US3849216A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a semiconductor device and semiconductor device manufactured by using the method
Assignee: US Philips Corp
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Filing: 1972-11-07
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Granted: 1974-11-19
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Expires: 1992-11-07
Abstract
Abstract A method of manufacturing a semiconductor device, preferably an insulated gate field effect transistor, comprising a surface zone having conductivity properties other than the adjoining semiconductor material beside which a conductive layer is present which is separated from the semiconductor surface by an insulating layer. According to the invention, a contact window is provided on the surface zone in a self-registering manner, an edge portion of said window being determined by an insulating layer which is obtained on the conductive layer by a superficial chemical conversion which does not attack the semiconductor body, for example, as a result of a masking layer present thereon.
Inventors
- 👤 R Salters
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 00:30
CPC Classifications
H; H10; H10P; H10P95/00; H10D; H10D64/00; H10D64/01; H10D64/011; H10D99/00; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/0128; H10W10/10; H10W10/13
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
167 words
A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE COMPRISING THE STEPS OF PROVIDING ON A SURFACE OF A SEMCONDUCTOR BODY A FIRST ELECTRICALLY INSULATING LAYER, PROVIDING ON SAID BODY SO AS TO EXTEND OVER ONLY PART OF SAID SEMICONDUCTOR SURFACE AT LEAST ONE ELECTRICALLY CONDUCTIVE LAYER SEPARATED FROM THE SEMICONDUCTOR SURFACE BY SAID FIRST INSULATING LAYER, CONVERTING THE EXPODED SURFACE OF SAID CONDUCTIVE LAYER INTO A SECOND ELECTRICALLY INSULATING LAYER BY A CHEMICAL CONVERSION PROCESS, SAID FIRST INSULATING LAYER MASKING THE UNDERLYING SEMICONDUCTOR SURFACE AGAINST SAID CHEMICAL CONVERSION PROCESS, THEREAFTER INTRODUCING INTO SAID SEMICONDUCTOR SURFACE DOPING MATERIAL AGAINST WHICH SAID CONDUCTIVE LAYER AND SAID SECOND INSULATING LAYER ACTS AS A MASK TO FORM AT LEAST ONE SURFACE ZONE IN THE BODY HAVING CONDUCTIVITY PROPERTIES DIFFERENT FROM THOSE OF THE ADJACENT SEMICONDUCTOR MATERIAL, AND FORMING BY AN ETCHING PROCESSS A CONTACT WINDOW OVER SAID SURFACE ZONE, SAID SECOND INSULATING LAYER FORMING PART OF THE CONTACT WINDOW ETCHING MASK AND BEING REMOVED AT MOST ONLY PARTLY BY SAID ETCHING PROCESS.
Claim 2
Independent Claim
167 words
A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE COMPRISING THE STEPS OF PROVIDING ON A SURFACE OF A SEMCONDUCTOR BODY A FIRST ELECTRICALLY INSULATING LAYER, PROVIDING ON SAID BODY SO AS TO EXTEND OVER ONLY PART OF SAID SEMICONDUCTOR SURFACE AT LEAST ONE ELECTRICALLY CONDUCTIVE LAYER SEPARATED FROM THE SEMICONDUCTOR SURFACE BY SAID FIRST INSULATING LAYER, CONVERTING THE EXPODED SURFACE OF SAID CONDUCTIVE LAYER INTO A SECOND ELECTRICALLY INSULATING LAYER BY A CHEMICAL CONVERSION PROCESS, SAID FIRST INSULATING LAYER MASKING THE UNDERLYING SEMICONDUCTOR SURFACE AGAINST SAID CHEMICAL CONVERSION PROCESS, THEREAFTER INTRODUCING INTO SAID SEMICONDUCTOR SURFACE DOPING MATERIAL AGAINST WHICH SAID CONDUCTIVE LAYER AND SAID SECOND INSULATING LAYER ACTS AS A MASK TO FORM AT LEAST ONE SURFACE ZONE IN THE BODY HAVING CONDUCTIVITY PROPERTIES DIFFERENT FROM THOSE OF THE ADJACENT SEMICONDUCTOR MATERIAL, AND FORMING BY AN ETCHING PROCESSS A CONTACT WINDOW OVER SAID SURFACE ZONE, SAID SECOND INSULATING LAYER FORMING PART OF THE CONTACT WINDOW ETCHING MASK AND BEING REMOVED AT MOST ONLY PARTLY BY SAID ETCHING PROCESS.
Claim 3
Dependent Claim
62 words
A method as claimed in claim 1 wherein a pattern of electrically insulating material which is at least partly inset in the semiconductor body is also provided locally in the said surface by chemical conversion of the semiconductor material, said pattern being removed at most only partly by the said etching process and bounding the contact window at least for a part.
Claim 4
Dependent Claim
43 words
A method as claimed in claim 2 wherein by the etching process a contact window is formed which is bonded entirely by the inset insulating pattern and by the portion of the first insulating layer between the conductive layer and the semiconductor surface.
Claim 5
Dependent Claim
16 words
A method as claimed in claim 1 wherein said chemical conversion process is an oxidation process.
Claim 6
Dependent Claim
33 words
A method as claimed in claim 1 wherein prior to introducing the doping material at least the parts of the first insulating layer present on the surface portion to be doped are removed.
Claim 7
Dependent Claim
34 words
A method as claimed in claim 2 wherein after forming the inset insulating pattern, the first insulating layer is provided both on the inset pattern and on the remaining parts of the semiconductor surface.
Claim 8
Dependent Claim
40 words
A method as claimed in claim 4 wherein the semiconductor body is of silicon on which is provided a layer masking against oxidation which comprises silicon nitride, and a conductive layer polycrystalline silicon is provided over the oxidation masking layer.
Claim 9
Dependent Claim
31 words
A method as claimed in claim 1 wherein the surface zone formed is of a second conductivity type opposite to that of the adjacent material which is of a first type.
Claim 10
Dependent Claim
55 words
A method as claimed in claim 8 for the manufacture of a semiconductor device having at least one insulated gate field effect transistor, wherein the conductive layer constitutes the gate electrode of the field effect transistor and the source and drain zones of the field effect transistor are formed by two of said surface zones.
Claim 11
Dependent Claim
27 words
A method as claimed in claim 1 wherein prior to the chemical conversion of the conductive layer surface, a doping material is introduced into said conductive layer.
Claim 12
Dependent Claim
62 words
A method as claimed in claim 8 wherein a surface zone of the second conductivity type is diffused into the semiconductor body over such a distance that the line of intersection of its P-N junction with the adjacent material of the first conductivity type with the surface substantially coincides with the projection of the edge of the conductive layer at the surface.
Claim 13
Dependent Claim
109 words
A method as claimed in claim 9 wherein the said field effect transistor is provided in a region of the first conductivity type bounded by an inset insulating pattern, which first type region forms a P-N junction with an adjoining part of the body of the second conductivity type and that in said adjoining part a second field effect transistor having a structure complementary to the first transistor is formed in a similar manner in which the contact windows for the source and drain zones of both transistors are all bounded by the inset insulating pattern and the first insulating layer and are provided during the same etching step.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-11-18 | 1978-05-20 | 1978-11-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-11-18 | 1982-05-20 | 1982-11-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-11-18 | 1986-05-20 | 1986-11-19 | $7700.00 | Window Closed / Lapsed |