US3600797A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making ohmic contacts to semiconductor bodies by indirect ion implantation
Assignee: Raytheon Co
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Filing: 1967-12-26
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Granted: 1971-08-24
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Expires: 1987-12-26
Abstract
Abstract Method of making ohmic contacts to a semiconductor body by applying a layer of the desired contact metal on the surface of a semiconductor, bombarding this dopant with a beam of ions to drive atoms of the contact metal into the semiconductor body, and then removing the metal layer, if desired.
Inventors
- 👤 Robert W Bower
- 👤 Gordon A Shifrin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 04:47
CPC Classifications
H; H10; H10P; H10P95/00; H10P30/00; H10P30/20; Y; Y10; Y10S; Y10S148/00; Y10S148/003; Y10S148/02; Y10S148/122
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
84 words
The method of making an ohmic contact to an element of a semiconductor device comprising the steps of: applying a layer of ohmic contact material on a preselected portion of a surface of said element and irradiating at least a portion of said layer with ions of an electrically inert material including the step of removing at least a portion of said layer of ohmic contact material from said surface of said semiconductor body after the step of irradiating said layer with said ions.
Claim 2
Independent Claim
84 words
The method of making an ohmic contact to an element of a semiconductor device comprising the steps of: applying a layer of ohmic contact material on a preselected portion of a surface of said element and irradiating at least a portion of said layer with ions of an electrically inert material including the step of removing at least a portion of said layer of ohmic contact material from said surface of said semiconductor body after the step of irradiating said layer with said ions.
Claim 3
Independent Claim
87 words
The method of making an ohmic contact to a semiconductor body comprising the steps of: applying a layer of ohmic contact material on a preselected portioN of a surface of said semiconductor body, and irradiating at least a portion of said layer with ions of a second material different from said ohmic contact material including the step of removing at least a portion of said layer of ohmic contact material from said surface of said semiconductor body after the step of irradiating said layer with said ions.
Claim 4
Independent Claim
87 words
The method of making an ohmic contact to a semiconductor body comprising the steps of: applying a layer of ohmic contact material on a preselected portioN of a surface of said semiconductor body, and irradiating at least a portion of said layer with ions of a second material different from said ohmic contact material including the step of removing at least a portion of said layer of ohmic contact material from said surface of said semiconductor body after the step of irradiating said layer with said ions.
Claim 5
Dependent Claim
16 words
The method according to claim 2 wherein said ions are ions of an electrically active material.
Claim 6
Dependent Claim
28 words
The method according to claim 2 wherein said ions are ions of an electrically inert material selected from the group consisting of carbon, silicon and a noble gas.
Claim 7
Independent Claim
68 words
The method of making an ohmic contact to a semiconductor body comprising the steps of: forming a layer of one constituent of ohmic contact material on a preselected portion of a surface of a semiconductor body, and irradiating said layer with ions of a second constituent of ohmic contact material whereby atoms of said first constituent are driven into said semiconductor body with ions of said second constituent.
Claim 8
Independent Claim
68 words
The method of making an ohmic contact to a semiconductor body comprising the steps of: forming a layer of one constituent of ohmic contact material on a preselected portion of a surface of a semiconductor body, and irradiating said layer with ions of a second constituent of ohmic contact material whereby atoms of said first constituent are driven into said semiconductor body with ions of said second constituent.
Claim 9
Independent Claim
70 words
The method of making an ohmic contact to an N-type portion of a body of gallium arsenide comprising the steps of: forming a layer of gold on a preselected portion of a surface of said N-type portion; and irradiating said layer of gold with ions of tellurium whereby atoms of gold from said layer are driven into said N-type portion with said tellurium ions to form a gold-tellurium contact region.
Claim 10
Independent Claim
70 words
The method of making an ohmic contact to an N-type portion of a body of gallium arsenide comprising the steps of: forming a layer of gold on a preselected portion of a surface of said N-type portion; and irradiating said layer of gold with ions of tellurium whereby atoms of gold from said layer are driven into said N-type portion with said tellurium ions to form a gold-tellurium contact region.
Claim 11
Dependent Claim
39 words
The method according to claim 6 including the steps of: removing at least a portion of said layer of gold from said surface of said N-type portion after the step of irradiating said gold layer with said tellurium ions.
Claim 12
Dependent Claim
27 words
The method according to claim 7 including the step of annealing said gallium arsenide body after the step of irradiating said gold layer with said tellurium ions.
Claim 13
Independent Claim
69 words
The method of making an ohmic contact to an N-type portion of a body of silicon comprising the steps of: forming a layer of gold on a preselected portion of a surface of said N-type portion; and irradiating said layer of gold with ions of antimony whereby atoms of gold from said layer are driven into said N-type portion with said antimony ions to form a gold-antimony contact region.
Claim 14
Independent Claim
69 words
The method of making an ohmic contact to an N-type portion of a body of silicon comprising the steps of: forming a layer of gold on a preselected portion of a surface of said N-type portion; and irradiating said layer of gold with ions of antimony whereby atoms of gold from said layer are driven into said N-type portion with said antimony ions to form a gold-antimony contact region.
Claim 15
Dependent Claim
33 words
The method according to claim 9 including the steps of: removing at least a portion of said layer of gold from said surface of said N-type portion; and thereafter annealing said silicon body.
Claim 16
Independent Claim
110 words
The method of introducing a conductivity-type-determining impurity into a semiconductor body comprising the steps of: applying a layer of a conductivity-type-determining impurity, capable of establishing a given type of conductivity in a semiconductor body, on a preselected portion of a surface of a semiconductor body having the same type of conductivity as said given type; and irradiating said layer with ions of an electrically inert material whereby atoms of said impurity are driven into said semiconductor body including the step of removing at least a portion of said layer of ohmic contact material from said surface of said semiconductor body after the step of irradiating said layer with said ions.
Claim 17
Independent Claim
110 words
The method of introducing a conductivity-type-determining impurity into a semiconductor body comprising the steps of: applying a layer of a conductivity-type-determining impurity, capable of establishing a given type of conductivity in a semiconductor body, on a preselected portion of a surface of a semiconductor body having the same type of conductivity as said given type; and irradiating said layer with ions of an electrically inert material whereby atoms of said impurity are driven into said semiconductor body including the step of removing at least a portion of said layer of ohmic contact material from said surface of said semiconductor body after the step of irradiating said layer with said ions.
References Cited (Backward Citations)
US3024140A
Cited
US3293085A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-08-23 | 1975-02-22 | 1975-08-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-08-23 | 1979-02-22 | 1979-08-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-08-23 | 1983-02-22 | 1983-08-24 | $7700.00 | Window Closed / Lapsed |