US4952992A
Expired / Lapsed
US
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Method and apparatus for improving the on-voltage characteristics of a semiconductor device
Assignee: Vishay Siliconix Inc
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Filing: 1989-09-13
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Granted: 1990-08-28
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Expires: 2009-09-13
Abstract
Abstract A semiconductor device is disclosed which utilizes a Schottky-barrier diode to inject minority carriers into the device.
Inventors
- 👤 Richard A. Blanchard
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 18:59
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/101; H10D84/141; H10D84/146; H10D12/00; H10D12/411; H10D30/00; H10D30/60; H10D30/64; H10D30/66
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
189 words
A semiconductor device comprising a substrate of first conductivity type, a first region of conductivity type opposite said first conductivity type extending into said substrate from a surface of said substrate, a second region of first conductivity type in said first region and extending into said first region into a depth less than that which said first region extends into said substrate, a drain region adjacent to said first region and extending to said surface, a channel region along said surface between said second region and said drain region, an insulating layer disposed on said surface of said substrate over the channel region, a gate electrode having first and second portions, with said first portion of said gate electrode being disposed on part of said insulating layer and positioned over the channel region, with said second portion of said gate electrode disposed on said surface of said substrate and being positioned adjacent where the drain region extends to said substrate surface, the composition of said gate electrode being such that a Schottky-barrier diode is formed by the contact of said second portion of said gate electrode and said substrate.
Claim 2
Dependent Claim
189 words
A semiconductor device comprising a substrate of first conductivity type, a first region of conductivity type opposite said first conductivity type extending into said substrate from a surface of said substrate, a second region of first conductivity type in said first region and extending into said first region into a depth less than that which said first region extends into said substrate, a drain region adjacent to said first region and extending to said surface, a channel region along said surface between said second region and said drain region, an insulating layer disposed on said surface of said substrate over the channel region, a gate electrode having first and second portions, with said first portion of said gate electrode being disposed on part of said insulating layer and positioned over the channel region, with said second portion of said gate electrode disposed on said surface of said substrate and being positioned adjacent where the drain region extends to said substrate surface, the composition of said gate electrode being such that a Schottky-barrier diode is formed by the contact of said second portion of said gate electrode and said substrate.
Claim 3
Dependent Claim
15 words
The device at claim 1 wherein said gate electrode is composed of a silicide material.
Claim 4
Dependent Claim
15 words
The device of claim 1 wherein said gate electrode is composed of a refractory metal.
Claim 5
Independent Claim
46 words
A device according to any of claims 2-3 or 1, further including a second material contacting said second region, wherein the composition of said second material is such that the interaction between said second material and said second region forms a Schottky source for said device.
Claim 6
Dependent Claim
198 words
A semiconductor device comprising a substrate of first conductivity type, a first region of conductivity type opposite said first conductivity type extending into said substrate from a surface of said substrate, a second region of first conductivity type in said first region and extending into said first region to a depth less than that which said first region extends into said substrate, a drain region adjacent to said first region and extending to said surface, a channel region along said surface between said second region and said drain region, an insulating layer disposed on said surface of said substrate over the channel region, a gate electrode composed of a first material disposed on part of said insulating layer and positioned over the channel region, and a second material having a composition different than said gate electrode and being disposed on said surface of said substrate, said second material being positioned on the surface of the substrate adjacent where the drain region extends to said substrate surface and having a portion thereof physically contacting said gate electrode, and the composition of said second material being such that a Schottyky-barrier diode is formed by said second material and said substrate.
Claim 7
Dependent Claim
198 words
A semiconductor device comprising a substrate of first conductivity type, a first region of conductivity type opposite said first conductivity type extending into said substrate from a surface of said substrate, a second region of first conductivity type in said first region and extending into said first region to a depth less than that which said first region extends into said substrate, a drain region adjacent to said first region and extending to said surface, a channel region along said surface between said second region and said drain region, an insulating layer disposed on said surface of said substrate over the channel region, a gate electrode composed of a first material disposed on part of said insulating layer and positioned over the channel region, and a second material having a composition different than said gate electrode and being disposed on said surface of said substrate, said second material being positioned on the surface of the substrate adjacent where the drain region extends to said substrate surface and having a portion thereof physically contacting said gate electrode, and the composition of said second material being such that a Schottyky-barrier diode is formed by said second material and said substrate.
Claim 8
Dependent Claim
12 words
The device of claim 5, wherein said second material is a silicide.
Claim 9
Dependent Claim
13 words
The device of claim 5, wherein said second material is a refractory metal.
Claim 10
Independent Claim
44 words
A device according to any of claims 5-7, further including a third material contacting said second region, wherein the composition of said third material is such that the interaction between said third material and said second region forms a Schottky source for said device.
Claim 11
Independent Claim
18 words
A device of any of claims 2-3 or 5-7 and 1, wherein said first conductivity type is N.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-08-27 | 1994-02-26 | 1994-08-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-08-27 | 1998-02-26 | 1998-08-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-08-27 | 2002-02-26 | 2002-08-28 | $7700.00 | Window Closed / Lapsed |