US6416822B1
Expired / Lapsed
US
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Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
Assignee: Novellus Systems Inc
•
Filing: 2001-03-19
•
Granted: 2002-07-09
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Expires: 2021-03-19
Abstract
Abstract The present invention relates to an enhanced non-sequential atomic layer deposition (ALD) technique suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. This is accomplished by 1) providing a non-thermal or non-pyrolytic means of triggering the deposition reaction; 2) providing a means of depositing a purer film of higher density at lower temperatures; and, 3) providing a faster and more efficient means of modulating the deposition sequence and hence the overall process rate resulting in an improved deposition method.
Inventors
- 👤 Tony P. Chiang
- 👤 Karl F. Leeser
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:46
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/06; C23C16/08; C23C16/02; C23C16/0227; C23C16/22; C23C16/30; C23C16/34; C23C16/40; C23C16/401; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527; C23C16/45536; C23C16/45538; C23C16/45544; C23C16/46; C23C16/463; C23C16/466; C23C16/48; C23C16/481; C23C16/483; H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/042
Claims Analysis
Total Claims: 65
Claim 1
Independent Claim
174 words
A method for depositing a thin film onto a substrate in an evacuated chamber comprising: placing said substrate onto a substrate holder in a deposition chamber area; introducing at least one ion generating feed gas into a plasma generation chamber area in communication with said deposition chamber area, but substantially isolated via a distribution showerhead comprised of one or more apertures located between said plasma generation chamber area and said deposition chamber area; introducing at least one radical generating feed gas into said plasma generation chamber area; generating a plasma from said ion generating feed gas to form ions; generating a plasma from said radical generating feed gas to form radicals; electrically biasing said substrate to a negative potential; introducing at least one reactant gas into said deposition chamber area; adsorbing at least one monolayer of said reactant gas on said substrate; exposing said substrate to said ions and said radicals; modulating said ions; and reacting said adsorbed monolayer of said reactant gas with said ions and said radicals to deposit said thin film.
Claim 2
Independent Claim
174 words
A method for depositing a thin film onto a substrate in an evacuated chamber comprising: placing said substrate onto a substrate holder in a deposition chamber area; introducing at least one ion generating feed gas into a plasma generation chamber area in communication with said deposition chamber area, but substantially isolated via a distribution showerhead comprised of one or more apertures located between said plasma generation chamber area and said deposition chamber area; introducing at least one radical generating feed gas into said plasma generation chamber area; generating a plasma from said ion generating feed gas to form ions; generating a plasma from said radical generating feed gas to form radicals; electrically biasing said substrate to a negative potential; introducing at least one reactant gas into said deposition chamber area; adsorbing at least one monolayer of said reactant gas on said substrate; exposing said substrate to said ions and said radicals; modulating said ions; and reacting said adsorbed monolayer of said reactant gas with said ions and said radicals to deposit said thin film.
Claim 3
Dependent Claim
32 words
The method of claim 1 , wherein at least one aperture of said one or more apertures of said distribution showerhead has dimensions through which said ions and said radicals may pass.
Claim 4
Dependent Claim
60 words
The method of claim 2 , further comprising a pressure differential created between said plasma generation chamber area and said deposition chamber area via a pressure drop across at least one aperture of said one or more apertures of said distribution showerhead with the pressure in said plasma generation chamber area greater than the pressure in said deposition chamber area.
Claim 5
Dependent Claim
44 words
The method of claim 3 , wherein said pressure differential causes said ions and said radicals to flow from said plasma generation chamber area to said deposition chamber area via at least one aperture of said one or more apertures of said distribution showerhead.
Claim 6
Dependent Claim
31 words
The method of claim 3 , wherein the pressure in said plasma generation chamber area is greater than or equal to about 5 times the pressure in said deposition chamber area.
Claim 7
Dependent Claim
31 words
The method of claim 5 , wherein the pressure in said plasma generation chamber area is greater than or equal to about 10 times the pressure in said deposition chamber area.
Claim 8
Dependent Claim
31 words
The method of claim 3 , wherein said pressure drop limits said reactant gas in said deposition chamber area from intermixing with said plasma generated in said plasma generation chamber area.
Claim 9
Dependent Claim
31 words
The method of claim 1 , wherein said distribution showerhead prevents said reactant gas in said deposition chamber area from intermixing with said plasma generated in said plasma generation chamber area.
Claim 10
Dependent Claim
18 words
The method of claim 1 , wherein said substrate is simultaneously exposed to said ions and said radicals.
Claim 11
Dependent Claim
19 words
The method of claim 1 , wherein said substrate is exposed to said ions after exposure to said radicals.
