US5672385A
Expired / Lapsed
US
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Titanium nitride film-MOCVD method incorporating use of tetrakisdialkylaminotitanium as a source gas
Assignee: Canon Anelva Corp
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Filing: 1996-03-06
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Granted: 1997-09-30
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Expires: 2016-03-06
Abstract
Abstract The present invention provides a method of depositing a titanium nitride thin film with good coverage even in a hole with a high aspect ratio by using tetrakisdialkylaminotitanium. In this method, a raw material gas of tetrakisdialkylaminotitanium is introduced into a reactor through a raw material gas introduction system. When the raw material gas is supplied to a substrate which is previously heated by a holder temperature control mechanism, predetermined thermally chemical reaction takes place to deposit a thin film consisting of titanium nitride as a main component. The pressure in the reactor is controlled by an exhaust system so as to be maintained at a predetermined value in the range of about 0.1 to 15 Pa.
Inventors
- 👤 Hitoshi Jimba
- 👤 So Won Kim
- 👤 Atsushi Sekiguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:49
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/10; C30B29/38; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
93 words
A method of depositing a thin film comprising titanium nitride as a main component on a surface of a substrate, said method comprising the steps of: providing a substrate on which contact holes having a diameter of 0.25 μm and aspect ratio of 4.0 are patterned; providing a thermal chemical reaction of tetrakisdialkylaminotitanium gas used as a raw material gas in an atmosphere under a pressure in a range of about 0.1 to about 15 Pa thereby forming a titanium nitride thin film covering about 100% of the bottoms of said contact holes.
Claim 2
Independent Claim
93 words
A method of depositing a thin film comprising titanium nitride as a main component on a surface of a substrate, said method comprising the steps of: providing a substrate on which contact holes having a diameter of 0.25 μm and aspect ratio of 4.0 are patterned; providing a thermal chemical reaction of tetrakisdialkylaminotitanium gas used as a raw material gas in an atmosphere under a pressure in a range of about 0.1 to about 15 Pa thereby forming a titanium nitride thin film covering about 100% of the bottoms of said contact holes.
Claim 3
Dependent Claim
24 words
A method of depositing a titanium nitride thin film according to claim 1, wherein an additive gas is added to the raw material gas.
Claim 4
Dependent Claim
20 words
A method of depositing a titanium nitride thin film according to claim 2, wherein the additive gas is ammonia gas.
Claim 5
Dependent Claim
31 words
A method of depositing a titanium nitride thin film according to claim 3, wherein the ammonia gas is added at a flow rate of 15 sccm to the raw material gas.
Claim 6
Dependent Claim
33 words
A method of depositing a titanium nitride thin film according to claim 1, wherein tetrakisdialkylaminotitanium as the raw material gas is selected from the group consisting of tetrakisdiethylaminotitanium, tetrakisdimethylaminotitanium, tetrakisdipropylaminotitanium, tetrakisdiisobutylaminotitanium and tetrakis-di-tert-butylaminotitanium.
Claim 7
Independent Claim
97 words
A method of depositing a titanium nitride thin film, comprising the steps of: heating a reactor to a first temperature above room temperature; placing a substrate on which contact holes having a diameter of 0.25 μm and aspect ratio of 4.0 are patterned in said reactor; heating said substrate to a second temperature above ambient temperature; introducing a tetrakisdialkylaminotitanium (TDAAT) gas into said reactor, said reactor having a deposition pressure in a range of about 0.1 to about 15 Pa thereby forming a titanium nitride thin film covering about 100% of the bottoms of said contact holes.
Claim 8
Independent Claim
97 words
A method of depositing a titanium nitride thin film, comprising the steps of: heating a reactor to a first temperature above room temperature; placing a substrate on which contact holes having a diameter of 0.25 μm and aspect ratio of 4.0 are patterned in said reactor; heating said substrate to a second temperature above ambient temperature; introducing a tetrakisdialkylaminotitanium (TDAAT) gas into said reactor, said reactor having a deposition pressure in a range of about 0.1 to about 15 Pa thereby forming a titanium nitride thin film covering about 100% of the bottoms of said contact holes.
Claim 9
Dependent Claim
31 words
A method of depositing a titanium nitride thin film according to claim 6, wherein said TDAAT introduction step further comprises the step of: introducing an additive gas with said TDAAT gas.
Claim 10
Dependent Claim
20 words
A method of depositing a titanium nitride thin film according to claim 7, wherein the additive gas is ammonia gas.
Claim 11
Dependent Claim
30 words
A method of depositing a titanium nitride thin film according to claim 8, wherein the ammonia gas is added at a flow rate of 15 sccm to the tetrakisdialkylaminotitanium gas.
Claim 12
Dependent Claim
31 words
A method of depositing a titanium nitride thin film according to claim 6, wherein said TDAAT introduction step further comprises the step of: introducing a carrier gas with said TDAAT gas.
Claim 13
Dependent Claim
72 words
A method of depositing a titanium nitride thin film according to claim 6, wherein said TDAAT introduction step further comprises the step of: first evacuating said reactor to about 10 -4 Pa; simultaneously introducing TDAAT gas, a carrier gas, and an additive gas into said reactor; heating said TDAAT gas, carrier gas and additive gas in said reactor, and further heating said TDAAT gas, carrier gas and additive gas on said substrate.
Claim 14
Dependent Claim
29 words
A method of depositing a titanium nitride thin film according to claim 11, wherein said first temperature is about 70° C. and said second temperature is about 350° C.
Claim 15
Dependent Claim
30 words
A method of depositing a titanium nitride thin film according to claim 6, wherein said tetrakisdialkylaminotitanium gas is selected from the group consisting of tetrakisdiethylaminotitanium, tetrakisdimethylaminotitanium, tetrakisdipropylaminotitanium, tetrakisdiisobutylaminotitanium and tetrakis-di-tert-butylaminotitanium.
References Cited (Backward Citations)
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