Patent US2821616A successfully refreshed from Google Patents.
USH1145H
Expired / Lapsed
US
⏱️ 0.0 years remaining
Rapid temperature response wafer chuck
Assignee: State University of New York Polytechnic Institute
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Filing: 1991-11-06
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Granted: 1993-03-02
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Expires: 2011-11-06
Abstract
Abstract A wafer chuck having a substantially hollow cavity therein utilizes the latent vaporization of a liquid to extract heat from the wafer. An insulated heater provides for heating the wafer to its desired operating point as rapidly as possible in order to bring the wafer to its operating point before plasma etching or deposition occurs.
Inventors
- 👤 Richard L. Anderson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 20:21
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0431; H10P72/0434; H10P72/0432; H10P72/70; H10P72/76; H10P72/7604; H10P72/7624
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
144 words
An apparatus for cooling a semiconductor wafer disposed thereon comprising: a body for having said semiconductor wafer reside thereon and said body having a hollow cavity therein; spray means coupled to said body and disposed within said cavity for spraying a liquid to at least a portion of an interior surface of said cavity which is proximal to said semiconductor wafer, but wherein said liquid is prevented from physically contacting said wafer; said liquid for extracting heat from said wafer by the use of latent heat of vaporization of said liquid when said liquid is sprayed onto said portion of said interior surface of said cavity and is vaporized upon contact with said interior surface of said cavity, such that said wafer is maintained at a predetermined temperature; exhaust means coupled to said cavity of said body for exhausting vaporized liquid from said cavity.
Claim 2
Independent Claim
144 words
An apparatus for cooling a semiconductor wafer disposed thereon comprising: a body for having said semiconductor wafer reside thereon and said body having a hollow cavity therein; spray means coupled to said body and disposed within said cavity for spraying a liquid to at least a portion of an interior surface of said cavity which is proximal to said semiconductor wafer, but wherein said liquid is prevented from physically contacting said wafer; said liquid for extracting heat from said wafer by the use of latent heat of vaporization of said liquid when said liquid is sprayed onto said portion of said interior surface of said cavity and is vaporized upon contact with said interior surface of said cavity, such that said wafer is maintained at a predetermined temperature; exhaust means coupled to said cavity of said body for exhausting vaporized liquid from said cavity.
Claim 3
Dependent Claim
48 words
The apparatus of claim 1 further including heating means coupled to a surface of said body upon which said semiconductor wafer resides, wherein said semiconductor wafer is disposed onto said heating means and said heating means is utilized to rapidly heat said semiconductor wafer to a predetermined temperature.
Claim 4
Dependent Claim
13 words
The apparatus of claim 1 wherein said apparatus utilizes wafer as said liquid.
Claim 5
Dependent Claim
14 words
The apparatus of claim 1 wherein said apparatus utilizes liquid nitrogen as said liquid.
Claim 6
Dependent Claim
150 words
A chuck for cooling a semiconductor wafer disposed thereon during processing of said wafer comprising: a body having a substantially flat upper surface for having said semiconductor wafer reside thereon and said body having a hollow cavity therein; a plurality of spray nozzles coupled to said cavity of said chuck for spraying water to at least a portion of an interior surface of said cavity, including the underside of said flat upper surface, but wherein said water is prevented from physically contacting said wafer; said water for extracting heat from said wafer by use of the latent heat of vaporization of said water when said water is sprayed onto said interior surface and is vaporized upon contact with said interior surface of said cavity, such that said wafer is maintained at a predetermined temperature; said cavity having an exhaust opening for exhausting steam from said cavity to an atmospheric ambient.
Claim 7
Dependent Claim
150 words
A chuck for cooling a semiconductor wafer disposed thereon during processing of said wafer comprising: a body having a substantially flat upper surface for having said semiconductor wafer reside thereon and said body having a hollow cavity therein; a plurality of spray nozzles coupled to said cavity of said chuck for spraying water to at least a portion of an interior surface of said cavity, including the underside of said flat upper surface, but wherein said water is prevented from physically contacting said wafer; said water for extracting heat from said wafer by use of the latent heat of vaporization of said water when said water is sprayed onto said interior surface and is vaporized upon contact with said interior surface of said cavity, such that said wafer is maintained at a predetermined temperature; said cavity having an exhaust opening for exhausting steam from said cavity to an atmospheric ambient.
Claim 8
Dependent Claim
13 words
The chuck of claim 5 wherein said body is fabricated from stainless steel.
Claim 9
Dependent Claim
36 words
The chuck of claim 5 further including a heater coupled to said upper surface of said body wherein said semiconductor wafer is disposed onto said heater and said heater is utilized to heat said semiconductor wafer.
Claim 10
Dependent Claim
13 words
The chuck of claim 7 wherein said body is fabricated from stainless steel.
Claim 11
Dependent Claim
167 words
A chuck for cooling a semiconductor wafer disposed thereon during plasma processing of said wafer comprising: a body having a substantially flat upper surface and a hollow cavity disposed therein; a heater having a substantially flat shape coupled to said upper surface of said body, wherein said semiconductor wafer resides thereon; a plurality of spray jets coupled to said cavity of said chuck for spraying water to at least a portion of an interior surface of said cavity, including the underside of said flat upper surface, but wherein said water is retained in said cavity and isolated from said semiconductor wafer; said water for extracting heat from said water by the use of latent heat of vaporization of said water when said water is sprayed onto said interior surface and is vaporized upon contact with said interior surface of said cavity, such that said wafer is maintained at a predetermined temperature; said cavity having an exhaust opening for exhausting steam from said cavity to an atmospheric ambient.
Claim 12
Dependent Claim
167 words
A chuck for cooling a semiconductor wafer disposed thereon during plasma processing of said wafer comprising: a body having a substantially flat upper surface and a hollow cavity disposed therein; a heater having a substantially flat shape coupled to said upper surface of said body, wherein said semiconductor wafer resides thereon; a plurality of spray jets coupled to said cavity of said chuck for spraying water to at least a portion of an interior surface of said cavity, including the underside of said flat upper surface, but wherein said water is retained in said cavity and isolated from said semiconductor wafer; said water for extracting heat from said water by the use of latent heat of vaporization of said water when said water is sprayed onto said interior surface and is vaporized upon contact with said interior surface of said cavity, such that said wafer is maintained at a predetermined temperature; said cavity having an exhaust opening for exhausting steam from said cavity to an atmospheric ambient.
Claim 13
Dependent Claim
13 words
The chuck of claim 9 wherein said body is fabricated from stainless steel.
Claim 14
Dependent Claim
20 words
The chuck of claim 10 wherein said heater is comprised of an electric heating element disposed between a dielectric material.
Claim 15
Dependent Claim
13 words
The chuck of claim 11 wherein said dielectric material is a cermet material.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-03-01 | 1996-08-31 | 1997-03-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-03-01 | 2000-08-31 | 2001-03-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-03-01 | 2004-08-31 | 2005-03-02 | $7700.00 | Window Closed / Lapsed |