US4855805A
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Nonlinear semiconductor element, liquid crystal display panel using the same and their manufacturing methods
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1988-06-03
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Granted: 1989-08-08
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Expires: 2008-06-03
Abstract
Abstract The present invention provides a nonlinear semiconductor element which has a V-I characteristic of excellent origin symmetry and a liquid crystal display panel which employs such nonlinear semiconductor element. The nonlinear semiconductor has an n-i-n, n-i-p-i-n, or p-i-n-i-p type structure. The i-type semiconductor layer is intentionally doped with boron, which acts to make the i-type semiconductor layer more intrinsic.
Inventors
- 👤 Shunpei Yamazaki
- 👤 Akira Mase
- 👤 Toshimitsu Konuma
- 👤 Minoru Miyazaki
- 👤 Mitsunori Sakama
- 👤 Takashi Inushima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 01:43
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/1365; H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/834; H10D8/00; H10D8/50; H10D86/00; H10D86/40; H10D86/60
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
130 words
A nonlinear semiconductor element comprising: a first conductive layer serving as a first electrode; a non-single-crystal semiconductor layer laminate member formed on the first electrode; and a second conductive layer formed on the non-single-crystal semiconductor layer laminate member and serving as a second electrode; wherein the non-single-crystal semiconductor layer laminate member consists of an n-type first non-single-crystal semiconductor layer formed on the first conductive layer, a boron doped i-type second non-single-crystal semiconductor layer, formed on the first non-single-crystal semiconductor layer, and an n-type third non-single-crystal semiconductor layer formed on the i-type second semiconductor layer to thus effect an nin junction, and wherein the i-type second non-single-crystal semiconductor layer is doped with said boron without influencing the conductivity type of the i-type semiconductor layer to thus symmetrically form said nin junction.
Claim 2
Dependent Claim
130 words
A nonlinear semiconductor element comprising: a first conductive layer serving as a first electrode; a non-single-crystal semiconductor layer laminate member formed on the first electrode; and a second conductive layer formed on the non-single-crystal semiconductor layer laminate member and serving as a second electrode; wherein the non-single-crystal semiconductor layer laminate member consists of an n-type first non-single-crystal semiconductor layer formed on the first conductive layer, a boron doped i-type second non-single-crystal semiconductor layer, formed on the first non-single-crystal semiconductor layer, and an n-type third non-single-crystal semiconductor layer formed on the i-type second semiconductor layer to thus effect an nin junction, and wherein the i-type second non-single-crystal semiconductor layer is doped with said boron without influencing the conductivity type of the i-type semiconductor layer to thus symmetrically form said nin junction.
Claim 3
Dependent Claim
147 words
A nonlinear semiconductor element comprising: a first conductive layer serving as a first electrode; a non-single-crystal semiconductor layer laminate member formed on the first electrode; and a second conductive layer formed on the non-single-crystal semiconductor layer laminate member and serving as a second electrode; wherein the non-single-crystal semiconductor layer laminate member consists of a p or n -type first non-single-crystal semiconductor layer formed on the first conductive layer, an i-type second non-single-crystal semiconductor layer formed on the first non-single-crystal semiconductor layer, and a third non-single-crystal semiconductor layer having the same conductivity type as that of the first non-single-crystal semiconductor layer formed on the i-type second non-single-crystal semiconductor layer to thus effect an nin or pip junction; and wherein the i-type second semiconductor layer contains carbon, nitrogen or oxygen without influencing the conductivity type of the i-type semiconductor layer to thus symmetrically form said nin or pip junction.
Claim 4
Dependent Claim
147 words
A nonlinear semiconductor element comprising: a first conductive layer serving as a first electrode; a non-single-crystal semiconductor layer laminate member formed on the first electrode; and a second conductive layer formed on the non-single-crystal semiconductor layer laminate member and serving as a second electrode; wherein the non-single-crystal semiconductor layer laminate member consists of a p or n -type first non-single-crystal semiconductor layer formed on the first conductive layer, an i-type second non-single-crystal semiconductor layer formed on the first non-single-crystal semiconductor layer, and a third non-single-crystal semiconductor layer having the same conductivity type as that of the first non-single-crystal semiconductor layer formed on the i-type second non-single-crystal semiconductor layer to thus effect an nin or pip junction; and wherein the i-type second semiconductor layer contains carbon, nitrogen or oxygen without influencing the conductivity type of the i-type semiconductor layer to thus symmetrically form said nin or pip junction.
Claim 5
Dependent Claim
18 words
A nonlinear semiconductor element according to claim 2 wherein the i-type second semiconductor layer is doped with boron.
Claim 6
Dependent Claim
165 words
A liquid crystal display panel comprising: a liquid crystal display device having a nonlinear semiconductor element and a liquid crystal element electrically connected in series with the nonlinear semiconductor element; wherein the nonlinear semiconductor element has a first conductive layer serving as a first electrode, a non-single-crystal semiconductor layer laminate member formed on the first electrode and a second conductive layer formed on the non-single-crystal semiconductor layer laminate member and serving as a second electrode; wherein the non-single-crystal semiconductor layer laminate member consists of an n type first non-single-crystal semiconductor layer formed on the first conductive layer, a boron doped i-type second non-single-crystal semiconductor layer formed on the first non-single-crystal semiconductor layer, and an n type third non-single-crystal semiconductor layer formed on the i-type second non-single-crystal semiconductor layer to thus effect an nin junction, and wherein the i-type second non-single-crystal semiconductor layer is doped with boron without influencing the conductivity type of the i-type semiconductor layer to thus symmetrically form said nin or pip junction.
