US4565599A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Graphoepitaxy by encapsulation
Assignee: Massachusetts Institute of Technology
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Filing: 1984-12-10
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Granted: 1986-01-21
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Expires: 2004-12-10
Abstract
Abstract Improvements on the graphoepitaxial process for obtaining epitaxial or preferred orientation films are described wherein a cap of material is formed over the film to be oriented, artificial surface-relief structure may be present in the substrate, the cap, or both, and the film may be heated by irradiation with electromagnetic radiation.
Inventors
- 👤 Michael W. Geis
- 👤 Henry I. Smith
- 👤 Dimitri A. Antoniadis
- 👤 Dale C. Flanders
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 19:32
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2922; C; C30; C30B; C30B1/00; C30B1/02; C30B13/00; C30B13/34; C30B29/00; C30B29/60; C30B29/64; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3466; H10P14/38; H10P14/3802; H10P14/382; Y; Y10; Y10S; Y10S117/00; Y10S117/913; Y10S148/00; Y10S148/152
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
96 words
A method of enhancing epitaxy or preferred orientation in a silicon film on a silicon dioxide substrate which method includes the steps of depositing a silicon film to be oriented on the surface of a solid silicon dioxide substrate, depositing a cap of material over said film to be oriented prior to crystallizing said film so that said cap coacts with said substrate and helps enhance epitaxy or preferred orientation in said film when said film is crystallized, and applying heat to said film while sandwiched between said cap and said substrate to crystallize said film.
Claim 2
Independent Claim
96 words
A method of enhancing epitaxy or preferred orientation in a silicon film on a silicon dioxide substrate which method includes the steps of depositing a silicon film to be oriented on the surface of a solid silicon dioxide substrate, depositing a cap of material over said film to be oriented prior to crystallizing said film so that said cap coacts with said substrate and helps enhance epitaxy or preferred orientation in said film when said film is crystallized, and applying heat to said film while sandwiched between said cap and said substrate to crystallize said film.
Claim 3
Independent Claim
97 words
A method of enhancing epitaxy or preferred orientation in a film on a substrate which method includes the steps of depositing a film to be oriented on the surface of a solid substrate, depositing a cap of material over said film to be oriented prior to crystallizing said film so that said cap coacts with said substrate and helps enhance epitaxy or preferred orientation in said film when said film is crystallized, applying heat to said film while sandwiched between said cap and said substrate to crystallize said film, and forming said film into discrete spaced portions.
Claim 4
Independent Claim
97 words
A method of enhancing epitaxy or preferred orientation in a film on a substrate which method includes the steps of depositing a film to be oriented on the surface of a solid substrate, depositing a cap of material over said film to be oriented prior to crystallizing said film so that said cap coacts with said substrate and helps enhance epitaxy or preferred orientation in said film when said film is crystallized, applying heat to said film while sandwiched between said cap and said substrate to crystallize said film, and forming said film into discrete spaced portions.
Claim 5
Independent Claim
106 words
A method of enhancing epitaxy or preferred orientation in a film on a substrate which method includes the steps of depositing a film to be oriented on the surface of a solid substrate, depositing a cap of material over said film to be oriented prior to crystallizing said film so that said cap coacts with said substrate and helps enhance epitaxy or preferred orientation in said film when said film is crystallized, applying heat to said film while sandwiched between said cap and said substrate to crystallize said film, and forming an artificial surface relief structure in at least one of said cap and said substrate.
Claim 6
Independent Claim
106 words
A method of enhancing epitaxy or preferred orientation in a film on a substrate which method includes the steps of depositing a film to be oriented on the surface of a solid substrate, depositing a cap of material over said film to be oriented prior to crystallizing said film so that said cap coacts with said substrate and helps enhance epitaxy or preferred orientation in said film when said film is crystallized, applying heat to said film while sandwiched between said cap and said substrate to crystallize said film, and forming an artificial surface relief structure in at least one of said cap and said substrate.
Claim 7
Independent Claim
98 words
A method of enhancing epitaxy or preferred orientation in a film on a substrate which method includes the steps of depositing a film to be oriented on the surface of a solid substrate, depositing a cap of material over said film to be oriented prior to crystallizing said film so that said cap coacts with said substrate and helps enhance epitaxy or preferred orientation in said film when said film is crystallized, applying heat to said film while sandwiched between said cap and said substrate to crystallize said film, and heating said film by irradiation with electromagnetic radiation.
Claim 8
Independent Claim
98 words
A method of enhancing epitaxy or preferred orientation in a film on a substrate which method includes the steps of depositing a film to be oriented on the surface of a solid substrate, depositing a cap of material over said film to be oriented prior to crystallizing said film so that said cap coacts with said substrate and helps enhance epitaxy or preferred orientation in said film when said film is crystallized, applying heat to said film while sandwiched between said cap and said substrate to crystallize said film, and heating said film by irradiation with electromagnetic radiation.
Claim 9
Dependent Claim
56 words
A method of enhancing epitaxy or preferred orientation in accordance with claim 1 wherein said step of applying heat to said film while sandwiched between said cap and said substrate to crystallize said film includes heating the sandwich comprising said substrate, said film and said cap between a lower strip heater and an upper strip heater.
Claim 10
Dependent Claim
19 words
A method of enhancing epitaxy or preferred orientation in accordance with claim 1 wherein said cap is silicon dioxide.
Claim 11
Dependent Claim
19 words
A method of enhancing epitaxy or preferred orientation in accordance with claim 5 wherein said cap is silicon dioxide.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1989-01-20 | 1989-07-22 | 1990-01-21 | $2000.00 | Window Closed / Lapsed |
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