Patent US7141278B2 successfully refreshed from Google Patents.
US7141278B2
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Thin film forming method
Assignee: Asm Korea Ltd
•
Filing: 2001-06-08
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Granted: 2006-11-28
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Expires: 2021-06-08
Abstract
Abstract A method for forming thin films of a semiconductor device is provided. The thin film formation method presented here is based upon a time-divisional process gas supply in a chemical vapor deposition (CVD) method, where the process gases are supplied and purged sequentially, and additionally plasma is generated in synchronization with the cycle of pulsing reactant gases. A method of forming thin films that possess a property of gradient composition profile is also presented.
Inventors
- 👤 Won-Yong Koh
- 👤 Chun-Soo Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:33
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; C23C16/36; C23C16/40; C23C16/403; C23C16/405; C23C16/409; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527; C23C16/45536; C23C16/4554; C23C16/50; C23C16/515; H10P14/69; H10P14/692; H10P14/6921; H10P14/6928; H10P14/693; H10P14/6934; H10P14/6938; H10P14/6939; H10P14/69393; H10P14/69398; H10P14/6336; H10P14/69391; H10P14/69394; H10P14/69397
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
106 words
A method of forming a metal oxide layer on a substrate in a reactor using plasma in space reactor of an atomic layer deposition apparatus, the method comprising a plurality of cycles of source pulses, comprising: supplying a metallic source compound into the reactor; supplying oxygen gas into the reactor between supplying the metallic source compound and subsequent generation of a plasma; thereafter, generating the plasma directly in the reactor while continuing to supply the oxygen gas; and repeating supplying the metallic source compound, supplying oxygen gas and generating the plasma directly in the reactor until a metal oxide layer is formed to a desired thickness.
Claim 2
Independent Claim
106 words
A method of forming a metal oxide layer on a substrate in a reactor using plasma in space reactor of an atomic layer deposition apparatus, the method comprising a plurality of cycles of source pulses, comprising: supplying a metallic source compound into the reactor; supplying oxygen gas into the reactor between supplying the metallic source compound and subsequent generation of a plasma; thereafter, generating the plasma directly in the reactor while continuing to supply the oxygen gas; and repeating supplying the metallic source compound, supplying oxygen gas and generating the plasma directly in the reactor until a metal oxide layer is formed to a desired thickness.
Claim 3
Dependent Claim
33 words
The method of claim 1 , wherein the metallic source compound is trimethylaluminum (Al(CH 3 ) 3 ), and the metal oxide layer is an aluminum oxide (Al 2 O 3 ) layer.
Claim 4
Dependent Claim
52 words
The method of claim 1 , wherein the metallic source compound is dimethoxyamidoethoxytetraethoxytantalum (Ta(OC 2 H 5 ) 4 (OC 2 H 4 N(CH 3 ) 2 )) or ethoxytantalum (Ta(OC 2 H 5 ) 5 ), and the metal oxide layer is a tantalum oxide (Ta 2 O 5 ) layer.
Claim 5
Independent Claim
137 words
A method of forming a strontium titanate oxide (STO) layer on a substrate in a reactor using plasma in the reactor of an atomic layer deposition apparatus, the method comprising: (5-1) supplying a strontium-based organometallic compound into the reactor; (5-2) supplying oxygen gas into the reactor and generating oxygen plasma for a first reaction time period; (5-3) supplying a titanium-based organometallic compound into the reactor; (5-4) supplying oxygen gas into the reactor and generating oxygen plasma directly in the reactor for a second reaction time period; and (5-5) repeating said steps (5-1) through (5-4) one or more times until a strontium titanate oxide (STO) layer is formed to a desired thickness, wherein oxygen gas is continually supplied into the reactor between each of the organometallic compound supply steps and the subsequent first and second reaction time periods.
Claim 6
Independent Claim
137 words
A method of forming a strontium titanate oxide (STO) layer on a substrate in a reactor using plasma in the reactor of an atomic layer deposition apparatus, the method comprising: (5-1) supplying a strontium-based organometallic compound into the reactor; (5-2) supplying oxygen gas into the reactor and generating oxygen plasma for a first reaction time period; (5-3) supplying a titanium-based organometallic compound into the reactor; (5-4) supplying oxygen gas into the reactor and generating oxygen plasma directly in the reactor for a second reaction time period; and (5-5) repeating said steps (5-1) through (5-4) one or more times until a strontium titanate oxide (STO) layer is formed to a desired thickness, wherein oxygen gas is continually supplied into the reactor between each of the organometallic compound supply steps and the subsequent first and second reaction time periods.
