US4801555A
Expired / Lapsed
US
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Double-implant process for forming graded source/drain regions
Assignee: NXP USA Inc
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Filing: 1987-01-14
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Granted: 1989-01-31
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Expires: 2007-01-14
Abstract
Abstract A process for forming graded source/drain regions in semiconductor devices involves two ion implantation steps and an optional drive-in step. The first implantation is a low dose implant with high energy and/or low mass ions to form the deeper grading region. The second implant is a high does implant with low energy and/or high mass ions to form the shallower, lower resistivity source/drain region. Without the optional drive-in step, virtually no lateral grading takes place, resulting in little encroachment of the grading region under the gate. The use of a drive-in step between the two implant steps causes diffusion of the grading dopant, which increases the grading both laterally and vertically, resulting in better breakdown and capacitance characteristics, but increased encroachment under the gate. The present invention allows control over the lateral and vertical grading separately to optimize the trade-offs for a particular application.
Inventors
- 👤 Patrick J. Holly
- 👤 Louis C. Parrillo
- 👤 Frank K. Baker
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 01:40
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/21; H10P30/202; H10P30/204; H10P30/225; Y; Y10; Y10S; Y10S148/00; Y10S148/082; Y10S148/083
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
112 words
A method of forming a graded P-type source/drain semiconductor region within an N-type semiconductor region comprising the steps of: performing a first ion implantation step at a relatively lower dose and using one of a relatively higher energy and a relatively less massive ion, said first ion implantation step introduces a P-type dopant into said N-type semiconductor region; and performing a second ion implantation step, without performing any intervening patterning steps between said first and second ion implantation steps, at a relatively higher dose and using one of a relatively lower energy and a relatively more massive ion, said second ion implantation step introduces a P-type dopant into said N-type semiconductor region.
Claim 2
Independent Claim
112 words
A method of forming a graded P-type source/drain semiconductor region within an N-type semiconductor region comprising the steps of: performing a first ion implantation step at a relatively lower dose and using one of a relatively higher energy and a relatively less massive ion, said first ion implantation step introduces a P-type dopant into said N-type semiconductor region; and performing a second ion implantation step, without performing any intervening patterning steps between said first and second ion implantation steps, at a relatively higher dose and using one of a relatively lower energy and a relatively more massive ion, said second ion implantation step introduces a P-type dopant into said N-type semiconductor region.
Claim 3
Dependent Claim
31 words
A method according to claim 1 further comprising the step of: performing a grading drive-in step subsequent to said first ion implantation step and prior to said second ion implantation step.
Claim 4
Independent Claim
133 words
A method of forming a graded P-type source/drain semiconductor region within an N-type semiconductor region comprising the steps of: performing a first ion implantation step at a relatively lower dose and using one of a relatively higher energy and a relatively less massive ion, said first ion implantation step introduces a P-type dopant into said N-type semiconductor region; optionally performing a grading drive-in step subsequent to said first ion implantation step and prior to a second ion implantation step; and performing a second ion implantation step, without performing any intervening patterning steps between said first and second ion implantation steps, at a relatively higher dose and using one of a relatively lower energy and a relatively more massive ion, said second ion implantation step introduces a P-type dopant into said N-type semiconductor region.
Claim 5
Independent Claim
133 words
A method of forming a graded P-type source/drain semiconductor region within an N-type semiconductor region comprising the steps of: performing a first ion implantation step at a relatively lower dose and using one of a relatively higher energy and a relatively less massive ion, said first ion implantation step introduces a P-type dopant into said N-type semiconductor region; optionally performing a grading drive-in step subsequent to said first ion implantation step and prior to a second ion implantation step; and performing a second ion implantation step, without performing any intervening patterning steps between said first and second ion implantation steps, at a relatively higher dose and using one of a relatively lower energy and a relatively more massive ion, said second ion implantation step introduces a P-type dopant into said N-type semiconductor region.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1992-01-31 | 1992-08-01 | 1993-01-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1996-01-31 | 1996-08-01 | 1997-01-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2000-01-31 | 2000-08-01 | 2001-01-31 | $7700.00 | Window Closed / Lapsed |