EP0108251A2
Expired / Lapsed
EP
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A semiconductor device comprising an electrode and/or an interconnection
Assignee: Hitachi Ltd
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Filing: 1983-10-04
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Granted: —
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Expires: 2003-10-04
Abstract
Abstract A semiconductor device comprising an electrode or interconnection made of an insulator film (2), a tungsten film (3) and a phosphosilicate glass film (4) which are stacked and formed on a semiconductor substrate (1). Canneling attributed to the punch-through of ions during ion implantation and fluctuations in the threshold voltage can be effectively prevented, so that the semiconductor device has stable characteristics.
Inventors
- 👤 Nobuyoshi Kobayashi
- 👤 Seiichi Iwata
- 👤 Naoki Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 17:42
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6923; H10W; H10W74/00; H10W74/40; H10W74/43; H10D; H10D64/00; H10D64/20; H10D64/27; H10D64/311; H10D64/60; H10D64/66; H10D64/665; H10P14/20; H10P14/29; H10P14/2901; H10P14/2922; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4437; H10W20/4441; H10W74/10; H10W74/131; H10W74/137; H10W74/481
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
47 words
P semiconductor device comprising an electrode and/or an interconnection made of a stacked film of a tunqsten film (3) and a phosphosilicate class film (4) which are stacked and formed on an insulator film (2) formed on a semiconductor substrate (1) and which have a desired shape.
Claim 2
Dependent Claim
47 words
P semiconductor device comprising an electrode and/or an interconnection made of a stacked film of a tunqsten film (3) and a phosphosilicate class film (4) which are stacked and formed on an insulator film (2) formed on a semiconductor substrate (1) and which have a desired shape.
Claim 3
Dependent Claim
31 words
A semiconductor device according to claim 1, wherein said phosphosilicate glass film (4) has a phosphorus oxide concentration of approximately 1.2 to 14 mol %, preferably 1.5 to 12 mol %.
Claim 4
Dependent Claim
24 words
A semiconductor device according to claim 1 or 2, wherein said phosphosilicate glass film (4) has a thickness of approximately 20 to 100 nm.
Claim 5
Dependent Claim
26 words
A semiconductor device according to any of claims 1 to 3, wherein said tungsten film (3) has a thickness of approximately 100 nm to 1,000 nm.
Claim 6
Dependent Claim
25 words
A semiconductor device according to any of claims 1 to 4, wherein said tunasten film (3) is a gate electrode of a M OS transistor.
References Cited (Backward Citations)
No citation records indexed.
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