US6080446A
Expired / Lapsed
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Method of depositing titanium nitride thin film and CVD deposition apparatus
Assignee: Canon Anelva Corp
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Filing: 1998-04-21
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Granted: 2000-06-27
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Expires: 2018-04-21
Abstract
Abstract A method for fabricating a titanium nitride thin film in a reaction vessel on a surface of a substrate heated to a prescribed temperature, includes the steps of mixing tetrakis(dialkylamino)titanium (TDAAT) and a first carrier gas to create a first mixed gas; feeding the first mixed gas into the reaction vessel through a first set of nozzles; mixing an added gas reactive with the tetrakis(dialkylamino)titanium with a second carrier gas to create a second mixed gas; feeding the second mixed gas into the reaction vessel through a second set of nozzles; while controlling the flow rates of the TDAAT, added gas, firt and second carrier gases; and depositing a titanium nitride thin film by the first mixed gas and the second mixed gas while confining the pressure inside the reaction vessel to a range of 0.1-15 Pa.
Inventors
- 👤 Ryoki Tobe
- 👤 Yasuaki Tanaka
- 👤 Atsushi Sekiguchi
- 👤 Hitoshi Jimba
- 👤 So Won Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:02
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45563; C23C16/45565; C23C16/22; C23C16/30; C23C16/34; C23C16/45502; C23C16/45561; C23C16/45576; H; H10; H10P; H10P14/00; H10P14/40; H10P14/418
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
188 words
A method for fabricating a titanium nitride thin film in a reaction vessel on a surface of a substrate heated to a prescribed temperature, comprising the steps of: mixing tetrakis(dialkylamino)titanium and a first carrier gas to create a first mixed gas; feeding the first mixed gas into the reaction vessel through a first set of nozzles, while confining the flow rate of the tetrakis(dialkylamino)titanium to a range of 0.004-0.2 g/min. and confining the flow rate of the first carrier gas mixed with the tetrakis(dialkylamino)titanium to a range of 100-1000 sccm.; mixing an added gas reactive with the tetrakis(dialkylamino)titanium with a second carrier gas to create a second mixed gas; feeding the second mixed gas into the reaction vessel through a second set of nozzles, while confining the flow rate of the added gas to a range of 10-100 sccm. and confining the flow rate of the second carrier gas to a range of 10-500 sccm.; and depositing a titanium nitride thin film by means of the first mixed gas and the second mixed gas while confining the pressure inside the reaction vessel to a range of 0.1-15 Pa.
Claim 2
Independent Claim
188 words
A method for fabricating a titanium nitride thin film in a reaction vessel on a surface of a substrate heated to a prescribed temperature, comprising the steps of: mixing tetrakis(dialkylamino)titanium and a first carrier gas to create a first mixed gas; feeding the first mixed gas into the reaction vessel through a first set of nozzles, while confining the flow rate of the tetrakis(dialkylamino)titanium to a range of 0.004-0.2 g/min. and confining the flow rate of the first carrier gas mixed with the tetrakis(dialkylamino)titanium to a range of 100-1000 sccm.; mixing an added gas reactive with the tetrakis(dialkylamino)titanium with a second carrier gas to create a second mixed gas; feeding the second mixed gas into the reaction vessel through a second set of nozzles, while confining the flow rate of the added gas to a range of 10-100 sccm. and confining the flow rate of the second carrier gas to a range of 10-500 sccm.; and depositing a titanium nitride thin film by means of the first mixed gas and the second mixed gas while confining the pressure inside the reaction vessel to a range of 0.1-15 Pa.
Claim 3
Dependent Claim
27 words
The method as defined in claim 1, wherein the flow velocity of the second mixed gas through the second nozzles is set to 0.17 m/sec or greater.
Claim 4
Dependent Claim
48 words
The method as defined in claim 1, wherein a diameter of the first and second nozzles is set to 4 mm or less, and a distance between the centers of each of the first nozzles and a closest one of the second nozzles is 1 cm, or greater.
Claim 5
Dependent Claim
34 words
The method as defined in claim 3, wherein a distance between the centers of each of the first nozzles and a closest one of the second nozzles is within a range of 1-2.5 cm.
Claim 6
Dependent Claim
19 words
The method as defined in claim 1, wherein said tetrakis(dialkylamino)titanium is tetrakis(diethylamino)titanium, and said added gas is ammonia gas.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-06-27 | 2003-12-27 | 2004-06-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-06-27 | 2007-12-27 | 2008-06-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-06-27 | 2011-12-27 | 2012-06-27 | $7700.00 | Window Closed / Lapsed |