US4464627A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Device for measuring semiconductor characteristics
Assignee: Hitachi Ltd
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Filing: 1981-05-01
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Granted: 1984-08-07
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Expires: 2001-05-01
Abstract
Abstract A device for measuring semiconductor characteristics, wherein electrodes are installed maintaining a gap on the front and back sides of a semiconductor specimen of which the characteristics are to be measured, at least one of the electrodes being transparent, the surface of the semiconductor specimen is scanned with a pulsed narrow photon beam via the transparent electrode, and a photovoltage generated between the front and back surfaces of the semiconductor specimen is taken out from the two electrodes via the capacitive coupling, in order to observe the distribution of characteristics in the surface of the semiconductor specimen.
Inventors
- 👤 Chusuke Munakata
- 👤 Kunihiro Yagi
- 👤 Teruaki Motooka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 16:37
CPC Classifications
G; G01; G01R; G01R31/00; G01R31/26; G01R31/265; G01R31/2656
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
166 words
A device for measuring semiconductor characteristics comprising: photon beam irradiation means which scans and irradiates the surface of a semiconductor specimen with a pulsed and converged photon beam; electrodes respectively disposed opposite front and back surfaces of said specimen with a capacitive coupling gap being located between each electrode and the respective opposite surface of the specimen, through which photovoltage generated between the front surface and the back surface of said specimen by the irradiation with said photon beam is taken out by said electrodes, at least one of said electrodes located on the side irradiated with the said photon beam being capable of transmitting light; signal extract means for taking out only the signal components of said photovoltage by comparing the output signals taken out by said electrodes with pulsed signals and said photon beam; and observation means which displays said signal components relative to irradiated portions of said photon beam, so that changes in the output from said signal extract means can be observed.
Claim 2
Independent Claim
166 words
A device for measuring semiconductor characteristics comprising: photon beam irradiation means which scans and irradiates the surface of a semiconductor specimen with a pulsed and converged photon beam; electrodes respectively disposed opposite front and back surfaces of said specimen with a capacitive coupling gap being located between each electrode and the respective opposite surface of the specimen, through which photovoltage generated between the front surface and the back surface of said specimen by the irradiation with said photon beam is taken out by said electrodes, at least one of said electrodes located on the side irradiated with the said photon beam being capable of transmitting light; signal extract means for taking out only the signal components of said photovoltage by comparing the output signals taken out by said electrodes with pulsed signals and said photon beam; and observation means which displays said signal components relative to irradiated portions of said photon beam, so that changes in the output from said signal extract means can be observed.
Claim 3
Dependent Claim
68 words
A device for measuring semiconductor characteristics according to claim 1, wherein said photon beam irradiation means consists of a cathode-ray tube, a pulse source connected to said cathode-ray tube to modulate the brightness, a scanning source connected to a deflection coil of said cathode-ray tube to effect the deflection, and an optical lens which is disposed between said cathode-ray tube and said specimen to converge the photon beam.
Claim 4
Dependent Claim
32 words
A device for measuring semiconductor characteristics according to claim 2, wherein an optical filter is installed between said cathode-ray tube and said optical lens to trim the wavelengths of said photon beam.
Claim 5
Dependent Claim
30 words
A device for measuring semiconductor characteristics according to claim 1, wherein said electrodes are supported on said specimen via spacers in the form of a light-transmitting and electrically insulating plate.
Claim 6
Dependent Claim
19 words
A device for measuring semiconductor characteristics according to claim 1, wherein said signal extract means is a phase-sensitive demodulator.
Claim 7
Dependent Claim
25 words
A device for measuring semiconductor characteristics according to claim 1, wherein said observation means is a cathode-ray tube which is brightness-modulated by said signal components.
Claim 8
Dependent Claim
25 words
A device for measuring semiconductor characteristics according to claim 1, wherein said observation means is a cathode-ray tube which is amplitude-modulated by said signal components.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-08-07 | 1988-02-06 | 1988-08-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-08-07 | 1992-02-06 | 1992-08-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-08-07 | 1996-02-06 | 1996-08-07 | $7700.00 | Window Closed / Lapsed |