Claim 7
Dependent Claim
165 words
A liquid crystal display panel comprising: a liquid crystal display device having a nonlinear semiconductor element and a liquid crystal element electrically connected in series with the nonlinear semiconductor element; wherein the nonlinear semiconductor element has a first conductive layer serving as a first electrode, a non-single-crystal semiconductor layer laminate member formed on the first electrode and a second conductive layer formed on the non-single-crystal semiconductor layer laminate member and serving as a second electrode; wherein the non-single-crystal semiconductor layer laminate member consists of an n type first non-single-crystal semiconductor layer formed on the first conductive layer, a boron doped i-type second non-single-crystal semiconductor layer formed on the first non-single-crystal semiconductor layer, and an n type third non-single-crystal semiconductor layer formed on the i-type second non-single-crystal semiconductor layer to thus effect an nin junction, and wherein the i-type second non-single-crystal semiconductor layer is doped with boron without influencing the conductivity type of the i-type semiconductor layer to thus symmetrically form said nin or pip junction.
Claim 8
Dependent Claim
170 words
A liquid crystal display panel comprising: a liquid crystal display device having a nonlinear semiconductor element and a liquid crystal element electrically connected in series with the nonlinear semiconductor element; wherein the nonlinear semiconductor element has a first conductive layer serving as a first electrode, a non-single-crystal semiconductor layer laminate member formed on the first electrode and a second conductive layer formed on the non-single-crystal semiconductor layer laminate member and serving as a second electrode; wherein the non-single-crystal semiconductor layer laminate member consists of a p or n type first non-single-crystal semiconductor layer formed on the first conductive layer, an i-type second non-single-crystal semiconductor layer formed on the first non-single-crystal semiconductor layer, and a third non-single-crystal semiconductor layer having the same conductivity type as that of the first non-single-crystal semiconductor layer formed on the i-type second non-single-crystal semiconductor layer and wherein the i-type second semiconductor layer contains carbon, nitrogen or oxygen without influencing the conductivity type of the i-type semiconductor layer to thus symmetrically form said nin or pip junction.
Claim 9
Dependent Claim
170 words
A liquid crystal display panel comprising: a liquid crystal display device having a nonlinear semiconductor element and a liquid crystal element electrically connected in series with the nonlinear semiconductor element; wherein the nonlinear semiconductor element has a first conductive layer serving as a first electrode, a non-single-crystal semiconductor layer laminate member formed on the first electrode and a second conductive layer formed on the non-single-crystal semiconductor layer laminate member and serving as a second electrode; wherein the non-single-crystal semiconductor layer laminate member consists of a p or n type first non-single-crystal semiconductor layer formed on the first conductive layer, an i-type second non-single-crystal semiconductor layer formed on the first non-single-crystal semiconductor layer, and a third non-single-crystal semiconductor layer having the same conductivity type as that of the first non-single-crystal semiconductor layer formed on the i-type second non-single-crystal semiconductor layer and wherein the i-type second semiconductor layer contains carbon, nitrogen or oxygen without influencing the conductivity type of the i-type semiconductor layer to thus symmetrically form said nin or pip junction.
Claim 10
Dependent Claim
25 words
A liquid crystal display panel according to claim 5 wherein the i-type semiconductor layer of the nonlinear semiconductor element is intentionally doped with a boron.
Claim 11
Dependent Claim
32 words
An element as in claims 1, 3, 4 or 6 where the density of said boron in the i-layer is non-uniform in the direction normal to the first and third semiconductor layers.
Claim 12
Dependent Claim
33 words
An element as in claims 2 or 5 where the density of said carbon, nitrogen, or oxygen in the i-layer is non-uniform in the direction normal to the first and third semiconductor layers.
Claim 13
Dependent Claim
55 words
An element as in claims 1, 3, 4, or 6 where said i-type semiconductor layer is doped with said boron such that the density of the boron near the first semiconductor layer is higher than the density of the boron at a portion of the i-type layer midway between the first and third semiconductor layers.
Claim 14
Dependent Claim
60 words
An element as in claims 2 or 5 where said i-type semiconductor layer so contains said carbon, nitrogen, or oxygen that the density of the carbon, nitrogen, or oxygen near the first semiconductor layer is higher than the density of the carbon, nitrogen, or oxygen at a portion of the i-type layer midway between the first and third semiconductor layers.
Claim 15
Dependent Claim
40 words
An element as in claims 1 or 4, wherein the voltage-current characteristic of the nonlinear semiconductor element is substantially symmetric with respect to the origin of the voltage-current characteristic due to the presence of the boron in the i-type layer.
Claim 16
Dependent Claim
43 words
An element as in claims 2 or 5, wherein the voltage-current characteristic of the nonlinear semiconductor element is substantially symmetric with respect to the origin of the voltage-current characteristic due to the presence of the carbon, nitrogen, or oxygen in the i-type layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-08-07 | 1993-02-06 | 1993-08-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-08-07 | 1997-02-06 | 1997-08-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-08-07 | 2001-02-06 | 2001-08-08 | $7700.00 | Window Closed / Lapsed |