US4647953A
Expired / Lapsed
US
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Semiconductor laser device and method for manufacturing the same
Assignee: Toshiba Corp
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Filing: 1984-01-13
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Granted: 1987-03-03
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Expires: 2004-01-13
Abstract
Abstract A rib-waveguide semiconductor laser device comprising a first clad layer, an active layer, an optical rib-waveguide layer and a second clad layer, each composed of III-V semiconductor material, and sequentially formed on an insulating substrate or a III-V semiconductor substrate, wherein the rib-waveguide layer contains aluminum. A method for manufacturing the semiconductor laser device as defined above wherein the second clad layer is formed by metal-organic material chemical vapor deposition or molecular beam epitaxy.
Inventors
- 👤 Masaki Okajima
- 👤 Nawoto Motegi
- 👤 Yuhei Muto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 14:04
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/223; H01S5/2231; H01S5/2054; H01S5/2059
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
105 words
A semiconductor laser device having at least a first clad layer of a III-V semiconductor material, an active layer of a III-V semiconductor material, an optical waveguide layer of a III-V semiconductor material, and a second clad layer of a III-V semiconductor material which are sequentially formed on one of an insulating substrate and a III-V semiconductor substrate, and a stripe-like projection is formed on said optical waveguide layer, wherein said optical waveguide layer contains aluminum among III group elements in a ratio (as expressed by Al x ) of x>0.33 (where a total content of all III group elements is given to be 1).
Claim 2
Dependent Claim
105 words
A semiconductor laser device having at least a first clad layer of a III-V semiconductor material, an active layer of a III-V semiconductor material, an optical waveguide layer of a III-V semiconductor material, and a second clad layer of a III-V semiconductor material which are sequentially formed on one of an insulating substrate and a III-V semiconductor substrate, and a stripe-like projection is formed on said optical waveguide layer, wherein said optical waveguide layer contains aluminum among III group elements in a ratio (as expressed by Al x ) of x>0.33 (where a total content of all III group elements is given to be 1).
Claim 3
Dependent Claim
48 words
A device according to claim 1, wherein said optical waveguide layer comprises a material selected from the group consisting of an Al x Ga 1- As type semiconductor, an Al x Ga 1-x AsP type and an In y (Al x Ga 1-x ) 1-y P type semiconductor.
Claim 4
Dependent Claim
24 words
A device according to claim 1, further comprising an impurity diffusion layer in a vicinity of said optical waveguide layer to perform current limiting.
Claim 5
Dependent Claim
28 words
A device according to claim 1, further comprising an impurity diffusion layer on an upper surface of said optical waveguide layer at two edges of said stripe-like projection.
Claim 6
Dependent Claim
27 words
A device according to claim 1, further comprising an insulating layer on an upper surface of said optical waveguide layer at two edges of said stripe-like projection.
Claim 7
Dependent Claim
19 words
A device according to claim 1, wherein x in Al x is in the range of 0.33 to 0.9.
Claim 8
Independent Claim
107 words
A method for manufacturing a semiconductor laser device, comprising the steps of: (i) forming a first clad layer of a III-V semiconductor material and an active layer of a III-V semiconductor material on one of an insulating substrate and a III-V semiconductor substrate; (ii) growing on said active layer an optical waveguide layer of a III-V semiconductor material which contains aluminum as a constituent element; (iii) selectively etching said optical waveguide layer to form a stripe-like projection thereon; and (iv) forming a second clad layer of a III-V semiconductor material by one of metal-organic material chemical vapor deposition and molecular beam epitaxy on said optical waveguide layer.
Claim 9
Independent Claim
107 words
A method for manufacturing a semiconductor laser device, comprising the steps of: (i) forming a first clad layer of a III-V semiconductor material and an active layer of a III-V semiconductor material on one of an insulating substrate and a III-V semiconductor substrate; (ii) growing on said active layer an optical waveguide layer of a III-V semiconductor material which contains aluminum as a constituent element; (iii) selectively etching said optical waveguide layer to form a stripe-like projection thereon; and (iv) forming a second clad layer of a III-V semiconductor material by one of metal-organic material chemical vapor deposition and molecular beam epitaxy on said optical waveguide layer.
Claim 10
Dependent Claim
26 words
A method according to claim 7, further comprising a step (v) of forming said second clad layer and an ohmic contact layer after said step (iv).
Claim 11
Dependent Claim
39 words
A method according to claim 8, further comprising a step (vi) of aligning a mask with said projection by referring to both side edges of said ohmic contact layer after the step (v) for defining a current limiting region.
References Cited (Backward Citations)
No citation records indexed.
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| 3.5 Years (Year 4) | 1990-03-02 | 1990-09-01 | 1991-03-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-03-02 | 1994-09-01 | 1995-03-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-03-02 | 1998-09-01 | 1999-03-03 | $7700.00 | Window Closed / Lapsed |