← Back to Patent Explorer
US4632723A Expired / Lapsed US ⏱️ 0.0 years remaining

Orientation filtering for crystalline films

Assignee: Massachusetts Institute of Technology
•
Filing: 1983-03-31
•
Granted: 1986-12-30
•
Expires: 2003-03-31
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract A substrate is coated with a film to be recrystallized. A pattern of crystallization barriers is created in the film, for example, by etching voids in the film. An encapsulation layer is generally applied to protect the film, fill the voids and otherwise enhance a recrystallization process. Recrystallization is carried out such that certain orientations pass preferentially through the barrier, generally as a result of growth-velocity anisotropy. The result is a film of a specific predetermined crystallographic orientation, a range of orientations or a set of discrete orientations.

Inventors

  • 👤 Henry I. Smith
  • 👤 Harry A. Atwater
  • 👤 Carl V. Thompson
  • 👤 Michael W. Geis

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-28 02:05
CPC Classifications
C; C30; C30B; C30B13/00; C30B13/34; Y; Y10; Y10S; Y10S117/00; Y10S117/913; Y10S117/918

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 63 words
A method of forming a crystalline film with a modified distribution of crystallographic orientations upon a substrate, the method comprising: (a) depositing a film to be processed upon the surface of a substrate; (b) etching a pattern of crystallization barriers in the film; and (c) heating the film to induce recrystallization, whereby the pattern of barriers will prevent the growth of non-conforming orientations.
Claim 2
Independent Claim 63 words
A method of forming a crystalline film with a modified distribution of crystallographic orientations upon a substrate, the method comprising: (a) depositing a film to be processed upon the surface of a substrate; (b) etching a pattern of crystallization barriers in the film; and (c) heating the film to induce recrystallization, whereby the pattern of barriers will prevent the growth of non-conforming orientations.
Claim 3
Dependent Claim 22 words
The method of claim 1 wherein the method further comprises covering the film with an encapsulation layer after the pattern is established.
Claim 4
Dependent Claim 54 words
The method of claim 1 wherein said step of etching a pattern of crystallization barriers in the film creates voids in the film and the method further comprises covering the film with an encapsulation layer after the film has been etched so as to fill the voids formed by etching with the encapsulating material.
Claim 5
Dependent Claim 21 words
The method of claim 1 wherein the step of heating the film further comprises passing a heated zone through the film.
Claim 6
Dependent Claim 39 words
The method of claim 4 wherein the step of establishing a pattern further comprises establishing a pattern of rectangular-shaped voids having their long axes perpendicular to the direction in which the heated zone is subsequently passed through the film.

References Cited (Backward Citations)

US4333792A Cited
US4479846A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1989-12-29 1990-06-30 1990-12-30 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1993-12-29 1994-06-30 1994-12-30 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1997-12-29 1998-06-30 1998-12-30 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag