Patent US4915772A successfully refreshed from Google Patents.
US4915772A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Capping layer for recrystallization process
Assignee: Corning Inc
•
Filing: 1986-10-01
•
Granted: 1990-04-10
•
Expires: 2006-10-01
Abstract
Abstract An improved method for crystallizing amorphous or polycrystalline material is disclosed, which method employs a novel intermediate product. A film of material to be crystallized is formed on a substrate. A porous silica cap is formed over the film. The resultant intermediate product is heated to melt the film which crystallizes upon cooling. Gases generated during melting of the film escape through the porous cap which also functions to prevent deleterious agglomeration of the material while it is in a molten state.
Inventors
- 👤 Francis P. Fehlner
- 👤 Roger A. Miller
- 👤 Arthur J. Whitman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 11:09
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3808; H10P14/3814; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2921; H10P14/2922; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3458; H10P14/3466; H10P14/381; H10P14/382; H10P34/00; H10P34/40; H10P34/42; Y; Y10; Y10S; Y10S117/00; Y10S117/905
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
185 words
A method of enhancing the surface smoothness of a film of semiconductive material which has been deposited on a surface of refractory material and thereafter crystallized, said method comprising the steps of depositing a capping layer over said film prior to crystallizing said film to prevent agglomeration of said film while it is in a molten state while said film is being crystallized, and applying heat to said film while it is sandwiched between said capping layer and said refractory material surface to crystallize said film, wherein the step of depositing a capping layer comprises generating a vapor from a silicon source and positioning said substrate such that said vapor deposits on said film, the step of depositing being carried out in oxygen, whereby said vapor reacts with said oxygen to form an oxide of silicon, the partial pressure of said oxygen during the step of depositing being sufficiently low that a silicon-rich capping layer is formed, said capping layer being deposited under such conditions that it is sufficiently porous that gases generated while said film is being crystallized are vented through said capping layer.
Claim 2
Independent Claim
185 words
A method of enhancing the surface smoothness of a film of semiconductive material which has been deposited on a surface of refractory material and thereafter crystallized, said method comprising the steps of depositing a capping layer over said film prior to crystallizing said film to prevent agglomeration of said film while it is in a molten state while said film is being crystallized, and applying heat to said film while it is sandwiched between said capping layer and said refractory material surface to crystallize said film, wherein the step of depositing a capping layer comprises generating a vapor from a silicon source and positioning said substrate such that said vapor deposits on said film, the step of depositing being carried out in oxygen, whereby said vapor reacts with said oxygen to form an oxide of silicon, the partial pressure of said oxygen during the step of depositing being sufficiently low that a silicon-rich capping layer is formed, said capping layer being deposited under such conditions that it is sufficiently porous that gases generated while said film is being crystallized are vented through said capping layer.
Claim 3
Independent Claim
157 words
A method of enhancing the surface smoothness of a film of semiconductive material which has been deposited on a surface of refractory material and thereafter crystallized, said method comprising the steps of depositing a capping layer over said film prior to crystallizing said film to prevent agglomeration of said film while it is in a molten state while said film is being crystallized, and applying heat to said film while it is sandwiched between said capping layer and said refractory material surface to crystallize said film, wherein the step of depositing a capping layer comprises evaporating silicon from a source in the presence of oxygen and positioning said substrate such that said vapor deposits on said film and forms a SiO 2 capping layer having a thickness of at least 0.4 μm, said capping layer being deposited under such conditions that it is sufficiently porous that gases generated while said film is being crystallized are vented therethrough.
Claim 4
Independent Claim
157 words
A method of enhancing the surface smoothness of a film of semiconductive material which has been deposited on a surface of refractory material and thereafter crystallized, said method comprising the steps of depositing a capping layer over said film prior to crystallizing said film to prevent agglomeration of said film while it is in a molten state while said film is being crystallized, and applying heat to said film while it is sandwiched between said capping layer and said refractory material surface to crystallize said film, wherein the step of depositing a capping layer comprises evaporating silicon from a source in the presence of oxygen and positioning said substrate such that said vapor deposits on said film and forms a SiO 2 capping layer having a thickness of at least 0.4 μm, said capping layer being deposited under such conditions that it is sufficiently porous that gases generated while said film is being crystallized are vented therethrough.
Claim 5
Dependent Claim
29 words
A method in accordance with claim 2 wherein the partial pressure of said oxygen during the step of depositing is sufficiently low that a silicon-rich capping layer is formed.
References Cited (Backward Citations)
US3929529A
Cited
US4371421A
Cited
US4565599A
Cited
US4461670A
Cited
US4497683A
Cited
US4632723A
Cited
US4592799A
Cited
US4444620A
Cited
US4590130A
Cited
US4536251A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-04-09 | 1993-10-09 | 1994-04-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-04-09 | 1997-10-09 | 1998-04-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-04-09 | 2001-10-09 | 2002-04-10 | $7700.00 | Window Closed / Lapsed |