EP0096596A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Microelectronic device manufacture
Assignee: NEC Corp
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Filing: 1983-06-08
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Granted: —
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Expires: 2003-06-08
Abstract
Abstract A method of forming fine patterns in the manufacture of microelectronic devices by using optical or electron-beam lithography and a dry etching technique such as reactive sputter etching with oxygen. The substrate surface is covered with a relatively thick organic layer, and a thin resist film is formed thereon. The material of the resist layer is a polymer or copolymer comprising trialkylsilyl group, dimethylphenylsilyl group or trialkoxysilyl group. The thickness of the resist film is so adjusted as to contain a sufficient number of trialkylsilyl, dimethylphenylsilyl or trialkoxysilyl groups per unit area of the resist pattern to thereby ensure high endurance of the resist to dry etching for etching the thick organic layer.
Inventors
- 👤 Masayoshi Suzuki
- 👤 Kazuhide Saigo
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 20:19
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/286; H10P50/287; C; C08; C08G; C08G8/00; C08G8/28; G; G03; G03F; G03F7/00; G03F7/004; G03F7/075; G03F7/0757; G03F7/0758; G03F7/09; G03F7/094; H10P14/00; H10P14/60; H10P14/66; H10P14/668; H10P14/6681; H10P50/73
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
105 words
A method of forming a pattern in the manufacture of microelectronic devices, the method comprising the steps of forming on an etchable substrate an organic polymer layer which can be etched by dry etching; forming on the organic polymer layer a resist film comprising a polymer having at least one substituted silyl group selected from trialkylsilyl-, dimethylphenylsilyl-and trialkoxysilyl groups; forming a desired pattern in the resist film by a lithographic technique; etching the organic polymer layer by a dry etching technique with the patterned resist film as a mask; and etching the substrate with the unetched areas of the organic polymer layer as a mask.
Claim 2
Independent Claim
105 words
A method of forming a pattern in the manufacture of microelectronic devices, the method comprising the steps of forming on an etchable substrate an organic polymer layer which can be etched by dry etching; forming on the organic polymer layer a resist film comprising a polymer having at least one substituted silyl group selected from trialkylsilyl-, dimethylphenylsilyl-and trialkoxysilyl groups; forming a desired pattern in the resist film by a lithographic technique; etching the organic polymer layer by a dry etching technique with the patterned resist film as a mask; and etching the substrate with the unetched areas of the organic polymer layer as a mask.
Claim 3
Dependent Claim
19 words
A method according to Claim 1 wherein the resist film comprises poly(trialkylsilylstyrene), prefereably selected from poly(trimethylsilylstyrene) and poly (triethylsilylstyrene).
Claim 4
Dependent Claim
37 words
A method according to Claim 1 wherein the resist film comprises copolymer of trialkysilylstyrene (e.g. trimethylsilylstyrene) with ethylenic unsaturated monomer not having a substituted silyl group, the unsaturated monomer preferably being selected from chloromethylstyrene and glycidyl methacrylate.
Claim 5
Dependent Claim
23 words
A method according to Claim 1 wherein the resist film comprises copolymer of trimethylallylsilane with monomer selected from diallyl phthalate and diallyl terephthalate.
Claim 6
Dependent Claim
16 words
A method according to Claim 1 wherein the resist film comprises novolak type trimethylsilyl-substituted phenolic resin.
Claim 7
Dependent Claim
37 words
A method according to Claim 1 wherein the resist film comprises poly (2-trimethylsiloxyethyl methacrylate or copolymer of 2-trimethylsiloxyethyl methacrylate with ethylenic unsaturated monomer not having a substituted silyl group, the ethylenic unsaturated monomer preferably comprising methyl methacrylate.
Claim 8
Dependent Claim
27 words
7, A method according to Claim 1 wherein the resist film comprises poly(dimethylphenylsilylstyrene) or copolymer of dimethylphenylsilylstyrene with ethylenic unsaturated monomer not having a substituted silyl group.
Claim 9
Dependent Claim
34 words
s. A method according to Claim 1 wherein the resist film comprises copolymer of 3-trimethoxysilylpropyl methacrylate with ethylenic unsaturated monomer not having a substituted silyl group, the ethylenic unsaturated monomer preferably comprising glycidyl methacrylate.
Claim 10
Independent Claim
19 words
A method according to any preceding Claim wherein the dry etching technique is reactive sputter etching using oxygen gas.
Claim 11
Independent Claim
28 words
A method according to any preceding Claim wherein the number of said substituted silyl groups in the patterned resist film is at least 10 16 /cm 2 .
References Cited (Backward Citations)
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