Claim 7
Independent Claim
199 words
A method of forming a barium strontium titanate (BST) layer on a substrate in a reactor using plasma in the reactor of an atomic layer deposition apparatus the method comprising: (6-1) supplying a barium-based organometallic compound into the reactor; (6-2) supplying oxygen gas into the reactor and generating oxygen plasma for a first reaction time period; (6-3) supplying a titanium-based organometallic compound into the reactor; (6-4) supplying oxygen gas into the reactor and generating oxygen plasma directly in the reactor for a second reaction time period; (6-5) supplying a strontium-based organometallic compound into the reactor; (6-6) supplying oxygen gas into the reactor and generating oxygen plasma directly in the reactor for a third reaction time period; (6-7) supplying a titanium-based organometallic compound into the reactor; (6-8) supplying oxygen gas into the reactor and, thereafter, generating oxygen plasma directly in the reactor for a fourth reaction time period; and (6-9) repeating said steps (6-1) through (6-8) until a barium strontium titanate (BST) layer is formed to a desired thickness, wherein oxygen gas is continually supplied into the reactor between each of the organometallic compound supply steps and the subsequent one of the first, second, third and fourth reaction time periods.
Claim 8
Independent Claim
199 words
A method of forming a barium strontium titanate (BST) layer on a substrate in a reactor using plasma in the reactor of an atomic layer deposition apparatus the method comprising: (6-1) supplying a barium-based organometallic compound into the reactor; (6-2) supplying oxygen gas into the reactor and generating oxygen plasma for a first reaction time period; (6-3) supplying a titanium-based organometallic compound into the reactor; (6-4) supplying oxygen gas into the reactor and generating oxygen plasma directly in the reactor for a second reaction time period; (6-5) supplying a strontium-based organometallic compound into the reactor; (6-6) supplying oxygen gas into the reactor and generating oxygen plasma directly in the reactor for a third reaction time period; (6-7) supplying a titanium-based organometallic compound into the reactor; (6-8) supplying oxygen gas into the reactor and, thereafter, generating oxygen plasma directly in the reactor for a fourth reaction time period; and (6-9) repeating said steps (6-1) through (6-8) until a barium strontium titanate (BST) layer is formed to a desired thickness, wherein oxygen gas is continually supplied into the reactor between each of the organometallic compound supply steps and the subsequent one of the first, second, third and fourth reaction time periods.
Claim 9
Independent Claim
234 words
A method of forming a strontium bismuth tantalate (SBT) layer on a substrate in a reactor using plasma in the reactor of an atomic layer deposition apparatus, the method comprising: (7-1) supplying a strontium-based organometallic compound into the reactor; (7-2) supplying oxygen gas into the reactor and generating oxygen plasma directly in the reactor for a first reaction time period; (7-3) supplying a bismuth-based organometallic compound into the reactor; (7-4) supplying oxygen gas into the reactor and generating oxygen plasma directly in the reactor for a second reaction time period; (7-5) supplying a tantalum-based organometallic compound into the reactor; (7-6) supplying oxygen gas into the reactor and generating oxygen plasma directly in the reactor for a third reaction time period; (7-7) supplying a bismuth-based organomtallic compound into the reactor; (7-8) supplying oxygen gas into the reactor and, thereafter, generating oxygen plasma directly in the reactor for a fourth reaction time period; (7-9) supplying a tantalum-based organometallic compound into the reactor; (7-10) supplying oxygen gas into the reactor and generating oxygen plasma directly in the reactor for a fifth reaction time period; and (7-11) repeating the steps (7-1) through (7-10) until a barium strontium titanate (BST) layer is formed to a desired thickness, wherein oxygen gas is continually supplied into the reactor between each of the organometallic compound supply steps and the subsequent one of the first, second, third, fourth and fifth reaction time periods.
