Semiconductor laser photodetector photointegrated element

Abstract

Abstract PURPOSE:To improve the photodetecting sensitivity by composing a photodetector of a P-N junction laser and a photoconductor when a buried hetero structure semiconductor laser and the photodetector are arranged in parallel with each other as a photointegrated element, and connecting them in series with each other. CONSTITUTION:An N type InP buffer layer 102, an InGaAsP active layer 103, a P type InP clad layer 104, and a non-doped InGaAsP layer 105 to become a photoconductor are laminated on an N type InP substrate 101 having (011) plane, and are epitaxially grown. Then, mesa stripes 106, 107 for laser and detector are formed in parallel with the direction (110) by photoresist technique. In this structure, the layer 105 is lacked on the upper surface of the stripe 106. Thereafter, P type and N type current block layers 108, 109 are grown without presence on the stripes 106, 107, the P type InP buried layer 110 is grown on the overall surface, and a proton implanted insulating layer 114 is used to shield between the stripes 106 and 107.

Inventors

• 👤 Mitsuhiro Kitamura
• 👤 北村　光弘

Bibliographic Details