Wafer cooling and temperature control for a plasma etching system

Claim 2

In combination with a plasma etching reactor having a process chamber, including a pair of electrodes, for receiving a process gas therein, with one of said electrodes being a chuck electrode for receiving thereon a wafer having a film to be etched, means for cooling said wafer during operation of said plasma etching reactor comprising: means for cooling said chuck electrode; means for applying a pressurized gas film between said wafer and said chuck electrode to provide a heat transfer medium between said wafer and said chuck electrode; and said chuck electrode being domed shaped to minimize the gap between said wafer and said chuck electrode when said wafer bows under pressure.

Claim 3

Means for cooling a wafer as set forth in claim 1 wherein said chuck electrode includes a groove disposed close to the periphery of said wafer for receiving said pressurized gas to provide full heat transfer gas pressure over substantially the entire wafer surface opposite said chuck electrode.

Claim 4

Means for cooling a wafer as set forth in claim 2 wherein said groove is ring shaped.

Claim 5

Means for cooling a wafer as set forth in claim 3 wherein a clamping ring is provided close to the edges of said wafer to clamp said wafer to said domed chuck electrode, with a relatively small gap being formed between the edges of said wafer and said chuck electrode during operation to limit the gas to flow into said process chamber.

Claim 6

In combination with a plasma etching reactor having a process chamber including a pair of electrodes for receiving a process gas therein, with one of said electrodes including a chuck electrode for receiving thereon a wafer having a film to be etched, means for cooling said wafer by pressurized gas during operation and controlling the pressure of said gas comprising: (a) a source of gas for applying a pressurized gas film between said wafer and said chuck electrode to provide heat transfer between said wafer and chuck electrodes; (b) control means connected between said source of pressurized gas and said process chamber; (c) said control means including a proportional means of directing gas either to the space between said wafer and said chuck electrode or to said process chamber; and (d) said proportional means being normally closed to prevent said pressurized gas from entering said process chamber and responsive to pressure in excess of a predetermined level to open to cause said pressurized gas to enter said process chamber to thereby maintain relatively constant he gas pressure between said chuck electrode and wafer.

Claim 7

In combination with a plasma etching reactor having a process chamber including a pair of electrodes for receiving a process gas therein, with one of said electrodes including a chuck electrode for receiving thereon a wafer having a film to be etched, means for cooling said wafer by pressurized gas during operation and controlling the pressure of said gas comprising: (a) a source of gas for applying a pressurized gas film between said wafer and said chuck electrode to provide heat transfer between said wafer and chuck electrodes; (b) control means connected between said source of pressurized gas and said process chamber; (c) said control means including a proportional means of directing gas either to the space between said wafer and said chuck electrode or to said process chamber; and (d) said proportional means being normally closed to prevent said pressurized gas from entering said process chamber and responsive to pressure in excess of a predetermined level to open to cause said pressurized gas to enter said process chamber to thereby maintain relatively constant he gas pressure between said chuck electrode and wafer.

Claim 8

The invention as set forth in claim 5 wherein said chuck electrode is cooled by a source of cooling fluid.

Claim 9

Means for cooling as set forth in claim 6 wherein said source of pressurized gas includes a chuck plenum chamber for delivering gas to a groove in said chuck electrode disposed close to the periphery of said wafer.

Claim 10

Means for cooling as set forth in claim 7 wherein said proportional means comprises a regulator ball on a seat element normally disposed to block said process chamber until the differential pressure between said chuck electrode chamber and said process chamber rises to cause said ball to lift said ball from said seat element.

Claim 11

Means for cooling as set forth in claim 8 wherein a pumping port is connected to said process chamber to receive excess gas passing through said proportional means and said process gas.