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US4755748A
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Method and apparatus for analyzing semiconductor devices using charge-sensitive electron-beam-injected-carrier microscopy
Assignee: Iconectiv LLC
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Filing: 1985-06-05
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Granted: 1988-07-05
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Expires: 2005-06-05
Abstract
Abstract In order to determine whether defects are present in a semiconductor device (103) biased to its normal operating levels, a scanning electron microscope (101) equipped with an electron beam blanker (102) scans the device with a pulsed electron beam. Charge carriers generated within the device in response to each pulse of electrons are collected and amplified by a charge carrier sensitive preamplifier (114) to produce a voltage signal which when applied to a CRT (118) produces an image of the semiconductor. Defects in the device can be located from irregularities in the image and the presence of bias dependent defects can be ascertained by varying the bias current supplied (113) to the device and noting changes in the image.
Inventors
- 👤 Paul S. D. Lin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 20:03
CPC Classifications
G; G01; G01R; G01R31/00; G01R31/28; G01R31/302; G01R31/305
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
95 words
A method for detecting defects in a semiconductor device comprising the steps of: biasing the semiconductor with a variable bias current, scanning the biased device with an electron beam that is pulsed on and off at each spatial point on the surface of the device, collecting charge carriers generated in the device in response to each pulse at each spatial point to a substantially proportional voltage, forming an image of the device from the voltage levels associated with each spatial point, and analyzing said image for irregularities to determine and locate defects in the device.
Claim 2
Independent Claim
95 words
A method for detecting defects in a semiconductor device comprising the steps of: biasing the semiconductor with a variable bias current, scanning the biased device with an electron beam that is pulsed on and off at each spatial point on the surface of the device, collecting charge carriers generated in the device in response to each pulse at each spatial point to a substantially proportional voltage, forming an image of the device from the voltage levels associated with each spatial point, and analyzing said image for irregularities to determine and locate defects in the device.
Claim 3
Dependent Claim
126 words
Apparatus for detecting defects in a semiconductor device scanned by an electron beam of a scanning electron microscope, the microscope being equipped with an electron beam blanker comprising: means for biasing the semiconductor with a variable bias current, pulsing means for pulsing the electron beam on and off at a predetermined rate as the beam scans each spatial point on the surface of the device, means for collecting charge carriers generated in the device in response to each pulse of the pulsed electron beam, means for converting the number of charge carriers collected in response to each pulse at each spatial point to a substantially proportional voltage level, and means for generating an image of the device from the voltage levels associated with each spatial point.
Claim 4
Dependent Claim
126 words
Apparatus for detecting defects in a semiconductor device scanned by an electron beam of a scanning electron microscope, the microscope being equipped with an electron beam blanker comprising: means for biasing the semiconductor with a variable bias current, pulsing means for pulsing the electron beam on and off at a predetermined rate as the beam scans each spatial point on the surface of the device, means for collecting charge carriers generated in the device in response to each pulse of the pulsed electron beam, means for converting the number of charge carriers collected in response to each pulse at each spatial point to a substantially proportional voltage level, and means for generating an image of the device from the voltage levels associated with each spatial point.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-07-05 | 1992-01-04 | 1992-07-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-07-05 | 1996-01-04 | 1996-07-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-07-05 | 2000-01-04 | 2000-07-05 | $7700.00 | Window Closed / Lapsed |