Manufacure of semiconductor laser

Abstract

Abstract PURPOSE:To enhance roundness of circle and an output of a semiconductor laser by a method wherein at the side of a wedged stripe region on a semiconductor substrate of one conductive type a buffer layer of reversely conductive type is provided, and subsequently a clad layer, an active layer and a clad layer are sequentially provided. CONSTITUTION:On an N type GaAs substrate 21 wedged stripe region 21a is formed and after a P type Ga1-xAlxAs buffer layers 22 is grown at its side, an N type Ga1-xAlxAs layer 23, an undoped Ga1-yAlyAs active layer 24, a P type Ga1-xAlxAs layer 25 and a P type GaAs layer 26 are grown with liquid phase epitaxial growth, and by Zn diffusion a current path 27 is formed. Thereby a high power oscillating laser having a good roundness of circle at a low threshold current is obtained.

Inventors

• 👤 Keiichi Yoshitoshi

Bibliographic Details