US4636281A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for the autopositioning of a local field oxide with respect to an insulating trench
Assignee: Commissariat à l'Énergie Atomique et Aux Énergies Alternatives
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Filing: 1985-06-13
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Granted: 1987-01-13
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Expires: 2005-06-13
Abstract
Abstract Process for the autopositioning of a local field oxide relative to an insulating trench. This process consists of forming at least one first insulating coating on a silicon substrate, producing a second insulating coating on the first coating, anisotropically etching the first and second coating until the region of the substrate in which the trench is to be formed is exposed, forming insulating spacers on the etched flanks of the first and second coatings, anisotropically etching the substrate region in order to form the trench, the second etched coating and the spacers used as a mask for said etching, eliminating the mask, forming the insulating edges in the trench, filling said trench with a material and forming the field oxide.
Inventors
- 👤 Francois Buiguez
- 👤 Joel Hartmann
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 17:39
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/041; H10W10/40; Y; Y10; Y10S; Y10S148/00; Y10S148/05
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
182 words
A process for self-positioning a local field oxide with respect to an insulating trench formed in a silicon substrate, comprising the successive steps of: (a) forming at least one first insulating material coating on the substrate surface; (b) forming a second insulating material coating on said first coating; (c) anisotropically etching the first and second insulating material coatings until the region of the substrate in which the trench is to be formed is exposed; (d) forming insulating spacers on the etched flanks of the first and second insulating material coatings; (e) anisotropically said region of the substrate in order to produce the trench, the second etched insulating material coating and the spacers acting as a mask for said etching; (f) eliminating the second etched insulating material coating and the spacers; (g) forming insulating edges in the trench; (h) filling the trench with a polycrystalline silicon; (i) producing the local field oxide with a thermal oxidation of said polycrystalline silicon, the first etched insulating material coating acting as a mask for said thermal oxidation; and (j) eliminating the first etched insulating material coating.
Claim 2
Dependent Claim
182 words
A process for self-positioning a local field oxide with respect to an insulating trench formed in a silicon substrate, comprising the successive steps of: (a) forming at least one first insulating material coating on the substrate surface; (b) forming a second insulating material coating on said first coating; (c) anisotropically etching the first and second insulating material coatings until the region of the substrate in which the trench is to be formed is exposed; (d) forming insulating spacers on the etched flanks of the first and second insulating material coatings; (e) anisotropically said region of the substrate in order to produce the trench, the second etched insulating material coating and the spacers acting as a mask for said etching; (f) eliminating the second etched insulating material coating and the spacers; (g) forming insulating edges in the trench; (h) filling the trench with a polycrystalline silicon; (i) producing the local field oxide with a thermal oxidation of said polycrystalline silicon, the first etched insulating material coating acting as a mask for said thermal oxidation; and (j) eliminating the first etched insulating material coating.
Claim 3
Dependent Claim
27 words
A process according to claim 1, wherein a silicon oxide coating is formed on the substrate surface, followed by a silicon nitride coating on the first coating.
Claim 4
Dependent Claim
19 words
A process according to claim 2, wherein the silicon oxide coating is formed by thermal oxidation of the substrate.
Claim 5
Dependent Claim
15 words
A process according to claim 2, wherein the silicon nitride coating is formed by deposition.
Claim 6
Dependent Claim
17 words
A process according to claim 1, wherein the second insulating material coating is formed from silicon oxide.
Claim 7
Dependent Claim
16 words
A process according to claim 1, wherein the second insulating material coating is formed by deposition.
Claim 8
Dependent Claim
34 words
A process according to claim 1, wherein, between stages (b) and (c), is formed a resin mask on the second insulating material coating and which is used for defining the location of the trench.
Claim 9
Dependent Claim
25 words
A process according to claim 7, wherein the resin mask has an opening having a greater width than that of the trench to be formed.
Claim 10
Dependent Claim
17 words
A process according to claim 7, wherein the resin mask is eliminated between stages (c) and (d).
Claim 11
Dependent Claim
32 words
A process according to claim 1, wherein insulating spacers are formed by depositing a third insulating coating on the second etched insulating material coating and then by anisotropically etching said third coating.
Claim 12
Dependent Claim
14 words
A process according to claim 1, wherein the spacers are made from silicon oxide.
Claim 13
Dependent Claim
22 words
A process according to claim 1, wherein the insulating edges of the trench are formed by thermal oxidation of the etched substrate.
Claim 14
Dependent Claim
14 words
A process according to claim 1, wherein the trench is filled by isotropic deposition.
Claim 15
Dependent Claim
23 words
A process according to claim 13, wherein the excess polycrystalline silicon inside the trench is eliminated, so as to obtain a planar surface.
Claim 16
Dependent Claim
39 words
A process according to claim 1, wherein, between stages (d) and (e), there is a slight isotropic etching of the exposed substrate region, the second etched insulating material coating and the spacers used as a mask for said etching.
Claim 17
Dependent Claim
34 words
A process according to claim 7, wherein spacers are formed in the etched flanks of the first and second insulating material coatings, as well as on the etched flanks of the exposed substrate region.
Claim 18
Dependent Claim
27 words
A process according to claim 7, wherein, between stages (c) and (d), there is a slight anisotropic etching of the exposed substrate region through the resin mask.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-01-12 | 1990-07-14 | 1991-01-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-01-12 | 1994-07-14 | 1995-01-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-01-12 | 1998-07-14 | 1999-01-13 | $7700.00 | Window Closed / Lapsed |