Ion implantation method

Claim 2

A process for implanting ions into a semiconductor body comprising the steps of: forming an insulating layer on said body, forming a conductive layer covering said insulating layer, forming a first mask on said conductive layer to define a first region, supporting said body by supporting means in an ion implantation apparatus with said conductive layer in electrical contact with said supporting means, said supporting means connected to conduct current from said conductive layer, implanting a first type of ions through said insulating layer and said conductive layer into said body in said first region with said conductive layer functioning to conduct ion-generated current to said supporting means and thereby to reduce the build-up of a voltage across the insulating layer, forming a second mask on said conductive layer to define a second region, supporting said body by supporting means in an ion implantation apparatus with said conductive layer in electrical contact with said supporting means, said supporting means connected to conduct current from said conductive layer, implanting a second type of ions through said insulating layer and said conductive layer into said body in said second region with said conductive layer functioning to conduct ion-generated current to said supporting means and thereby to reduce the build-up of a voltage across the insulating layer, processing said conductive layer after said step of implanting a second type of ions to cause at least portions of said conductive layer to be nonconducting.

Claim 3

The process of claim 1 including, after said step of forming an insulating layer, the step of forming a conductive electrode having a limited area on said insulating layer and wherein said step of forming a first mask is performed to include said limited area within said first region.

Claim 4

In a process for manufacturing an insulatedgate field-effect semiconductor device, the steps of: forming a number of openings in a thick insulating layer on an N-type semiconductor body to define a number of discrete regions, one at each opening, forming a silicon dioxide thin insulating layer with a thickness of up to approximately 500 angstroms over each of said discrete regions, forming conductive electrodes on said thin insulating layer within a portion of each of said discrete regions, forming a thin conductive layer covering said thin insulating layer and in contact with each of said conductive electrodes, forming a first mask on said thin conductive layer exposing a first one of said regions above the N-type body, and portions of said conductive layer, supporting said body by supporting means in an ion implantation apparatus with said conductive layer in electrical contact with said supporting means, implanting a first type of ions through said insulating layer and said thin conductive layer into said body to form a source and drain for one device in said first one of said regions with said conductive layer functioning to reduce the build-up of a voltage across said thin insulating layer, forming a second mask on said conductive layer exposing a second one of said regions above one of said P-wells, supporting said body by supporting means in an ion implantation apparatus with said conductive layer in electrical contact with said supporting means, implanting a second type of ions through said insulating layer into said one of said P-wells to form a source and drain for another device in said second one of said regions with said conductive layer functioning to reduce the build-up of a voltage across said thin insulating layer, and removing said thin conductive layer.

Claim 5

In a process for manufacturing an insulatedgate field-effect semiconductor device, the steps of: forming a number of openings in a thick insulating layer on an N-type semiconductor body to define a number of discrete regions, one at each opening, forming a silicon dioxide thin insulating layer with a thickness of up to approximately 500 angstroms over each of said discrete regions, forming conductive electrodes on said thin insulating layer within a portion of each of said discrete regions, forming a thin conductive layer covering said thin insulating layer and in contact with each of said conductive electrodes, forming a first mask on said thin conductive layer exposing a first one of said regions above the N-type body, and portions of said conductive layer, supporting said body by supporting means in an ion implantation apparatus with said conductive layer in electrical contact with said supporting means, implanting a first type of ions through said insulating layer and said thin conductive layer into said body to form a source and drain for one device in said first one of said regions with said conductive layer functioning to reduce the build-up of a voltage across said thin insulating layer, forming a second mask on said conductive layer exposing a second one of said regions above one of said P-wells, supporting said body by supporting means in an ion implantation apparatus with said conductive layer in electrical contact with said supporting means, implanting a second type of ions through said insulating layer into said one of said P-wells to form a source and drain for another device in said second one of said regions with said conductive layer functioning to reduce the build-up of a voltage across said thin insulating layer, and removing said thin conductive layer.

Claim 6

The process of claim 3 including, after said step of implanting a second type of ions, a single step of annealing said semiconductor substrate to distribute and activate said source and drain ions of said one device and said another device.

Claim 7

In a process for manufacturing an insulated-gate field-effect device, the steps of: forming a relatively thick field insulating layer on a surface of a semiconductor substrate of one conductivity type, forming a relatively thin gate insulating layer at spaced surface regions of said semiconductor substrate, forming separated gate electrodes on said gate insulating layer, at least one of said gate electrodes being electrically floating, forming a thin conductive layer convering said surface of said semiconductor substrate, said conductive layer forming electrical contact with said gate electrodes, supporting said semiconductor substrate by supporting means in an ion implantation apparatus with said conductive layer in electrical contact with said supporting means, said supporting means connected to conduct current from said conductive layer, implanting impurity ions of opposite conductivity type to said one conductivity type through said conductive layer and said insulating layer into said semiconductor substrate to form source and drain regions of said insulated-gate field-effect device, and removing said conductive layer after said step of implanting impurity ions to remove said electrical contact with said gate electrodes.