Claim 10
Independent Claim
234 words
A method of forming a strontium bismuth tantalate (SBT) layer on a substrate in a reactor using plasma in the reactor of an atomic layer deposition apparatus, the method comprising: (7-1) supplying a strontium-based organometallic compound into the reactor; (7-2) supplying oxygen gas into the reactor and generating oxygen plasma directly in the reactor for a first reaction time period; (7-3) supplying a bismuth-based organometallic compound into the reactor; (7-4) supplying oxygen gas into the reactor and generating oxygen plasma directly in the reactor for a second reaction time period; (7-5) supplying a tantalum-based organometallic compound into the reactor; (7-6) supplying oxygen gas into the reactor and generating oxygen plasma directly in the reactor for a third reaction time period; (7-7) supplying a bismuth-based organomtallic compound into the reactor; (7-8) supplying oxygen gas into the reactor and, thereafter, generating oxygen plasma directly in the reactor for a fourth reaction time period; (7-9) supplying a tantalum-based organometallic compound into the reactor; (7-10) supplying oxygen gas into the reactor and generating oxygen plasma directly in the reactor for a fifth reaction time period; and (7-11) repeating the steps (7-1) through (7-10) until a barium strontium titanate (BST) layer is formed to a desired thickness, wherein oxygen gas is continually supplied into the reactor between each of the organometallic compound supply steps and the subsequent one of the first, second, third, fourth and fifth reaction time periods.
Claim 11
Independent Claim
148 words
A method of forming a strontium bismuth tantalate (SBT) layer on a substrate in a reactor using plasma in the reactor of an atomic layer deposition apparatus, the method comprising: (8-1) supplying a bismuth-based organometallic compound into the reactor; (8-2) supplying oxygen gas into the reactor and generating oxygen plasma directly in the reactor for a first reaction time period; (8-3) supplying an organometallic compound containing strontium and tantalum in a ratio of 1:2 into the reactor; (8-4) supplying oxygen gas into the reactor and generating oxygen plasma directly in the reactor for a second reaction time period; and (8-5) repeating the steps (8-1) through (8-4) until a barium strontium titanate (BST) layer is formed to a desired thickness, wherein oxygen gas is continually supplied into the reactor between each of the organometallic compound supply steps and the subsequent one of the first and second reaction time periods.
Claim 12
Independent Claim
148 words
A method of forming a strontium bismuth tantalate (SBT) layer on a substrate in a reactor using plasma in the reactor of an atomic layer deposition apparatus, the method comprising: (8-1) supplying a bismuth-based organometallic compound into the reactor; (8-2) supplying oxygen gas into the reactor and generating oxygen plasma directly in the reactor for a first reaction time period; (8-3) supplying an organometallic compound containing strontium and tantalum in a ratio of 1:2 into the reactor; (8-4) supplying oxygen gas into the reactor and generating oxygen plasma directly in the reactor for a second reaction time period; and (8-5) repeating the steps (8-1) through (8-4) until a barium strontium titanate (BST) layer is formed to a desired thickness, wherein oxygen gas is continually supplied into the reactor between each of the organometallic compound supply steps and the subsequent one of the first and second reaction time periods.
Claim 13
Independent Claim
203 words
A method of forming a lead zirconate titanate (PZT) layer on a substrate in a reactor using plasma in the reactor of an atomic layer deposition apparatus, the method comprising: (9-1) supplying a lead-based organometallic compound into the reactor; (9-2) supplying oxygen gas into the reactor and generating oxygen plasma directly in the reactor for a first reaction time period; (9-3) supplying a zirconium-based organometallic compound into the reactor; (9-4) supplying oxygen gas into the reactor and generating oxygen plasma directly in the reactor for a second reaction time period; (9-5) supplying a lead-based organometallic compound into the reactor; (9-6) supplying oxygen gas into the reactor and generating oxygen plasma directly in the reactor for a third reaction time period; (9-7) supplying a titanium-based organometallic compound into the reactor; (9-8) supplying oxygen gas into the reactor and generating oxygen plasma directly in the reactor for a fourth reaction time period; and (9-9) repeating the steps (9-1) through (9-8) above until a barium strontium titanate (BST) layer is formed to a desired thickness, wherein oxygen gas is continually supplied into the reactor between each of the organometallic compound supply steps and the subsequent one of the first, second, third and fourth reaction time periods.
