JPS5367361A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1976-11-27
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Granted: —
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Expires: 1996-11-27
Abstract
Abstract PURPOSE: To prevent effectively the surface inversion of the field region of the semiconductor device which has an insulating film, having metallic atoms introduced in its surface or inside through an ion-recoiling injection, in the field region and contains a field effect transistor. COPYRIGHT: (C)1978,JPO&Japio
Inventors
- 👤 Takashi Ito
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-31 13:17
CPC Classifications
—
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