Claim 8

In a process for manufacturing an insulated-gate field-effect device, the steps of: forming a relatively thick field insulating layer on a surface of a semiconductor substrate of one conductivity type, forming a relatively thin gate insulating layer at spaced surface regions of said semiconductor substrate, forming separated gate electrodes on said gate insulating layer, at least one of said gate electrodes being electrically floating, forming a thin conductive layer convering said surface of said semiconductor substrate, said conductive layer forming electrical contact with said gate electrodes, supporting said semiconductor substrate by supporting means in an ion implantation apparatus with said conductive layer in electrical contact with said supporting means, said supporting means connected to conduct current from said conductive layer, implanting impurity ions of opposite conductivity type to said one conductivity type through said conductive layer and said insulating layer into said semiconductor substrate to form source and drain regions of said insulated-gate field-effect device, and removing said conductive layer after said step of implanting impurity ions to remove said electrical contact with said gate electrodes.

Claim 9

In the process of claim 5 wherein said step of forming a relatively thin gate insulating layer produces an insulating layer with a thickness of up to approximately 500 angstroms.

Claim 10

In the process of claim 5 wherein said step of forming a thin conductive layer is performed to form said conductive layer as a polycrystalline semiconductor layer.

Claim 11

In a process for manufacturing an insulated-gate field-effect device, the steps of: forming a relatively thick field insulating layer on a surface of a semiconductor substrate of one conductivity type, forming a relatively thin gate insulating layer at spaced surface regions of said semiconductor substrate, forming separated gate electrodes on said gate insulating layer, at least one of said gate electrodes being electrically floating, forming a thin conductive layer covering said surface of said semiconductor substrate, said conductive layer forming electrical contact with said gate electrodes, supporting said semiconductor substrate by supporting means in an ion implantation apparatus with said conductive layer in electrical contact with said supporting means, said supporting means connected to conduct current from said conductive layer, implanting impurity ions of opposite conductivity type to said one conductivity type through said conductive layer and said insulating layer into said semiconductor substrate to form source and drain regions of said insulated-gate field-effect device, and processing said conductive layer to convert portions of said conductive layer between said gate electrodes into an insulating oxide layer.

Claim 12

In a process for manufacturing an insulated-gate field-effect device, the steps of: forming a relatively thick field insulating layer on a surface of a semiconductor substrate of one conductivity type, forming a relatively thin gate insulating layer at spaced surface regions of said semiconductor substrate, forming separated gate electrodes on said gate insulating layer, at least one of said gate electrodes being electrically floating, forming a thin conductive layer covering said surface of said semiconductor substrate, said conductive layer forming electrical contact with said gate electrodes, supporting said semiconductor substrate by supporting means in an ion implantation apparatus with said conductive layer in electrical contact with said supporting means, said supporting means connected to conduct current from said conductive layer, implanting impurity ions of opposite conductivity type to said one conductivity type through said conductive layer and said insulating layer into said semiconductor substrate to form source and drain regions of said insulated-gate field-effect device, and processing said conductive layer to convert portions of said conductive layer between said gate electrodes into an insulating oxide layer.

Claim 13

In the process of claim 8 wherein said step of processing said conductive layer is performed after said step of implanting impurity ions by annealing in an oxidizing atmosphere.

Claim 14

In a process for manufacturing an insulated-gate field-effect device, the steps of: forming a relatively thick field insulating layer on a surface of a semicondutor substrate of one conductivity type, said thick field insulating layer having openings to said surface in spaced regions, forming a relatively thin gate insulating layer on said surface in said regions, forming a first polycrystalline gate electrode layer over said surface in contact with said relatively thick field insulating layer and said thin insulating layer, forming separated second gate electrodes in said regions on said first gate electrode layer whereby said first gate electrode layer makes electrical contact among said second gate electrodes, supporting said semiconductor substrate by supporting means in an ion implantation apparatus with said first gate electrode layer in electrical contact with said supporting means, implanting impurity ions of opposite conductivity type to said one conductivitry type through said first gate electrode layer and said gate insulating layer to form source and drain regions of said insulated-gate field effect device, and removing said first gate electrode layer between said second gate electrodes to remove said electrical contact among said second gate electrodes.

Claim 15

In a process for manufacturing an insulated-gate field-effect device, the steps of: forming a relatively thick field insulating layer on a surface of a semicondutor substrate of one conductivity type, said thick field insulating layer having openings to said surface in spaced regions, forming a relatively thin gate insulating layer on said surface in said regions, forming a first polycrystalline gate electrode layer over said surface in contact with said relatively thick field insulating layer and said thin insulating layer, forming separated second gate electrodes in said regions on said first gate electrode layer whereby said first gate electrode layer makes electrical contact among said second gate electrodes, supporting said semiconductor substrate by supporting means in an ion implantation apparatus with said first gate electrode layer in electrical contact with said supporting means, implanting impurity ions of opposite conductivity type to said one conductivitry type through said first gate electrode layer and said gate insulating layer to form source and drain regions of said insulated-gate field effect device, and removing said first gate electrode layer between said second gate electrodes to remove said electrical contact among said second gate electrodes.

