Technique of silicon epitaxial refill

Claim 1

A process of forming a plurality of epitaxial refills in thick oxide layers using a continuous flow reactor for use in producing semiconductor devices, comprising the sequential steps of: forming a silicon substrate for supporting said epitaxial refills; treating said substrate with a first standard silicon cleaning solution; immersing said treated substrate in a first acid; rinsing said acid from said substrate with distilled water; forming an oxide layer on said substrate, said oxide layer comprising densified silane oxide layers; forming a silicon nitride layer on said plurality of densified silane oxide layers; selectively forming a photoresist layer on said silicon nitride layer; etching to a predetermined depth selective areas of said photoresist layer, said silicon nitride layer, and said silane oxide layers; removing the remaining photoresist with an asher; applying a common oxide echant to the exposed silane oxide layer; removing the remaining silicon nitride; treating said etched oxide layer with a second standard silicon cleaning solution; immersing said treated etched oxide and substrate in a second acid; rinsing said second acid from said etched oxide layer and substrate with distilled water; and filling pockets formed by etching in said silane oxide layers with said refill, said refill being substantially level to the surface of said silane oxide layers.