US4643777A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a semiconductor device comprising resistors of high and low resistances
Assignee: Toshiba Corp
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Filing: 1984-12-19
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Granted: 1987-02-17
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Expires: 2004-12-19
Abstract
Abstract There is disclosed a method of manufacturing a semiconductor device comprising the steps of forming a polysilicon film on a semiconductor substrate through an oxidation film, forming a mask of a predetermined pattern on the polysilicon film, forming a molybdenum film on the polysilicon film, and silicifying those regions of said molybdenum film not covered by the mask so that a structure of the uncovered molybdenum film regions and those regions of the polysilicon film located under the uncovered molybdenum regions have low resistance, while a region of the molybdenum film covered by the mask has high resistance.
Inventors
- 👤 Takeo Maeda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 06:04
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/47; H10D1/474; Y; Y10; Y10S; Y10S148/00; Y10S148/035; Y10S148/105; Y10S148/147
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
104 words
A method of manufacturing a semiconductor device comprising: a step of forming a film of a high resistance containing silicon on a semiconductor substrate; a step of forming a mask of a predetermined pattern on said silicon containing film; a step of forming a metal film on said silicon containing film; and a step of silicifying said metal film so that a structure of said metal film and that region of said silicon containing film which is adjacent to said metal film has a low resistance, while that region of said silicon containing film which is adjacent to said mask has a high resistance.
Claim 2
Independent Claim
104 words
A method of manufacturing a semiconductor device comprising: a step of forming a film of a high resistance containing silicon on a semiconductor substrate; a step of forming a mask of a predetermined pattern on said silicon containing film; a step of forming a metal film on said silicon containing film; and a step of silicifying said metal film so that a structure of said metal film and that region of said silicon containing film which is adjacent to said metal film has a low resistance, while that region of said silicon containing film which is adjacent to said mask has a high resistance.
Claim 3
Dependent Claim
25 words
A manufacturing method according to claim 1, wherein said silicon containing film is formed over said substrate through an insulation film formed on said substrate.
Claim 4
Dependent Claim
27 words
A manufacturing method according to claim 1, which further comprises, following said mask forming step, a step of implanting an impurity ion into said silicon containing film.
Claim 5
Dependent Claim
32 words
A manufacturing method according to claim 1, which further comprises, following said metal film forming step, a step of implanting an impurity ion into said silicon containing film through said metal film.
Claim 6
Dependent Claim
30 words
A manufacturing method according to claim 1, which further comprises, following said silicifying step, a step of implanting an impurity ion into said silicon containing film through said metal film.
Claim 7
Dependent Claim
28 words
A manufacturing method according to claim 1, which further comprises, following said mask forming step, a step of thermally diffusing an impurity ion into said silicon containing film.
Claim 8
Dependent Claim
33 words
A manufacturing method according to claim 1, which further comprises, following said metal film forming step, a step of thermally diffusing an impurity ion into said silicon containing film through said metal film.
Claim 9
Dependent Claim
31 words
A manufacturing method according to claim 1, which further comprises, following said silicifying step, a step of thermally diffusing an impurity ion into said silicon containing film through said metal film.
Claim 10
Dependent Claim
16 words
A manufacturing method according to claim 1, wherein said silicon containing film is a polysilicon film.
Claim 11
Dependent Claim
17 words
A manufacturing method according to claim 1, wherein said silicon containing film is an amorphous silicon film.
Claim 12
Dependent Claim
18 words
A manufacturing method according to claim 1, wherein said silicon containing film is a single crystal silicon film.
Claim 13
Dependent Claim
26 words
A manufacturing method according to claim 1, wherein said metal film is made of one selected from molybdenum, titanium, tantalum, tungsten, platinum, palladium, cobalt and aluminum.
References Cited (Backward Citations)
US3484308A
Cited
US3566518A
Cited
US3775192A
Cited
US3909319A
Cited
US3777364A
Cited
US4290187A
Cited
US3918149A
Cited
US4025364A
Cited
US4080719A
Cited
US3976512A
Cited
US4173063A
Cited
JPS5367361A
Cited
US4297782A
Cited
US4080718A
Cited
US4141022A
Cited
US4224733A
Cited
JPS55151334A
Cited
US4376658A
Cited
US4285761A
Cited
US4362597A
Cited
JPS5877253A
Cited
US4451328A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-02-16 | 1990-08-18 | 1991-02-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-02-16 | 1994-08-18 | 1995-02-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-02-16 | 1998-08-18 | 1999-02-17 | $7700.00 | Window Closed / Lapsed |