Patent US4756793A successfully refreshed from Google Patents.
US4756793A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a semiconductor device
Assignee: US Philips Corp
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Filing: 1986-09-24
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Granted: 1988-07-12
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Expires: 2006-09-24
Abstract
Abstract A method of manufacturing a semiconductor device having at least one narrow and comparatively deep groove (3) in the semiconductor surface, while zones (9) are implanted in the walls and/or the bottom of the groove over only part of the groove length. According to the invention, the implantation mask is provided on a filler material (6), which fills the groove and is removed after the masking layer (7) has been provided. The filler material preferably consists of a photo-resist.
Inventors
- 👤 Hermanus L. Peek
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 05:29
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/222; H10P76/00; H10P76/40; H10P76/408; H10P76/4085
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
163 words
A method of manufacturing a semiconductor device comprising the steps of etching at least one groove having a length dimension, a width dimension and a depth dimension into a surface of a semiconductor substrate region, filling said at least one groove upto said surface with a filler material, forming a masking layer over said entire surface of said semiconductor substrate region, said masking layer being located on said filler material at said at least one groove, forming at least one opening in said masking layer at least above said at least one groove to form an implantation mask, said at least one opening being provided over only a part of a length dimension of said at least one groove on said substrate, removing said filler material from said at least one groove through said at least one opening, said step of removing being carried out by dissolving, carrying out ion implantation through said at least one opening, and thereafter removing said implantation mask.
Claim 2
Independent Claim
163 words
A method of manufacturing a semiconductor device comprising the steps of etching at least one groove having a length dimension, a width dimension and a depth dimension into a surface of a semiconductor substrate region, filling said at least one groove upto said surface with a filler material, forming a masking layer over said entire surface of said semiconductor substrate region, said masking layer being located on said filler material at said at least one groove, forming at least one opening in said masking layer at least above said at least one groove to form an implantation mask, said at least one opening being provided over only a part of a length dimension of said at least one groove on said substrate, removing said filler material from said at least one groove through said at least one opening, said step of removing being carried out by dissolving, carrying out ion implantation through said at least one opening, and thereafter removing said implantation mask.
Claim 3
Dependent Claim
13 words
A method according to claim 1, wherein said filler material is a photoresist.
Claim 4
Dependent Claim
17 words
A method according to claim 1 or claim 2, wherein said masking layer is a metal layer.
Claim 5
Dependent Claim
13 words
A method according to claim 3, wherein said metal layer is of aluminum.
Claim 6
Dependent Claim
38 words
A method according to claim 1, further comprising providing said surface of said substrate region with an isolating layer extending to walls of said at least one groove, wherein said masking layer is formed on said isolating layer.
Claim 7
Dependent Claim
24 words
A method according to claim 5, wherein said isolating layer masks said ion implantation in a direction transverse to said at least one groove.
Claim 8
Dependent Claim
27 words
A method according to claim 1, wherein said at least one groove is formed with said width dimension being at most equal to half said depth dimension.
Claim 9
Dependent Claim
24 words
A method according to claim 1 or claim 7, wherein said at least one groove has a depth dimension of at least 3 μm.
Claim 10
Dependent Claim
45 words
A method according to claim 1, wherein said step of carrying out ion implantation takes place at an angle of less than 90° to said surface, said ion implantation then occurring at least in part on a side wall of said at least one groove.
Claim 11
Dependent Claim
38 words
A method according to claim 1, further comprising covering said at least one groove having groove walls and a groove bottom with a thin oxide layer, wherein said ion implantation is carried out through said thin oxide layer.
Claim 12
Dependent Claim
48 words
A method according to claim 1, wherein said step of filling said at least one groove is carried out by first forming an isolation layer on groove walls and a groove bottom of said at least one groove, and thereafter filling said at least one groove with silicon.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-07-12 | 1992-01-11 | 1992-07-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-07-12 | 1996-01-11 | 1996-07-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-07-12 | 2000-01-11 | 2000-07-12 | $7700.00 | Window Closed / Lapsed |