Abstract A deposition apparatus has a reactor 11 which is furnished with a reaction gas delivery part 13 and a substrate holder 12 in which reaction gas is delivered from the reaction gas delivery part to a substrate 23 on the substrate holder, and a thin film is deposited on the substrate by means of a chemical reaction which results from supplying HF power to the reaction gas delivery part. Plasma is generated and excites the reaction gas. The gas delivery parts 27, 29, 30, 31 produce a flow of purge gas in the dead space surrounding the reaction gas deliver part. Reaction gas which is liable to be retained in the dead space is driven out by the flow of this gas, and circulation and retention of reaction gas are prevented.
A method of chemical vapor deposition in a chemical vapor deposition apparatus having a reaction chamber and a substrate holder having an outer diameter, comprising the steps of: introducing a reaction gas into the reaction chamber; introducing a purge gas into the reaction chamber through holes arranged at locations adjacent a wall of the reaction chamber and which locations have an inside dimension that is greater than the outer diameter of the substrate holder; performing chemical vapor deposition in the reaction chamber; and exhausting the purge gas and the reaction gas from the reaction chamber.
Claim 2
Independent Claim
95 words
A method of chemical vapor deposition in a chemical vapor deposition apparatus having a reaction chamber and a substrate holder having an outer diameter, comprising the steps of: introducing a reaction gas into the reaction chamber; introducing a purge gas into the reaction chamber through holes arranged at locations adjacent a wall of the reaction chamber and which locations have an inside dimension that is greater than the outer diameter of the substrate holder; performing chemical vapor deposition in the reaction chamber; and exhausting the purge gas and the reaction gas from the reaction chamber.
Claim 3
Dependent Claim
38 words
The method of claim 1, wherein the purge gas introducing step includes introducing the purge gas through said holes further located symmetrically about a center axis of the reaction chamber in a top wall of the reaction chamber.
Claim 4
Dependent Claim
35 words
The method of claim 1, wherein the purge gas and the reaction gas exhausting step includes exhausting the purge gas and the reaction gas through exhaust ports at locations across from the purge gas holes.
Claim 5
Dependent Claim
37 words
The method of claim 3, wherein the locations of the exhaust ports of the purge gas and the reaction gas exhausting step have an inside dimension that is greater than the outer diameter of the substrate holder.