US4051437A
Expired / Lapsed
US
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Method and apparatus for semiconductor profiling using an optical probe
Assignee: United States Department of the Navy
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Filing: 1976-04-02
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Granted: 1977-09-27
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Expires: 1996-04-02
Abstract
Abstract A method and apparatus of determining defects in semiconductors, by scann with small spot of light. As the semiconductor is scanned, a voltage is generated which may be used to indicate gross defects as well as the reduction in carrier lifetime due to the defects.
Inventors
- 👤 Derek L. Lile
- 👤 Neil M. Davis
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 17:37
CPC Classifications
G; G01; G01R; G01R31/00; G01R31/26; G01R31/265; G01R31/2656; Y; Y10; Y10S; Y10S136/00; Y10S136/29
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
81 words
A method of semiconductor profiling, the steps of a. forming a light beam having a diameter of less than 100μm, b. positioning a semiconductor sample of the type which generates a signal voltage in response to optical excitation in an electrolytic solution, c. scanning said light beams over said sample in a raster format; d. utilizing the signal voltages generated by said sample in response to being scanned by said light beam to determine the presence of anomalities in said sample.
Claim 2
Independent Claim
81 words
A method of semiconductor profiling, the steps of a. forming a light beam having a diameter of less than 100μm, b. positioning a semiconductor sample of the type which generates a signal voltage in response to optical excitation in an electrolytic solution, c. scanning said light beams over said sample in a raster format; d. utilizing the signal voltages generated by said sample in response to being scanned by said light beam to determine the presence of anomalities in said sample.
Claim 3
Dependent Claim
27 words
The method of claim 1 further comprising the step of quantizing the generated signals for use in determining the recombination lifetime of carriers in the semiconductor sample.
Claim 4
Dependent Claim
28 words
The method of claim 1 further comprising the step of graphically displaying the generated signals to visually observe any anomalies that may be present in said semiconductor sample.
Claim 5
Independent Claim
75 words
An apparatus for profiling semiconductors to determine their homogeneity comprising: a. means for holding the semiconductor sample of interest in an electrolytic solution, b. a light beam source having a diameter of less than 100μm, c. electro-optical deflection means for focusing and causing said light beam to scan said sample in a raster format; d. signal processing circuit means coupled to said sample for providing output signals proportional to the homogeneity profile of said sample.
Claim 6
Independent Claim
75 words
An apparatus for profiling semiconductors to determine their homogeneity comprising: a. means for holding the semiconductor sample of interest in an electrolytic solution, b. a light beam source having a diameter of less than 100μm, c. electro-optical deflection means for focusing and causing said light beam to scan said sample in a raster format; d. signal processing circuit means coupled to said sample for providing output signals proportional to the homogeneity profile of said sample.
Claim 7
Dependent Claim
41 words
The apparatus of claim 4 wherein said electrolytic means includes a container sufficiently filled with an electrolyte in which said sample can be submerged, said container having a transparent area through which said light beam may pass to scan said sample.
Claim 8
Dependent Claim
19 words
The apparatus of claim 4 wherein said signal processing means provides output signals for graphically displaying the homogeneity profile.
Claim 9
Dependent Claim
25 words
The apparatus of claim 4 wherein said signal processing means provides quantitative output signals for determining the recombination lifetime of the carriers in said semiconductor.
Claim 10
Dependent Claim
24 words
The apparatus of claim 4 wherein the electrolyte of said electrolytic means is 1% by weight aqueous solution of Na 2 SO 4 .
Claim 11
Dependent Claim
19 words
The apparatus of claim 5 wherein said signal processing means provides output signals for graphically displaying the homogeneity profile.
Claim 12
Dependent Claim
25 words
The apparatus of claim 9 wherein said signal processing means provides quantitative output signals for determining the recombination lifetime of the carriers in said semiconductor.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-09-26 | 1981-03-28 | 1981-09-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-09-26 | 1985-03-28 | 1985-09-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-09-26 | 1989-03-28 | 1989-09-27 | $7700.00 | Window Closed / Lapsed |