Patent US4591602A successfully refreshed from Google Patents.
US4402002A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Radiation hardened-self aligned CMOS and method of fabrication
Assignee: Intersil Corp
•
Filing: 1980-09-25
•
Granted: 1983-08-30
•
Expires: 2000-09-25
Abstract
Abstract A radiation hardened CMOS formed by applying a radiation hard gate oxide layer on a silicon substrate, applying silicon doped aluminum gates on the gate oxide, and by ion implanting and annealing source and drain regions using said gates as masks at a temperature of or below 500 degrees centigrade. Using an N - type substrate, a P + guard ring is formed at the interface of the P - well of the N channel MOS device and the N - substrate before the formation of the gate oxide.
Inventors
- 👤 Thomas J. Sanders
- 👤 William H. White
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 04:23
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/102; H10D62/112; H10D64/00; H10D64/60; H10D64/66; H10D64/665; H10D64/667; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0172; H10D84/0177; H10D84/0188; H10D84/02; H10D84/03; H10D84/038
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
127 words
A pair of CMOS devices having self-aligned gates comprising: a silicon substrate of a first conductivity type; a first region of a second conductivity type opposite said first impurity type formed in said substrate; a layer of a silicon oxide forming the gate oxide over a portion of said substrate and of said first region; a silicon doped aluminum gate on said silicon oxide layer over each of said portions; ion implanted source and drain region of said first impurity type in said first region having adjacent edges vertically aligned with the edges of its respective gate; and ion implanted source and drain regions of said second impurity type in said portion of said substrate having adjacent edges vertically aligned with the edges of its respective gate.
Claim 2
Dependent Claim
127 words
A pair of CMOS devices having self-aligned gates comprising: a silicon substrate of a first conductivity type; a first region of a second conductivity type opposite said first impurity type formed in said substrate; a layer of a silicon oxide forming the gate oxide over a portion of said substrate and of said first region; a silicon doped aluminum gate on said silicon oxide layer over each of said portions; ion implanted source and drain region of said first impurity type in said first region having adjacent edges vertically aligned with the edges of its respective gate; and ion implanted source and drain regions of said second impurity type in said portion of said substrate having adjacent edges vertically aligned with the edges of its respective gate.
Claim 3
Dependent Claim
23 words
The CMOS devices according to claim 1 wherein said gate is between one and three percent silicon and ninety-nine to ninety-seven percent aluminum.
Claim 4
Dependent Claim
48 words
The CMOS devices according to claim 1 wherein said substrate is N conductivity type and said first region is P conductivity type; and including a guard ring of P conductivity type at the surface interface of said substrate, guard ring having a greater impurity concentration than said substrate.
Claim 5
Dependent Claim
37 words
The CMOS devices, according to claim 1 including a second silicon oxide layer over said substrate and said gate and aluminum interconnects extending through apertures in said second silicon oxide layer to said source and drain regions.
References Cited (Backward Citations)
US3567509A
Cited
US3660735A
Cited
US3673471A
Cited
US4151635A
Cited
US3886583A
Cited
US3849216A
Cited
US3859716A
Cited
US4033797A
Cited
US3871067A
Cited
US3983620A
Cited
US4240093A
Cited
US4135955A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-08-29 | 1987-02-28 | 1987-08-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-08-29 | 1991-02-28 | 1991-08-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-08-29 | 1995-02-28 | 1995-08-30 | $7700.00 | Window Closed / Lapsed |