US3871067A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a semiconductor device
Assignee: International Business Machines Corp
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Filing: 1973-06-29
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Granted: 1975-03-18
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Expires: 1993-06-29
Abstract
Abstract Silicon ions are implanted in an aluminum or aluminum-copper film forming an electrode layer over a silicon dioxide layer on a semiconductor. The per cent by weight of silicon implanted into the metal film is greater than the per cent by weight of solid solubility of silicon in aluminum at the maximum processing temperature of the substrate that occurs after implantation. The peak of the implanted ion profile is preferably at the interface between the film and a silicon dioxide layer on the surface of the substrate.
Inventors
- 👤 E Hal Bogardus
- 👤 Peter P Peressini
- 👤 Timothy M Reith
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 08:36
CPC Classifications
H; H10; H10P; H10P95/00; H10D; H10D99/00; H10P32/00; H10P32/30; Y; Y10; Y10S; Y10S438/00; Y10S438/91
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
215 words
A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE HAVING A SUBSTRATE OF A SEMICONDUCTOR MATERIAL WITH AN INSULATING LAYER THEREON AND A METAL FILM OVERLYING THE INSULATING LAYER AND IN CONTACT WITH AT LEAST ONE PORTION OF THE SUBSTRATE TO FORM AN ELECTRODE LAYER INCLUDING THE STEPS OF IMPLANTING IONS OF THE SEMICONDUCTOR MATERIAL INTO THE METAL FILM TO FORM A CONCENTRATION PROFILE TO THE IMPLANTED IONS HAVING A PEAK, SELECTING THE MAXIMUM TEMPERATURE TO WHICH THE METAL FILM IS TO BE SUBJECTED DURING FURTHER PROCESSING, SELECTING THE DOSAGE OF THE IONS TO PRODUCE A PER CENT BY WEIGHT OF THE SEMICONDUCTOR MATERIAL IN ONE MATERIAL OF THE METAL FILM THAT IS GREATER THAN THE PER CENT BY WEIGHT OF SOLID SOLUBILITY OF THE SEMICONDUCTOR MATERIAL IN THE ONE MATERIAL OF THE METAL FILM AT THE MAXIMUM TEMPERATURE TO WHICH THE METAL FILM IS TO BE SUBJECTED DURING FURTHER PROCESSING TO PREVENT THE ONE MATERIAL OF THE METAL FILM FROM DIFFUSING INTO THE SEMICONDUCTOR MATERIAL DURING FURTHER PROCESSING AT A TEMPERATURE NO GREATER THAN THE MAXIMUM TEMPERATURE, AND CONTROLLING THE ENERGY LEVEL OF THE IONS TO POSITION THE PEAK OF THE PROFILE OF THE IMPLANTED IONS NO DEEPER THAN THE INTERFACES OF THE METAL FILM WITH THE INSULATING LAYER AND THE METAL FILM WITH THE SUBSTRATE.
Claim 2
Independent Claim
215 words
A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE HAVING A SUBSTRATE OF A SEMICONDUCTOR MATERIAL WITH AN INSULATING LAYER THEREON AND A METAL FILM OVERLYING THE INSULATING LAYER AND IN CONTACT WITH AT LEAST ONE PORTION OF THE SUBSTRATE TO FORM AN ELECTRODE LAYER INCLUDING THE STEPS OF IMPLANTING IONS OF THE SEMICONDUCTOR MATERIAL INTO THE METAL FILM TO FORM A CONCENTRATION PROFILE TO THE IMPLANTED IONS HAVING A PEAK, SELECTING THE MAXIMUM TEMPERATURE TO WHICH THE METAL FILM IS TO BE SUBJECTED DURING FURTHER PROCESSING, SELECTING THE DOSAGE OF THE IONS TO PRODUCE A PER CENT BY WEIGHT OF THE SEMICONDUCTOR MATERIAL IN ONE MATERIAL OF THE METAL FILM THAT IS GREATER THAN THE PER CENT BY WEIGHT OF SOLID SOLUBILITY OF THE SEMICONDUCTOR MATERIAL IN THE ONE MATERIAL OF THE METAL FILM AT THE MAXIMUM TEMPERATURE TO WHICH THE METAL FILM IS TO BE SUBJECTED DURING FURTHER PROCESSING TO PREVENT THE ONE MATERIAL OF THE METAL FILM FROM DIFFUSING INTO THE SEMICONDUCTOR MATERIAL DURING FURTHER PROCESSING AT A TEMPERATURE NO GREATER THAN THE MAXIMUM TEMPERATURE, AND CONTROLLING THE ENERGY LEVEL OF THE IONS TO POSITION THE PEAK OF THE PROFILE OF THE IMPLANTED IONS NO DEEPER THAN THE INTERFACES OF THE METAL FILM WITH THE INSULATING LAYER AND THE METAL FILM WITH THE SUBSTRATE.
Claim 3
Dependent Claim
27 words
The method according to claim 1 in which the semiconductor material is silicon and the metal film includes at least aluminum with aluminum being the one material.
Claim 4
Dependent Claim
23 words
The method according to claim 2 in which the metal film comprises only aluminum as the metal with aluminum being the one material.
Claim 5
Dependent Claim
45 words
The method according to claim 3 in which the energy level of the ions is controlled to position the peak of the profile of the implanted ions at the interfaces of the metal film with the insulating layer and the metal film with the substrate.
Claim 6
Dependent Claim
30 words
The method according to claim 4 including removing portions of the metal film to form at least one electrode layer prior to implantation of the ions in the metal film.
Claim 7
Dependent Claim
21 words
The method according to claim 2 in which the metal film includes aluminum and copper with aluminum being the one material.
Claim 8
Dependent Claim
45 words
The method according to claim 6 in which the energy level of the ions is controlled to position the peak of the profile of the implanted ions at the interfaces of the metal film with the insulating layer and the metal film with the substrate.
Claim 9
Dependent Claim
30 words
The method according to claim 7 including removing portions of the metal film to form at least one electrode layer prior to implantation of the ions in the metal film.
Claim 10
Dependent Claim
45 words
The method according to claim 2 in which the energy level of the ions is controlled to position the peak of the profile of the implanted ions at the interfaces of the metal film with the insulating layer and the metal film with the substrate.
Claim 11
Dependent Claim
30 words
The method according to claim 9 including removing portions of the metal film to form at least one electrode layer prior to implantation of the ions in the metal film.
Claim 12
Dependent Claim
45 words
The method according to claim 1 in which the energy level of the ions is controlled to position the peak of the profile of the implanted ions at the interfaces of the metal film with the insulating layer and the metal film with the substrate.
Claim 13
Dependent Claim
30 words
The method according to claim 11 including removing portions of the metal film to form at least one electrode layer prior to implantation of the ions in the metal film.
Claim 14
Dependent Claim
30 words
The method according to claim 1 including removing portions of the metal film to form At least one electrode layer prior to implantation of the ions in the metal film.
Claim 15
Dependent Claim
16 words
The method according to claim 1 in which the semiconductor device is a field effect transistor.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-03-17 | 1978-09-16 | 1979-03-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-03-17 | 1982-09-16 | 1983-03-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-03-17 | 1986-09-16 | 1987-03-18 | $7700.00 | Window Closed / Lapsed |