A plasma processor for IC fabrication

Claim 2

A processing method for performing an etching process for a wafer,characterized in that it comprises the steps of : placing said wafer at a processing position; and blowing an etchant gas from the underside of said wafer to float said wafer and at the same time effect the etching at the underside of said wafer.

Claim 3

A wafer processing method according to claim 1, characterized in that said etchant gas is heated by heating elements to a specified temperature.

Claim 4

A wafer processor characterizes : an airtight reaction chamber (11) in which the wafer (1) is processed, characterized in that said reaction chamber comprises : a base plate (15) having a plurality of holes (13) and said wafer is positioned with the surface to be processed downward; and a means for blowing out an etchant gas from said holes (13) to float the wafer (1) and etch the underside of said wafer by said etchant gas.

Claim 5

A wafer processor characterizes : an airtight reaction chamber (11) in which the wafer (1) is processed, characterized in that said reaction chamber comprises : a base plate (15) having a plurality of holes (13) and said wafer is positioned with the surface to be processed downward; and a means for blowing out an etchant gas from said holes (13) to float the wafer (1) and etch the underside of said wafer by said etchant gas.

Claim 6

A wafer processor according to claim 3, characterized in that said holes (21) are provided aslant to said base plate in a specified direction, and said wafer (1) is transferred in said specified direction and simultaneously etched by said etchant gas blown out from said holes.

Claim 7

A wafer processor according to claim 3, characterized in that said holes are provided along at least one circle (22a, 22b) around the center of the base plate (23) and aslant to said base plate in a specified direction around the circle, and said wafer is rotated in said specified direction and simultaneously etched by said etchant gas blowing out from said holes.

Claim 8

A wafer processor according to claim 3, characterized in that said base plate (15) further comprises .: heating means (18) for heating said etchant gas; and a temperature controller (19) for controlling said heating means to keep said gas temperature to a specified value.

Claim 9

A wafer processor according to claims 3, 4, 5 or 6, characterized in that said etchant gas comprises

Claim 10

a plasma activated etchant gas.

Claim 11

a plasma activated etchant gas.

Claim 12

A wafer processor according to claim 3, characterized in that it further comprises : an etchant gas source (2) for providing said etchant gas; a plasma generating region (12) for generating a plasma of said etchant gas fed from said gas source to form a plasma activated etchant gas; a microvave generator (3) for supplying microwave energy to the plasma generating region; a means for transferring a plasma activated etchant gas to said reaction chamber; and a pumping device (17) exhausting the gas to keep the reaction chamber at a specified pressure.

Claim 13

A wafer processor according to claim 8, characterized in that it further comprises : a load lock space (26a, 26b) which is an airtight space formed by a space between an entrance gate valve (38a, 38b) and a slit gate valve (39a, 39b), said entrance gate valve and slit gate valve providing communication between outer space and the reaction chamber (11) via said load lock space (26a ,26b) a pressure preparing system (41) which evacuates said load lock space (26a, 26b) and refill it with the gas which is the same and has the same pressure as that of the space to which said load lock space is connected; a reverse mechanism (30a, 30b) picking up said wafer from a conveyor belt (34a) turning it over and placing it on a stage (5) of a slit gate valve (39a) through an entrance gate valve (38a), or picking up said wafer from the stage (7) of a slit gate valve (39b) through an entrance gate valve (38b), turning it over and placing it on a conveyor belt (34b); an open and close mechanism (36a, 36b) for opening or closing said entrance gate valve (38a, 38b); an up and down mechanism (31a, 31b) for moving said slit gate valve (39a, 39b) to open or close said load lock space; and a rotation mechanism (32a 32b) having a chuck (9a, 9b) on an arm (8a, 8b) to pick up said wafer,for rotating the arm to transfer said wafer from said stage (5,7), of said slit gate valve (39a, 39b) to said base plate (15) of the reaction chamber (11) or vice versa.