate electrode pattern comprises a first layer and a second upper heat-resistant material layers each having different etching property, a second process for plating a resist film on the entire surface of the substrate and etching the same to expose the top portion of the second upper heat-resistant material layer, a third process for removing the second upper heat-resistant material layer, a fourth process for hardening the surface of the resist and conducting over development of the resist, and a fifth process for plating a low resistance metal material on the entire surface of the substrate and removing the low resistance metal material together with the resist film by lift-off method, thereby to produce a gate electrode comprising the first lower heat-resistant material layer and a low resistance metal layer which is produced thereon, wherein the low resistance metal layer has a larger width than that of the first lower heat-resistant material layer.
Inventors
- 👤 Minoru Noda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 17:16
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/061; H10D30/0612; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6738; H10D30/674; H10D30/675; H10D64/00; H10D64/60; H10D64/64; H10D62/00; H10D62/80; H10D62/85; Y; Y10; Y10S; Y10S148/00; Y10S148/10; Y10S148/14
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
130 words
A production method for a semiconductor device comprising: depositing on a semiconductor substrate a gate electrode pattern having a double layer structure comprising a layer of a first refractory metal silicide and a second layer chosen from the group consisting of refractory metals, refractory metal silicides, and refractory metal nitrides, said first and second layers having different etching properties, said first layer contacting said substrate; depositing a resist film on said substrate and said gate pattern and etching the film to expose said second layer; and removing said second layer, depositing a low resistance metal on said resist film and first layer, and removing said resist film with the overlying low resistance metal to produce a gate electrode comprising said first layer and an overlying, self-aligned low resistance metal layer.
Claim 2
Dependent Claim
130 words
A production method for a semiconductor device comprising: depositing on a semiconductor substrate a gate electrode pattern having a double layer structure comprising a layer of a first refractory metal silicide and a second layer chosen from the group consisting of refractory metals, refractory metal silicides, and refractory metal nitrides, said first and second layers having different etching properties, said first layer contacting said substrate; depositing a resist film on said substrate and said gate pattern and etching the film to expose said second layer; and removing said second layer, depositing a low resistance metal on said resist film and first layer, and removing said resist film with the overlying low resistance metal to produce a gate electrode comprising said first layer and an overlying, self-aligned low resistance metal layer.
Claim 3
Dependent Claim
21 words
A production method of a semiconductor device as defined in claim 1, comprising depositing said first and second layers by sputtering.
Claim 4
Dependent Claim
27 words
A production method of a semiconductor device as defined in claim 1 wherein said first layer comprises tungsten silicide, and said second layer comprises tungsten titanium silicide.
Claim 5
Dependent Claim
27 words
A production method of a semiconductor device as defined in claim 2 wherein said first layer comprises tungsten silicide, and said second layer comprises tungsten titanium silicide.
Claim 6
Dependent Claim
31 words
A production method of a semiconductor device as defined in claim 1, comprising etching said resist film by reactive ion etching in a mixture of CF 4 and O 2 .
Claim 7
Dependent Claim
155 words
A production method for a semiconductor device comprising: depositing on a semiconductor substrate a gate electrode pattern having a double layer structure comprising a layer of a first refractory metal silicide and a second layer chosen from the group consisting of refractory metals, refractory metal silicides, and refractory metal nitrides, said first and second layers having different etching properties, said first layer contacting said substrate; depositing a resist film on said substrate and said gate pattern and etching the film to expose said second layer; and removing said second layer; hardening a portion of said resist film and over developing said resist film; and depositing a low resistance metal on said resist film and first layer and removing said resist film with the overlying low resistance metal to produce a gate electrode comprising said first layer and an overlying, self-aligned low resistance metal layer which has a larger width than that of said first layer.
Claim 8
Dependent Claim
155 words
A production method for a semiconductor device comprising: depositing on a semiconductor substrate a gate electrode pattern having a double layer structure comprising a layer of a first refractory metal silicide and a second layer chosen from the group consisting of refractory metals, refractory metal silicides, and refractory metal nitrides, said first and second layers having different etching properties, said first layer contacting said substrate; depositing a resist film on said substrate and said gate pattern and etching the film to expose said second layer; and removing said second layer; hardening a portion of said resist film and over developing said resist film; and depositing a low resistance metal on said resist film and first layer and removing said resist film with the overlying low resistance metal to produce a gate electrode comprising said first layer and an overlying, self-aligned low resistance metal layer which has a larger width than that of said first layer.
Claim 9
Dependent Claim
37 words
A production method of a semiconductor device as defined in claim 6 comprising depositing said gate electrode pattern of said double layer structure, comprises steps of: producing said first and second heat resistant material layers by sputtering.
Claim 10
Dependent Claim
27 words
A production method of a semiconductor device as defined in claim 6 wherein said first layer comprises tungsten silicide, and said second layer comprises tungsten titanium silicide.
Claim 11
Dependent Claim
27 words
A production method of a semiconductor device as defined in claim 7, wherein said first layer comprises tungsten silicide, and said second layer comprises tungsten titanium silicide.
Claim 12
Dependent Claim
31 words
A production method of a semiconductor device as defined in claim 6 comprising etching said resist film by reactive ion etching in a mixture of CF 4 and O 2 .
Claim 13
Dependent Claim
20 words
A production method of a semiconductor device as defined in claim 6, comprising hardening of said resist film by annealing.
Claim 14
Dependent Claim
21 words
A production method of a semiconductor device as defined in claim 6, comprising hardening said resist by irradiation with ultraviolet rays.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1994-07-08 | 1995-01-07 | 1995-07-09 | $2000.00 | Window Closed / Lapsed |
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