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US4948753A
Expired / Lapsed
US
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Method of producing stripe-structure semiconductor laser
Assignee: Panasonic Holdings Corp
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Filing: 1987-10-29
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Granted: 1990-08-14
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Expires: 2007-10-29
Abstract
Abstract A semiconductor laser and a method of producing the same wherein the semiconductor laser is produced by forming a stripe-shaped projection on the surface of a semiconductor substrate, and forming multilayered thin films with a double heterostructure including an active layer on said semiconductor substrate by using the metal organic chemical vapor phase epitaxial growth method or the molecular beam epitaxial growth method. Thus, a buried stripe-structure semiconductor laser can be produced by a sequence of crystal growth processes.
Inventors
- 👤 Akio Yoshikawa
- 👤 Takashi Sugino
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 02:27
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/227; Y; Y10; Y10S; Y10S148/00; Y10S148/095; Y10S148/11
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
117 words
A method of producing a semiconductor laser, comprising the steps of: forming a stripe-shaped projection along a <011> direction on a (100) surface of a semiconductor substrate by chemical etching; growing on said (100) surface of said semiconductor substrate and on said projection, multilayered thin films with a buried double heterostructure including an active layer, the top layer of which has the same conductivity as that of said semiconductor substrate, by using a metal organic chemical vapor phase epitaxial growth method or a molecular beam epitaxial growth method; and doping an impurity of the conductivity type opposite to that of said semiconductor substrate into the top layer of said multilayered thin films formed on said stripe-shaped projection.
Claim 2
Independent Claim
117 words
A method of producing a semiconductor laser, comprising the steps of: forming a stripe-shaped projection along a <011> direction on a (100) surface of a semiconductor substrate by chemical etching; growing on said (100) surface of said semiconductor substrate and on said projection, multilayered thin films with a buried double heterostructure including an active layer, the top layer of which has the same conductivity as that of said semiconductor substrate, by using a metal organic chemical vapor phase epitaxial growth method or a molecular beam epitaxial growth method; and doping an impurity of the conductivity type opposite to that of said semiconductor substrate into the top layer of said multilayered thin films formed on said stripe-shaped projection.
Claim 3
Dependent Claim
20 words
The method of producing a semiconductor laser according to claim 1, wherein said stripe-shaped projection has a reverse mesa shape.
References Cited (Backward Citations)
US4404678A
Cited
US4366568A
Cited
JPS5743428A
Cited
JPS57139982A
Cited
JPS57139986A
Cited
US4429395A
Cited
US4506366A
Cited
JPS5810884A
Cited
JPS5886789A
Cited
US4647953A
Cited
JPS6020594A
Cited
JPS6021586A
Cited
US4569721A
Cited
US4637122A
Cited
JPS6068685A
Cited
JPS6077482A
Cited
US4648940A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-08-13 | 1994-02-12 | 1994-08-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-08-13 | 1998-02-12 | 1998-08-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-08-13 | 2002-02-12 | 2002-08-14 | $7700.00 | Window Closed / Lapsed |