Claim 14
Independent Claim
203 words
A method of forming a lead zirconate titanate (PZT) layer on a substrate in a reactor using plasma in the reactor of an atomic layer deposition apparatus, the method comprising: (9-1) supplying a lead-based organometallic compound into the reactor; (9-2) supplying oxygen gas into the reactor and generating oxygen plasma directly in the reactor for a first reaction time period; (9-3) supplying a zirconium-based organometallic compound into the reactor; (9-4) supplying oxygen gas into the reactor and generating oxygen plasma directly in the reactor for a second reaction time period; (9-5) supplying a lead-based organometallic compound into the reactor; (9-6) supplying oxygen gas into the reactor and generating oxygen plasma directly in the reactor for a third reaction time period; (9-7) supplying a titanium-based organometallic compound into the reactor; (9-8) supplying oxygen gas into the reactor and generating oxygen plasma directly in the reactor for a fourth reaction time period; and (9-9) repeating the steps (9-1) through (9-8) above until a barium strontium titanate (BST) layer is formed to a desired thickness, wherein oxygen gas is continually supplied into the reactor between each of the organometallic compound supply steps and the subsequent one of the first, second, third and fourth reaction time periods.
Claim 15
Independent Claim
139 words
A method of forming a zirconium silicate (Zr—S—O) layer on a substrate in a reactor using plasma in the reactor of an atomic layer deposition apparatus, the method comprising: (10-1) supplying a zirconium-based organometallic compound into the reactor; (10-2) supplying oxygen gas into the reactor and generating oxygen plasma directly in the reactor for a first reaction time period; (10-3) supplying a silicon-based compound into the reactor; (10-4) supplying oxygen gas into the reactor and generating oxygen plasma directly in the reactor for a second reaction time period; and (10-5) repeating the steps (10-1) through (10-4) until a zirconium silicate (Zr—Si—O) layer is formed to a desired thickness, wherein oxygen gas is continually supplied into the reactor between each of the organometallic or silicon-based compound supply steps and the subsequent one of the first and second reaction time periods.
Claim 16
Independent Claim
139 words
A method of forming a zirconium silicate (Zr—S—O) layer on a substrate in a reactor using plasma in the reactor of an atomic layer deposition apparatus, the method comprising: (10-1) supplying a zirconium-based organometallic compound into the reactor; (10-2) supplying oxygen gas into the reactor and generating oxygen plasma directly in the reactor for a first reaction time period; (10-3) supplying a silicon-based compound into the reactor; (10-4) supplying oxygen gas into the reactor and generating oxygen plasma directly in the reactor for a second reaction time period; and (10-5) repeating the steps (10-1) through (10-4) until a zirconium silicate (Zr—Si—O) layer is formed to a desired thickness, wherein oxygen gas is continually supplied into the reactor between each of the organometallic or silicon-based compound supply steps and the subsequent one of the first and second reaction time periods.
Claim 17
Independent Claim
139 words
A method of forming a hafnium silicate (Hf—S—O) layer on a substrate in a reactor using plasma in the reactor of an atomic layer deposition apparatus, the method comprising: (11-1) supplying a hafnium-based organometallic compound into the reactor; (11-2) supplying oxygen gas into the reactor and generating oxygen plasma directly in the reactor for a first reaction time period; (11-3) supplying a silicon-based compound into the reactor; (11-4) supplying oxygen gas into the reactor and generating oxygen plasma directly in the reactor for a second reaction time period; and (11-5) repeating steps (11-1) through (11-4) above until a hafnium silicate (Hf—Si—O) layer is formed to a desired thickness, wherein oxygen gas is continually supplied into the reactor between each of the organometallic or silicon-based compound supply steps and the subsequent one of the first and second reaction time periods.
Claim 18
Independent Claim
139 words
A method of forming a hafnium silicate (Hf—S—O) layer on a substrate in a reactor using plasma in the reactor of an atomic layer deposition apparatus, the method comprising: (11-1) supplying a hafnium-based organometallic compound into the reactor; (11-2) supplying oxygen gas into the reactor and generating oxygen plasma directly in the reactor for a first reaction time period; (11-3) supplying a silicon-based compound into the reactor; (11-4) supplying oxygen gas into the reactor and generating oxygen plasma directly in the reactor for a second reaction time period; and (11-5) repeating steps (11-1) through (11-4) above until a hafnium silicate (Hf—Si—O) layer is formed to a desired thickness, wherein oxygen gas is continually supplied into the reactor between each of the organometallic or silicon-based compound supply steps and the subsequent one of the first and second reaction time periods.
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