Manufacture of semiconductor laser

Abstract

Abstract PURPOSE:To enhance the reliability with excellent mass productivity and low oscillating threshold value by employing a MO-CVD method in the growth of a crystal after forming a current block layer. CONSTITUTION:A P type Al0.4Ga0.6As layer 21 has a mesa 22 from the shape of a mesa 20 of a GaAs substrate 19. Then, an etching mask 23 is formed on the surface of a P type Al0.4Ga0.6As layer 21 except the mesa 22, and etched, then etched with fluoric acid to expose the mesa 11 in the desired height. Thus, a substrate crystal having a current block layer is formed, then an N type Al0.3Ga0.7As layer 24, a GaAs active layer 25, a P type Al0.3Ga0.7As layer 26 and a P type GaAs layer 27 are formed by the MO-CVD method. Eventually, a P type electrode 28 and N type electrode 29 are formed, to complete a semiconductor laser. Thus, excellent mass productivity, low oscillating threshold and high reliability can be provided.

Inventors

• 👤 Masaaki Nidou
• 👤 正明 仁道

Bibliographic Details