Claim 12
Dependent Claim
29 words
The method of claim 1 , wherein a pressure of said deposition chamber area is maintained in a range of approximately 10 2 to 10 −7 torr during processing.
Claim 13
Dependent Claim
28 words
The method of claim 1 , wherein said pressure of said deposition chamber area is maintained in a range of approximately 1 to 10 −4 torr during processing.
Claim 14
Dependent Claim
15 words
The method of claim 1 , wherein application of said bias occurs during ion exposure.
Claim 15
Dependent Claim
15 words
The method of claim 1 , wherein application of said bias occurs during radical exposure.
Claim 16
Dependent Claim
18 words
The method of claim 1 , wherein application of said bias occurs during simultaneous ion and radical exposure.
Claim 17
Dependent Claim
23 words
The method of claim 1 , wherein said bias is coupled to said substrate via said substrate pedestal on which said substrate rests.
Claim 18
Dependent Claim
25 words
The method of claim 16 , wherein said substrate pedestal is an electrostatic chuck (ESC) to provide coupling of said bias voltage to said substrate.
Claim 19
Dependent Claim
18 words
The method of claim 1 , wherein said electrical bias is produced by a direct current power supply.
Claim 20
Dependent Claim
18 words
The method of claim 1 , wherein said electrical bias is induced by a radio frequency power supply.
Claim 21
Dependent Claim
24 words
The method of claim 19 , wherein said radio frequency is selected from the group consisting of 400 kHz, 2 MHz, and 13.56 MHz.
Claim 22
Dependent Claim
21 words
The method of claim 1 , wherein said negative potential is between about −20 V to −1000 V relative to ground.
Claim 23
Dependent Claim
21 words
The method of claim 21 , wherein said negative potential is between about −25 V to −500 V relative to ground.
Claim 24
Dependent Claim
21 words
The method of claim 22 , wherein said negative potential is between about −50 V to −350 V relative to ground.
Claim 25
Dependent Claim
36 words
The method of claim 1 , wherein said reactant gas is selected from the group consisting of Ta containing precursors, W containing precursors, Ti containing precursors, Mo containing precursors, Hf containing precursors, and Cu containing precursors.
Claim 26
Dependent Claim
14 words
The method of claim 1 , wherein said reactant gas is a metal halide.
Claim 27
Dependent Claim
31 words
The method of claim 25 , wherein said metal halide is selected from the group consisting of TaCl 5 , TaBr 5 , WF 6 , TiCl 4 , and CuCl.
Claim 28
Dependent Claim
13 words
The method of claim 1 , wherein said reactant gas is an organometallic.
Claim 29
Dependent Claim
36 words
The method of claim 27 , wherein said organometallic is selected from the group consisting of pentakis(diethylamido)tantalum (PDEAT), pentakis(ethylmethylamido)tantalum (PEMAT), t-butylimino tris(diethylamino) tantalum (TBTDET), W(CO) 6 , tetrakis(dimethylamido)titanium (TDMAT), tetrakis(diethylamido)titanium (TDEAT), and (Trimethylvinylsilyl)hexafluoroacetylacetonato Copper I (Cu(TMVS)(hfac)).
Claim 30
Dependent Claim
36 words
The method of claim 1 , wherein said radical generating feed gas is selected from the group consisting of H 2 , O 2 , N 2 , NH 3 , and H 2 O vapor.
Claim 31
Dependent Claim
28 words
The method of claim 1 , wherein said generated radicals are selected from a group consisting of hydrogen atoms, nitrogen atoms, oxygen atoms, OH molecules, and NH molecules.
Claim 32
Dependent Claim
24 words
The method of claim 1 , wherein said ion generating feed gas is selected from a group consisting of Argon, Krypton, Neon, and Xenon.
Claim 33
Dependent Claim
30 words
The method of claim 1 , wherein said generated ions are selected from a group consisting of Ar + , Kr + , Ne + , and Xe + .
Claim 34
Dependent Claim
18 words
The method of claim 1 , further comprising exposing said substrate to at least one additional reactant gas.
Claim 35
Dependent Claim
28 words
The method of claim 1 , further comprising exposing said substrate to said reactant gas while varying exposure of said substrate to said ions via said ion modulation.
Claim 36
Dependent Claim
30 words
The method of claim 34 , wherein said ion modulation is effected in a way selected from the group consisting of modulating an ion flux and modulating an ion energy.
Claim 37
Dependent Claim
53 words
The method of claim 35 , wherein modulation in said ion flux is modulated in a way selected from the group consisting of modulating a flow of said ion generating feed gas, modulating a power of said plasma, mechanically occluding said ions, and modulating the relative movement between said plasma and said substrate.
