US4948753A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing stripe-structure semiconductor laser
Assignee: Panasonic Holdings Corp
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Filing: 1987-10-29
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Granted: 1990-08-14
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Expires: 2007-10-29
Abstract
Abstract A semiconductor laser and a method of producing the same wherein the semiconductor laser is produced by forming a stripe-shaped projection on the surface of a semiconductor substrate, and forming multilayered thin films with a double heterostructure including an active layer on said semiconductor substrate by using the metal organic chemical vapor phase epitaxial growth method or the molecular beam epitaxial growth method. Thus, a buried stripe-structure semiconductor laser can be produced by a sequence of crystal growth processes.
Inventors
- 👤 Akio Yoshikawa
- 👤 Takashi Sugino
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 01:16
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/22; H01S5/227; Y; Y10; Y10S; Y10S148/00; Y10S148/095; Y10S148/11
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
117 words
A method of producing a semiconductor laser, comprising the steps of: forming a stripe-shaped projection along a <011> direction on a (100) surface of a semiconductor substrate by chemical etching; growing on said (100) surface of said semiconductor substrate and on said projection, multilayered thin films with a buried double heterostructure including an active layer, the top layer of which has the same conductivity as that of said semiconductor substrate, by using a metal organic chemical vapor phase epitaxial growth method or a molecular beam epitaxial growth method; and doping an impurity of the conductivity type opposite to that of said semiconductor substrate into the top layer of said multilayered thin films formed on said stripe-shaped projection.
Claim 2
Independent Claim
117 words
A method of producing a semiconductor laser, comprising the steps of: forming a stripe-shaped projection along a <011> direction on a (100) surface of a semiconductor substrate by chemical etching; growing on said (100) surface of said semiconductor substrate and on said projection, multilayered thin films with a buried double heterostructure including an active layer, the top layer of which has the same conductivity as that of said semiconductor substrate, by using a metal organic chemical vapor phase epitaxial growth method or a molecular beam epitaxial growth method; and doping an impurity of the conductivity type opposite to that of said semiconductor substrate into the top layer of said multilayered thin films formed on said stripe-shaped projection.
Claim 3
Dependent Claim
20 words
The method of producing a semiconductor laser according to claim 1, wherein said stripe-shaped projection has a reverse mesa shape.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-08-13 | 1994-02-12 | 1994-08-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-08-13 | 1998-02-12 | 1998-08-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-08-13 | 2002-02-12 | 2002-08-14 | $7700.00 | Window Closed / Lapsed |