Patent US6841439B1 successfully refreshed from Google Patents.
US6841439B1
Expired / Lapsed
US
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High permittivity silicate gate dielectric
Assignee: Texas Instruments Inc
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Filing: 1998-07-15
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Granted: 2005-01-11
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Expires: 2018-07-15
Abstract
Abstract A field effect semiconductor device comprising a high permittivity silicate gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate 20 having a semiconducting channel region 24 formed therein. A metal silicate gate dielectric layer 36 is formed over this substrate, followed by a conductive gate 38 . Silicate layer 36 may be, e.g., hafnium silicate, such that the dielectric constant of the gate dielectric is significantly higher than the dielectric constant of silicon dioxide. However, the silicate gate dielectric may also be designed to have the advantages of silicon dioxide, e.g. high breakdown, low interface state density, and high stability. The present invention includes methods for depositing both amorphous and polycrystalline silicate layers, as well as graded composition silicate layers.
Inventors
- 👤 John Mark Anthony
- 👤 Scott R. Summerfelt
- 👤 Robert M. Wallace
- 👤 Glen D. Wilk
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:51
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/691; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D64/01342; H10D64/01344; H10D64/0135; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6314; H10P14/6319; H10P14/6326; H10P14/6328; H10P14/6329; H10P14/6334; H10P14/69; H10P14/692; H10P14/6921; H10P14/6928; H10P14/6934
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
41 words
A method of fabricating a field-effect transistor on an integrated circuit, comprising the steps of: providing a single-crystal silicon substrate; forming a metal silicate dielectric layer on the substrate; and forming a conductive transistor gate overlying the metal silicate dielectric layer.
Claim 2
Independent Claim
41 words
A method of fabricating a field-effect transistor on an integrated circuit, comprising the steps of: providing a single-crystal silicon substrate; forming a metal silicate dielectric layer on the substrate; and forming a conductive transistor gate overlying the metal silicate dielectric layer.
Claim 3
Independent Claim
41 words
A method of fabricating a field-effect transistor on an integrated circuit, comprising the steps of: providing a single-crystal silicon substrate; forming a zirconium silicate dielectric layer on the substrate; and forming a conductive transistor gate overlying the zirconium silicate dielectric layer.
Claim 4
Independent Claim
41 words
A method of fabricating a field-effect transistor on an integrated circuit, comprising the steps of: providing a single-crystal silicon substrate; forming a zirconium silicate dielectric layer on the substrate; and forming a conductive transistor gate overlying the zirconium silicate dielectric layer.
Claim 5
Dependent Claim
36 words
The method of claim 2 , wherein the forming a zirconium silicate dielectric layer step comprises: exposing a clean Si surface on the substrate; and depositing a partially reduced zirconium silicate layer on the Si surface.
Claim 6
Dependent Claim
25 words
The method of claim 3 , further comprising annealing the partially reduced zirconium silicate layer substrate in oxygen, thereby forming the zirconium silicate dielectric layer.
Claim 7
Dependent Claim
29 words
The method of claim 4 , wherein the depositing a partially reduced zirconium silicate layer on the Si surface comprises simultaneous physical vapor deposition of zirconium oxide and silicon.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2008-01-11 | 2008-07-12 | 2009-01-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2012-01-11 | 2012-07-12 | 2013-01-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2016-01-11 | 2016-07-12 | 2017-01-11 | $7700.00 | Window Closed / Lapsed |