Claim 16

In the process of claim 10 wherein said step of forming a first gate electrode layer is performed to form said first gate electrode layer as a polycrystalline semiconductor layer.

Claim 17

In the process of claim 11 after the step of forming a first gate electrode layer as a polycrystalline layer, the step of processing said polycrystalline layer to increase the conductivity of the polycrystalline layer.

Claim 18

In the process of claim 11 wherein said step of forming second gate electrodes is performed to form said second gate electrodes as a refractory metal layer.

Claim 19

In a process for manufacturing an insulated-gate field-effect device, the steps of: forming a relatively thick field insulating layer on a surface of a semiconductor substrate of one conductivity type, said thick field insulating layer having openings to said surface in spaced regions, forming a relatively thin gate insulating layer on said surface in said regions, forming a first gate electrode layer over said surface in contact with said relatively thick field insulating layer and said thin insulating layer, forming separated second gate electrodes in said regions on said first gate electrode layer whereby said first gate electrode layer makes electrical contact among said second gate electrodes, supporting said semiconductor substrate by supporting means in an ion implantation apparatus with said first gate electrode layer in electrical contact with said supporting means, implanting impurity ions of opposite conductivity type to said one conductivitry type through said first gate electrode layer and said gate insulating layer to form source and drain regions of said insulated-gate field effect device, removing said first gate electrode layer between said second gate electrodes to remove said electrical contact among said second gate electrodes, and annealing said first gate electrode layer in an oxidizing atmosphere except in the regions under said second gate electrodes.

Claim 20

In a process for manufacturing an insulated-gate field-effect device, the steps of: forming a relatively thick field insulating layer on a surface of a semiconductor substrate of one conductivity type, said thick field insulating layer having openings to said surface in spaced regions, forming a relatively thin gate insulating layer on said surface in said regions, forming a first gate electrode layer over said surface in contact with said relatively thick field insulating layer and said thin insulating layer, forming separated second gate electrodes in said regions on said first gate electrode layer whereby said first gate electrode layer makes electrical contact among said second gate electrodes, supporting said semiconductor substrate by supporting means in an ion implantation apparatus with said first gate electrode layer in electrical contact with said supporting means, implanting impurity ions of opposite conductivity type to said one conductivitry type through said first gate electrode layer and said gate insulating layer to form source and drain regions of said insulated-gate field effect device, removing said first gate electrode layer between said second gate electrodes to remove said electrical contact among said second gate electrodes, and annealing said first gate electrode layer in an oxidizing atmosphere except in the regions under said second gate electrodes.

Claim 21

In a process for manufacturing an insulated-gate field-effect device, the steps of: forming a relatively thick field insulating layer on a surface of a semiconductor substrate of one conductivity type, said thick field insulating layer having openings to said surface in spaced regions, forming a relatively thin gate insulating layer on said surface in said regions, forming a first gate electrode layer over said surface in contact with said relatively thick field insulating layer and said thin insulating layer, and in electrical contact with said substrate in a location other than in said regions, forming separated second gate electrodes in said regions on said first gate electrode layer whereby said first gate electrode layer makes electrical contact among said second gate electrodes, supporting said semiconductor substrate by supporting means in an ion implantation apparatus with said first gate electrode layer in electrical contact with said supporting means, whereby said second gate electrodes and said substrate are all connected electrically in common, said supporting means electrically connected to conduct ion-generated current from said first gate electrode layer and said substrate, implanting impurity ions of opposite conductivity type to said one conductivitry type through said first gate electrode layer and said gate insulating layer to form source and drain regions of said insulated-gate field effect device, and removing said first gate electrode layer between said second gate electrodes to remove said electrical contact among said second gate electrodes and said electrical contact with said substrate.

Claim 22

In a process for manufacturing an insulated-gate field-effect device, the steps of: forming a relatively thick field insulating layer on a surface of a semiconductor substrate of one conductivity type, said thick field insulating layer having openings to said surface in spaced regions, forming a relatively thin gate insulating layer on said surface in said regions, forming a first gate electrode layer over said surface in contact with said relatively thick field insulating layer and said thin insulating layer, and in electrical contact with said substrate in a location other than in said regions, forming separated second gate electrodes in said regions on said first gate electrode layer whereby said first gate electrode layer makes electrical contact among said second gate electrodes, supporting said semiconductor substrate by supporting means in an ion implantation apparatus with said first gate electrode layer in electrical contact with said supporting means, whereby said second gate electrodes and said substrate are all connected electrically in common, said supporting means electrically connected to conduct ion-generated current from said first gate electrode layer and said substrate, implanting impurity ions of opposite conductivity type to said one conductivitry type through said first gate electrode layer and said gate insulating layer to form source and drain regions of said insulated-gate field effect device, and removing said first gate electrode layer between said second gate electrodes to remove said electrical contact among said second gate electrodes and said electrical contact with said substrate.