Abstract There is disclosed an improved insulated gate field-effect transistor having a reduced gate voltage associated with the use of an aluminum-silicon gate electrode in which the electrode is composed of 90% aluminum and 10% silicon by weight. The use of the aluminum-silicon electrode in the weight percentages indicated permits the fabrication of complementary insulated gate field-effect transistors, both of which having as low a gate voltage as that of a corresponding ''''silicon gate'''' device without the inherent processing problems and reliability difficulties of the silicon gate devices. The improved complementary insulated gate field-effect transistor device is made by standard C-MOS processing techniques with the major difference in processing being the co-evaporation of aluminum and silicon during the gate electrode deposition in lieu of evaporation of pure aluminum.
AN MOSFET DEVICE COMPRISING, IN COMBINATION P-TYPE SUBSTRATE, A N-TYPE SOURCE REGION, AN N-TYPE DRAIN REGION AND AN ALUMINUM-SILICON GATE ELECTRODE THEREBETWEEN, THE THRESHOLD VOLTAGE OF SAID MOSFET DEVICE BEING AT LEAST 0.5 VOLTS LESS THAN AN OTHERWISE IDENTICAL MOSFET DEVICE HAVING A PURE ALUMINUM GATE ELECTRODE, AND ALUMINUM-SILICON METAL ELECTRODE CONTACTS TO SAID SOURCE AND DRAIN REGIONS OF SAID MOSFET DEVICE.
Claim 2
Dependent Claim
62 words
AN MOSFET DEVICE COMPRISING, IN COMBINATION P-TYPE SUBSTRATE, A N-TYPE SOURCE REGION, AN N-TYPE DRAIN REGION AND AN ALUMINUM-SILICON GATE ELECTRODE THEREBETWEEN, THE THRESHOLD VOLTAGE OF SAID MOSFET DEVICE BEING AT LEAST 0.5 VOLTS LESS THAN AN OTHERWISE IDENTICAL MOSFET DEVICE HAVING A PURE ALUMINUM GATE ELECTRODE, AND ALUMINUM-SILICON METAL ELECTRODE CONTACTS TO SAID SOURCE AND DRAIN REGIONS OF SAID MOSFET DEVICE.
Claim 3
Dependent Claim
25 words
The MOSFET device of claim 1 wherein said aluminum-silicon metal gate and source and drain electrodes being about 90% aluminum and 10% silicon by weight.