Claim 38
Dependent Claim
25 words
The method of claim 36 , wherein said plasma power is periodically modulated in a way selected from the group consisting of periodicity and magnitude.
Claim 39
Dependent Claim
29 words
The method of claim 36 , wherein a frequency of said plasma power is selected from the group consisting of 400 kHz, 2 MHz, 13.56 MHz, and 2.45 GHz.
Claim 40
Dependent Claim
22 words
The method of claim 37 , wherein said ion flux is modulated within a periodicity range of 0.1 Hz to 20 MHz.
Claim 41
Dependent Claim
22 words
The method of claim 39 , wherein said ion flux is modulated within a periodicity range of 10 Hz to 10 kHz.
Claim 42
Dependent Claim
23 words
The method of claim 1 , wherein said ion modulation occurs by modulating a magnitude of said negative potential bias on said substrate.
Claim 43
Dependent Claim
62 words
The method of claim 41 , wherein said modulation of said negative potential magnitude is effected in a way selected from the group consisting of changing a magnitude of a direct current bias potential on said substrate and changing a magnitude of a radio frequency power applied to said substrate thereby inducing a change in said magnitude of said substrate bias potential.
Claim 44
Dependent Claim
23 words
The method of claim 41 , wherein said negative potential magnitude is modulated within a periodicity range of 0.1 Hz to 20 MHz.
Claim 45
Dependent Claim
23 words
The method of claim 43 , wherein said negative potential magnitude is modulated within a periodicity range of 10 Hz to 10 kHz.
Claim 46
Dependent Claim
25 words
The method of claim 1 , wherein said electrical bias is modulated in a way selected from the group consisting of periodicity, magnitude, and duty-cycle.
Claim 47
Dependent Claim
24 words
The method of claim 1 , further comprising varying said electrical bias applied to said substrate while a power of said plasma is maintained.
Claim 48
Dependent Claim
24 words
The method of claim 1 , further comprising varying a power of said plasma while said electrical bias applied to said substrate is maintained.
Claim 49
Dependent Claim
28 words
The method of claim 1 , further comprising occasionally occluding said ions while a power of said plasma and said electrical bias applied to said substrate are maintained.
Claim 50
Dependent Claim
22 words
The method of claim 1 , further comprising maintaining said substrate at a temperature of between about 25° C. to 350° C.
Claim 51
Dependent Claim
18 words
The method of claim 49 , wherein said temperature is maintained between about 20° C. to 250° C.
Claim 52
Dependent Claim
18 words
The method of claim 50 , wherein said temperature is maintained between about 100° C. to 200° C.
Claim 53
Dependent Claim
30 words
The method of claim 1 , further comprising said ions and said radicals removing unwanted impurities from said substrate prior to said adsorption of said monolayer of said reactant gas.
Claim 54
Dependent Claim
29 words
The method of claim 52 , wherein said ions are selected from a group consisting of Ar + , Kr + , Ne + , and Xe + .
Claim 55
Dependent Claim
23 words
The method of claim 52 , wherein said unwanted impurities are selected from the group consisting of carbon-, oxygen-, fluorine-, and chlorine-containing impurities.
Claim 56
Dependent Claim
25 words
The method of claim 52 , wherein said radicals are selected from the group consisting of hydrogen atoms, nitrogen atoms, OH molecules, and NH molecules.
Claim 57
Dependent Claim
12 words
The method of claim 52 , wherein said monolayer is an organometallic.
Claim 58
Dependent Claim
13 words
The method of claim 52 , wherein said monolayer is a metal halide.
Claim 59
Dependent Claim
24 words
The method of claim 1 , further comprising said ions and said radicals removing unwanted impurities from said monolayer during said film deposition reaction.
Claim 60
Dependent Claim
13 words
The method of claim 58 , wherein said monolayer is a metal halide.
Claim 61
Dependent Claim
23 words
The method of claim 58 , wherein said unwanted impurities are selected from the group consisting of carbon-, oxygen-, fluorine-, and chlorine-containing impurities.
Claim 62
Dependent Claim
25 words
The method of claim 58 , wherein said radicals are selected from the group consisting of hydrogen atoms, nitrogen atoms, OH molecules, and NH molecules.
Claim 63
Dependent Claim
12 words
The method of claim 58 , wherein said monolayer is an organometallic.
Claim 64
Dependent Claim
29 words
The method of claim 58 , wherein said ions are selected from a group consisting of Ar + , Kr + , Ne + , and Xe + .
Claim 65
Dependent Claim
22 words
The method of claim 1 , wherein said adsorption of said monolayer of said reactant gas on said substrate occurs via chemisorption.
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